Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad6.704 |
|
MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4V @ 58µA | 82nC @ 10V | 6600pF @ 30V | ±20V | - | 115W (Tc) | 5.3 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad16.788 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 2840pF @ 25V | ±20V | - | 140W (Tc) | 7.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 12A DIRECTFET-S1
|
package: DirectFET? Isometric S1 |
Voorraad5.408 |
|
MOSFET (Metal Oxide) | 25V | 12A (Ta), 39A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1010pF @ 13V | ±20V | - | 1.8W (Ta), 21W (Tc) | 7.8 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET? Isometric S1 |
||
Infineon Technologies |
MOSFET N-CH 55V 26A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad7.888 |
|
MOSFET (Metal Oxide) | 55V | 26A (Tc) | 4.5V, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | ±20V | - | 79W (Tc) | 50 mOhm @ 4.7A, 10V | -40°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 80A TO-220
|
package: TO-220-3 |
Voorraad390.000 |
|
MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 4V @ 180µA | 118nC @ 10V | 4100pF @ 30V | ±20V | - | 250W (Tc) | 7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 25A DFN
|
package: 8-VDFN Exposed Pad |
Voorraad2.768 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFN (5x6) | 8-VDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V 8.2A SO8FL
|
package: 8-PowerTDFN |
Voorraad3.456 |
|
MOSFET (Metal Oxide) | 30V | 8.2A (Ta), 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 18.6nC @ 10V | 987pF @ 15V | ±20V | - | 750mW (Ta) | 6.95 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 55V 150A I4-PAC-5
|
package: i4-Pac?-5 |
Voorraad3.264 |
|
MOSFET (Metal Oxide) | 55V | 150A (Tc) | 10V | 4V @ 1mA | 86nC @ 10V | - | ±20V | - | - | 4.9 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS i4-PAC? | i4-Pac?-5 |
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Vishay Siliconix |
MOSFET N-CH 250V 3.8A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad3.296 |
|
MOSFET (Metal Oxide) | 250V | 3.8A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 1.1 Ohm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-220AB
|
package: TO-220-3 |
Voorraad390.000 |
|
MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 2V @ 250µA | 35nC @ 5V | 1600pF @ 25V | ±10V | - | 88W (Tc) | 50 mOhm @ 18A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 83A TO220
|
package: TO-220-3 |
Voorraad6.576 |
|
MOSFET (Metal Oxide) | 75V | 76A (Tc) | 6V, 10V | 3.7V @ 100µA | 109nC @ 10V | 4020pF @ 25V | ±20V | - | 125W (Tc) | 8.4 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 3.2A PPAK SO-8
|
package: PowerPAK? SO-8 |
Voorraad83.580 |
|
MOSFET (Metal Oxide) | 200V | 3.2A (Ta) | 6V, 10V | 4.5V @ 250µA | 42nC @ 10V | - | ±20V | - | 1.9W (Ta) | 80 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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STMicroelectronics |
MOSFET N CH 550V 33A TO-247
|
package: TO-247-3 |
Voorraad5.504 |
|
MOSFET (Metal Oxide) | 550V | 33A (Tc) | 10V | 5V @ 250µA | 62nC @ 10V | 2950pF @ 100V | ±25V | - | 190W (Tc) | 80 mOhm @ 16.5A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Nexperia USA Inc. |
PMPB55ENEA/SOT1220/REEL 7" Q1/
|
package: 6-UDFN Exposed Pad |
Voorraad3.920 |
|
MOSFET (Metal Oxide) | 60V | 4A (Ta) | 4.5V, 10V | 2.7V @ 250µA | 12nC @ 10V | 435pF @ 30V | ±20V | - | 1.65W (Ta) | 56 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN2020MD (2x2) | 6-UDFN Exposed Pad |
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Fairchild/ON Semiconductor |
MOSFET P-CH 40V 10.8A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad6.208 |
|
MOSFET (Metal Oxide) | 40V | 10.8A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 50nC @ 10V | 2775pF @ 20V | ±20V | - | 2.4W (Ta), 69W (Tc) | 12.3 mOhm @ 12.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 40V 230A TO263AA
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 230A (Tc) | 10V | 4V @ 250µA | 140 nC @ 10 V | 7400 pF @ 25 V | ±15V | - | 340W (Tc) | 2.9mOhm @ 115A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
MOSFET
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 4V @ 250µA | 107 nC @ 10 V | 7735 pF @ 25 V | ±20V | - | 300W (Tj) | 1.2mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
||
Nexperia USA Inc. |
MOSFET N-CH 20V 1.2A DFN0606-3
|
package: - |
Voorraad57.834 |
|
MOSFET (Metal Oxide) | 20 V | 1.2A (Ta) | 1.5V, 4.5V | 950mV @ 250µA | 0.95 nC @ 4.5 V | 41 pF @ 10 V | ±8V | - | 360mW (Ta), 2.23W (Tc) | 310mOhm @ 700mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN0606-3 | 3-XFDFN |
||
Vishay Siliconix |
MOSFET P-CH 40V 100A TO252AA
|
package: - |
Voorraad9.414 |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 280 nC @ 10 V | 14500 pF @ 25 V | ±20V | - | 107W (Tc) | 5.1mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V POWERDI506
|
package: - |
Voorraad11.316 |
|
MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 13.7 nC @ 10 V | 3505 pF @ 30 V | ±20V | - | 2.6W (Ta), 113W (Tc) | 18mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -40A, -30V
|
package: - |
Voorraad15.114 |
|
MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 25 nC @ 10 V | 1650 pF @ 15 V | ±20V | - | 53W (Tc) | 17.8mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PPAK (5.1x5.71) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Qorvo |
SICFET N-CH 650V 27A D2PAK-7
|
package: - |
Voorraad8.883 |
|
SiCFET (Cascode SiCJFET) | 650 V | 27A (Tc) | - | 6V @ 10mA | 23 nC @ 12 V | 760 pF @ 100 V | ±25V | - | 136.4W (Tc) | 105mOhm @ 20A, 12V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 4V @ 250µA | 120 nC @ 10 V | 2000 pF @ 25 V | ±20V | - | 180W (Tc) | 85mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Fairchild Semiconductor |
P-CHANNEL POWER MOSFET
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 6A (Tc) | 10V | 4V @ 250µA | 20 nC @ 10 V | 550 pF @ 25 V | ±30V | - | 49W (Tc) | 600mOhm @ 3A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Micro Commercial Co |
MOSFET N-CH DFN5060
|
package: - |
Voorraad15.000 |
|
MOSFET (Metal Oxide) | 65 V | 95A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 93 nC @ 10 V | 5950 pF @ 25 V | ±20V | - | 120W (Tj) | 2.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
||
Infineon Technologies |
SILICON CARBIDE MOSFET
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
MOSFET N-CH 45V 4A TSMT6
|
package: - |
Voorraad53.592 |
|
MOSFET (Metal Oxide) | 45 V | 4A (Ta) | 4V, 10V | 2.5V @ 1mA | 8.8 nC @ 5 V | 530 pF @ 10 V | ±21V | - | 950mW (Ta) | 53mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |