Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 85V 53A TO-220
|
package: TO-220-3 |
Voorraad3.616 |
|
MOSFET (Metal Oxide) | 85V | 53A (Tc) | 10V | 4V @ 61µA | 48nC @ 10V | 3230pF @ 40V | ±20V | - | 100W (Tc) | 16.5 mOhm @ 53A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 19A 8SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad549.072 |
|
MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 35nC @ 10V | 2200pF @ 15V | ±20V | - | 3.1W (Ta) | 5.3 mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH TO263-3
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad5.904 |
|
MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 4.5V @ 700µA | 68nC @ 10V | 1850pF @ 100V | ±20V | - | 151W (Tc) | 190 mOhm @ 7.3A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N CH 75V 62A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad4.192 |
|
MOSFET (Metal Oxide) | 75V | 62A (Tc) | 10V | 4V @ 250µA | 130nC @ 10V | 3270pF @ 25V | ±20V | - | 120W (Tc) | 12.6 mOhm @ 48A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 30V 6.3A UDFN6
|
package: 6-UDFN Exposed Pad |
Voorraad18.744 |
|
MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 8.7nC @ 10V | 476pF @ 15V | ±20V | - | 650mW (Ta) | 28.5 mOhm @ 6.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
||
Diodes Incorporated |
MOSFET P-CH 20V 7.6A
|
package: 6-UDFN Exposed Pad |
Voorraad5.904 |
|
MOSFET (Metal Oxide) | 20V | 7.6A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 27nC @ 4.5V | 1837pF @ 15V | ±8V | - | 730mW (Ta) | 27 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
STMicroelectronics |
MOSFET N-CH 60V 180A H2PAK-6
|
package: TO-263-7, D2Pak (6 Leads + Tab) |
Voorraad4.288 |
|
MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 11000pF @ 25V | ±20V | - | 333W (Tc) | 1.5 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D2Pak (6 Leads + Tab) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 24A TO-220
|
package: TO-220-3 |
Voorraad23.148 |
|
MOSFET (Metal Oxide) | 80V | 24A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 750pF @ 25V | ±25V | - | 75W (Tc) | 60 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 6.5A TO220-3
|
package: TO-220-3 |
Voorraad9.276 |
|
MOSFET (Metal Oxide) | 800V | 6.5A (Ta) | 10V | 4V @ 280µA | 13nC @ 10V | 700pF @ 300V | ±20V | - | 110W (Tc) | 950 mOhm @ 3.3A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 240A PSOF8
|
package: 8-PowerSFN |
Voorraad4.384 |
|
MOSFET (Metal Oxide) | 80V | 240A (Tc) | 10V | 4V @ 250µA | 169nC @ 10V | 10000pF @ 40V | ±20V | - | 357W (Tj) | 2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PSOF | 8-PowerSFN |
||
Vishay Siliconix |
MOSFET N-CH 250V 3.8A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad17.760 |
|
MOSFET (Metal Oxide) | 250V | 3.8A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 1.1 Ohm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
N-CHANNEL 80 V (D-S) MOSFET POWE
|
package: - |
Voorraad11.622 |
|
MOSFET (Metal Oxide) | 80 V | 33.6A (Ta), 137.5A (Tc) | 7.5V, 10V | 4V @ 250µA | 60 nC @ 10 V | 3020 pF @ 40 V | ±20V | - | 6.25W (Ta), 104W (Tc) | 2.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Vishay Siliconix |
N-CHANNEL 600V
|
package: - |
Voorraad2.982 |
|
MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 4V @ 250µA | 95 nC @ 10 V | 2418 pF @ 100 V | ±30V | - | 227W (Tc) | 158mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET_)40V 60V) PG-TSDSON-8
|
package: - |
Voorraad14.040 |
|
MOSFET (Metal Oxide) | 60 V | 90A (Tj) | 4.5V, 10V | 2.2V @ 29µA | 36.7 nC @ 10 V | 2500 pF @ 30 V | ±16V | - | 71W (Tc) | 5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-33 | 8-PowerTDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -45A, -30V
|
package: - |
Voorraad35.685 |
|
MOSFET (Metal Oxide) | 30 V | 45A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 50 nC @ 10 V | 3000 pF @ 15 V | ±20V | - | 46W (Tc) | 10mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PPAK (3.05x3.08) | 8-PowerVDFN |
||
EPC |
TRANS GAN 80V .0032OHM AECQ101
|
package: - |
Voorraad74.940 |
|
GaNFET (Gallium Nitride) | 80 V | 60A (Ta) | 5V | 2.5V @ 7mA | 13.6 nC @ 5 V | 1570 pF @ 50 V | +6V, -4V | - | - | 3.2mOhm @ 25A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
onsemi |
TRANS MOSFET N-CH 50V 0.2A
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
TRENCH >=100V
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 44A (Tc) | 10V | 4.6V @ 46µA | 18.3 nC @ 10 V | 1400 pF @ 75 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 22mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TTFN-9-3 | 9-PowerTDFN |
||
onsemi |
MOSFET N-CH 80V 65A POWER56
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 65A (Tc) | 10V | 4V @ 250µA | 46 nC @ 10 V | 2470 pF @ 40 V | ±20V | - | 107W (Tc) | 7.5mOhm @ 65A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET_(20V 40V)
|
package: - |
Voorraad3.000 |
|
MOSFET (Metal Oxide) | 40 V | - | 10V | - | 124 nC @ 10 V | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-TDSON-8-43 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V SOT323 T&R
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 391mA (Ta) | 1.8V, 5V | 1V @ 250µA | 0.8 nC @ 4.5 V | 41 pF @ 30 V | ±20V | - | 400mW (Ta) | 2Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Comchip Technology |
MOSFET N-CH 60V 0.115A SOT323
|
package: - |
Voorraad5.883 |
|
MOSFET (Metal Oxide) | 60 V | 115mA (Ta) | 5V, 10V | 2.5V @ 250µA | - | 50 pF @ 25 V | ±20V | - | 200mW (Ta) | 5Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
onsemi |
TRENCH 30V NCH
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 20.6A (Ta), 71A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 11.6 nC @ 4.5 V | 1683 pF @ 15 V | ±20V | - | 3W (Ta), 36.5W (Tc) | 3.4mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
MOSLEADER |
Single N 30V 4.6A SOT23
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diotec Semiconductor |
IC
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 110A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14 nC @ 4.5 V | 1860 pF @ 15 V | ±20V | - | 35W (Tc) | 2.65mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN (5x6) | 8-PowerTDFN |
||
Nexperia USA Inc. |
PSMN2R8-40YSD/SOT669/LFPAK
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 160A (Ta) | 10V | 3.6V @ 1mA | 62 nC @ 10 V | 4507 pF @ 20 V | ±20V | Schottky Diode (Body) | 147W (Ta) | 2.8mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Vishay Siliconix |
N-CHANNEL 600V
|
package: - |
Voorraad2.934 |
|
MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 4V @ 250µA | 64 nC @ 10 V | 1205 pF @ 100 V | ±30V | - | 147W (Tc) | 309mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |