Pagina 1070 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  1.070/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF6714MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 29A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 166A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 29A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
package: DirectFET? Isometric MX
Voorraad7.472
MOSFET (Metal Oxide)
25V
29A (Ta), 166A (Tc)
4.5V, 10V
2.4V @ 100µA
44nC @ 4.5V
3890pF @ 13V
±20V
-
2.8W (Ta), 89W (Tc)
2.1 mOhm @ 29A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
hot IRLL2703PBF
Infineon Technologies

MOSFET N-CH 30V 3.9A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
package: TO-261-4, TO-261AA
Voorraad10.488
MOSFET (Metal Oxide)
30V
3.9A (Ta)
4V, 10V
2.4V @ 250µA
14nC @ 5V
530pF @ 25V
±16V
-
1W (Ta)
45 mOhm @ 3.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot IRLU3303PBF
Infineon Technologies

MOSFET N-CH 30V 35A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad266.220
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
1V @ 250µA
26nC @ 4.5V
870pF @ 25V
±16V
-
68W (Tc)
31 mOhm @ 21A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot IRFU1205
Infineon Technologies

MOSFET N-CH 55V 44A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad5.952
MOSFET (Metal Oxide)
55V
44A (Tc)
10V
4V @ 250µA
65nC @ 10V
1300pF @ 25V
±20V
-
107W (Tc)
27 mOhm @ 26A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
AOTF10T60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1346pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3F
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad4.560
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
5V @ 250µA
35nC @ 10V
1346pF @ 100V
±30V
-
43W (Tc)
700 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3F
TO-220-3 Full Pack
TPC8022-H(TE12LQ,M
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 7.5A SOP8 2-6J1B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 3.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP (5.5x6.0)
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
package: 8-SOIC (0.173", 4.40mm Width)
Voorraad7.248
MOSFET (Metal Oxide)
40V
7.5A (Ta)
4.5V, 10V
2.3V @ 1mA
11nC @ 10V
650pF @ 10V
±20V
-
1W (Ta)
27 mOhm @ 3.8A, 10V
150°C (TJ)
Surface Mount
8-SOP (5.5x6.0)
8-SOIC (0.173", 4.40mm Width)
BUK964R2-55B,118
Nexperia USA Inc.

MOSFET N-CH 55V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 10220pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad7.392
MOSFET (Metal Oxide)
55V
75A (Tc)
4.5V, 10V
2V @ 1mA
95nC @ 5V
10220pF @ 25V
±15V
-
300W (Tc)
3.7 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TN0604N3-G-P013
Microchip Technology

MOSFET N-CH 40V 700MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad3.904
MOSFET (Metal Oxide)
40V
700mA (Tj)
5V, 10V
1.6V @ 1mA
-
190pF @ 20V
±20V
-
740mW (Ta)
750 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
NX3008PBKMB,315
Nexperia USA Inc.

MOSFET P-CH 30V 300MA 3DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-DFN1006B (0.6x1)
  • Package / Case: 3-XFDFN
package: 3-XFDFN
Voorraad5.856
MOSFET (Metal Oxide)
30V
300mA (Ta)
1.8V, 4.5V
1.1V @ 250µA
0.72nC @ 4.5V
46pF @ 15V
±8V
-
360mW (Ta), 2.7W (Tc)
4.1 Ohm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
3-DFN1006B (0.6x1)
3-XFDFN
SIR610DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 200V 35.4A SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 31.9 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
package: PowerPAK? SO-8
Voorraad3.744
MOSFET (Metal Oxide)
200V
35.4A (Tc)
7.5V, 10V
4V @ 250µA
38nC @ 10V
1380pF @ 100V
±20V
-
104W (Tc)
31.9 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
STP6N90K5
STMicroelectronics

N-CHANNEL 900 V, 2.1 OHM TYP., 3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad7.536
MOSFET (Metal Oxide)
900V
6A
10V
5V @ 100µA
-
-
±30V
Current Sensing
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
RF4E110BNTR
Rohm Semiconductor

MOSFET N-CH 30V 11A 8-HUML

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-HUML2020L8 (2x2)
  • Package / Case: 8-PowerUDFN
package: 8-PowerUDFN
Voorraad3.472
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
2V @ 250µA
24nC @ 10V
1200pF @ 15V
±20V
-
2W (Ta)
11.1 mOhm @ 11A, 10V
150°C (TJ)
Surface Mount
6-HUML2020L8 (2x2)
8-PowerUDFN
AON6452
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 6.5A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
package: 8-PowerSMD, Flat Leads
Voorraad22.422
MOSFET (Metal Oxide)
100V
6.5A (Ta), 26A (Tc)
7V, 10V
4V @ 250µA
34nC @ 10V
2200pF @ 50V
±25V
-
2W (Ta), 35W (Tc)
25 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
hot IXKH70N60C5
IXYS

MOSFET N-CH 600V 70A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXKH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad14.712
MOSFET (Metal Oxide)
600V
70A (Tc)
10V
3.5V @ 3mA
190nC @ 10V
6800pF @ 100V
±20V
Super Junction
-
45 mOhm @ 44A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXKH)
TO-247-3
hot IRFB13N50APBF
Vishay Siliconix

MOSFET N-CH 500V 14A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad46.596
MOSFET (Metal Oxide)
500V
14A (Tc)
10V
4V @ 250µA
81nC @ 10V
1910pF @ 25V
±30V
-
250W (Tc)
450 mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
AOT66613L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 44.5A/120A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 8.3W (Ta), 260W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
44.5A (Ta), 120A (Tc)
8V, 10V
3.5V @ 250µA
110 nC @ 10 V
5300 pF @ 30 V
±20V
-
8.3W (Ta), 260W (Tc)
2.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
MTB3N60ET4
onsemi

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMN6041SVTQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
4.1A (Ta)
4.5V, 10V
3V @ 250µA
21 nC @ 10 V
1190 pF @ 30 V
±20V
-
900mW (Ta)
48mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
SM2317PSAC-TRG-ML
MOSLEADER

P -20V -4.6A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2SK2529-90-E
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FJ4B01120L1
Panasonic Electronic Components

MOSFET P-CH 12V 2.6A ULGA004

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 370mW (Ta)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 2A, 4.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ULGA004-W-1010-RA01
  • Package / Case: 4-XFLGA, CSP
package: -
Request a Quote
MOSFET (Metal Oxide)
12 V
2.6A (Ta)
1.5V, 4.5V
1V @ 2mA
10.7 nC @ 4.5 V
814 pF @ 10 V
±8V
-
370mW (Ta)
51mOhm @ 2A, 4.5V
-40°C ~ 85°C (TA)
Surface Mount
ULGA004-W-1010-RA01
4-XFLGA, CSP
NTMTS0D7N04CLTXG
onsemi

MOSFET N-CH 40V 67A/433A 8DFNW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.9W (Ta), 205W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFNW (8.3x8.4)
  • Package / Case: 8-PowerTDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
40 V
67A (Ta), 433A (Tc)
4.5V, 10V
2.5V @ 250µA
205 nC @ 10 V
12238 pF @ 25 V
±20V
-
4.9W (Ta), 205W (Tc)
0.63mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-DFNW (8.3x8.4)
8-PowerTDFN
AIMZH120R160M1TXKSA1
Infineon Technologies

SIC_DISCRETE

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
  • Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
  • Vgs (Max): +23V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 109W (Tc)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-11
  • Package / Case: TO-247-4
package: -
Voorraad150
SiC (Silicon Carbide Junction Transistor)
1200 V
17A (Tc)
18V, 20V
5.1V @ 1.5mA
14 nC @ 20 V
350 pF @ 800 V
+23V, -5V
-
109W (Tc)
200mOhm @ 5A, 20V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-11
TO-247-4
UF3C065080K3S
Qorvo

MOSFET N-CH 650V 31A TO247-3

  • FET Type: N-Channel
  • Technology: -
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
package: -
Voorraad36.543
-
650 V
31A (Tc)
12V
6V @ 10mA
51 nC @ 15 V
1500 pF @ 100 V
±25V
-
190W (Tc)
100mOhm @ 20A, 12V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
2SJ599-0-Z-E1-AZ
Renesas Electronics Corporation

TRANSISTOR

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
20A (Tc)
-
-
-
-
-
-
-
-
-
-
-
-
IPD50R280CEBTMA1
Infineon Technologies

MOSFET N-CH 500V 13A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 92W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Request a Quote
MOSFET (Metal Oxide)
500 V
13A (Tc)
13V
3.5V @ 350µA
32.6 nC @ 10 V
773 pF @ 100 V
±20V
-
92W (Tc)
280mOhm @ 4.2A, 13V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
MRH15N19U3SR
Microchip Technology

RH MOSFET 150V U3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 88mOhm @ 12A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U3 (SMD-0.5)
  • Package / Case: 3-SMD, No Lead
package: -
Request a Quote
MOSFET (Metal Oxide)
150 V
19A (Tc)
12V
4V @ 1mA
50 nC @ 12 V
2140 pF @ 25 V
±20V
-
75W (Tc)
88mOhm @ 12A, 12V
-55°C ~ 150°C (TJ)
Surface Mount
U3 (SMD-0.5)
3-SMD, No Lead
LSIC1MO120E0080
Littelfuse Inc.

SICFET N-CH 1200V 39A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 800 V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
package: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
39A (Tc)
20V
4V @ 10mA
95 nC @ 20 V
1825 pF @ 800 V
+22V, -6V
-
179W (Tc)
100mOhm @ 20A, 20V
-55°C ~ 150°C
Through Hole
TO-247AD
TO-247-3