Pagina 1024 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  1.024/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SPD08P06PGBTMA1
Infineon Technologies

MOSFET P-CH 60V 8.83A 3TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6.2V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 6.2V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad21.036
MOSFET (Metal Oxide)
60V
8.83A (Ta)
6.2V
4V @ 250µA
13nC @ 10V
420pF @ 25V
±20V
-
42W (Tc)
300 mOhm @ 10A, 6.2V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPB80N06S3L-06
Infineon Technologies

MOSFET N-CH 55V 80A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9417pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 56A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad7.056
MOSFET (Metal Oxide)
55V
80A (Tc)
5V, 10V
2.2V @ 80µA
196nC @ 10V
9417pF @ 25V
±16V
-
136W (Tc)
5.6 mOhm @ 56A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRL3715ZPBF
Infineon Technologies

MOSFET N-CH 20V 50A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad171.840
MOSFET (Metal Oxide)
20V
50A (Tc)
4.5V, 10V
2.55V @ 250µA
11nC @ 4.5V
870pF @ 10V
±20V
-
45W (Tc)
11 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IXFC24N50Q
IXYS

MOSFET N-CH ISOPLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS220?
  • Package / Case: ISOPLUS220?
package: ISOPLUS220?
Voorraad3.600
MOSFET (Metal Oxide)
500V
21A (Tc)
10V
4V @ 4mA
135nC @ 10V
4200pF @ 25V
±20V
-
230W (Tc)
230 mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS220?
ISOPLUS220?
SIE836DF-T1-E3
Vishay Siliconix

MOSFET N-CH 200V 18.3A POLARPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 10-PolarPAK? (SH)
  • Package / Case: 10-PolarPAK? (SH)
package: 10-PolarPAK? (SH)
Voorraad6.800
MOSFET (Metal Oxide)
200V
18.3A (Tc)
10V
4.5V @ 250µA
41nC @ 10V
1200pF @ 100V
±30V
-
5.2W (Ta), 104W (Tc)
130 mOhm @ 4.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
10-PolarPAK? (SH)
10-PolarPAK? (SH)
hot IRL520
Vishay Siliconix

MOSFET N-CH 100V 9.2A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad438.000
MOSFET (Metal Oxide)
100V
9.2A (Tc)
4V, 5V
2V @ 250µA
12nC @ 5V
490pF @ 25V
±10V
-
60W (Tc)
270 mOhm @ 5.5A, 5V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRF737LC
Vishay Siliconix

MOSFET N-CH 300V 6.1A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad222.300
MOSFET (Metal Oxide)
300V
6.1A (Tc)
10V
4V @ 250µA
17nC @ 10V
430pF @ 25V
±30V
-
74W (Tc)
750 mOhm @ 3.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IXTP2N60P
IXYS

MOSFET N-CH 600V 2A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad60.000
MOSFET (Metal Oxide)
600V
2A (Tc)
10V
5V @ 250µA
7nC @ 10V
240pF @ 25V
±30V
-
55W (Tc)
5.1 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
NVMFS4C03NWFT3G
ON Semiconductor

MOSFET N-CH 30V 31.4A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 31.4A (Ta), 143A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3071pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.71W (Ta), 77W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad4.320
MOSFET (Metal Oxide)
30V
31.4A (Ta), 143A (Tc)
4.5V, 10V
2.2V @ 250µA
45.2nC @ 10V
3071pF @ 15V
±20V
-
3.71W (Ta), 77W (Tc)
2.1 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
NTMFS4C35NT3G
ON Semiconductor

MOSFET N-CH 30V 80A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 780mW (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad3.536
MOSFET (Metal Oxide)
30V
12.4A (Ta)
4.5V, 10V
2.2V @ 250µA
15nC @ 4.5V
2300pF @ 15V
±20V
-
780mW (Ta), 33W (Tc)
3.2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
NTNS3A67PZT5G
ON Semiconductor

MOSFET P-CH 20V SOT883

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
  • Package / Case: SC-101, SOT-883
package: SC-101, SOT-883
Voorraad4.784
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
SOT-883 (XDFN3) (1x0.6)
SC-101, SOT-883
hot AON7408
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 10A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (3x3)
  • Package / Case: 8-PowerSMD, Flat Leads
package: 8-PowerSMD, Flat Leads
Voorraad645.636
MOSFET (Metal Oxide)
30V
10A (Ta), 18A (Tc)
4.5V, 10V
2.6V @ 250µA
8.6nC @ 4.5V
448pF @ 15V
±20V
-
3.1W (Ta), 11W (Tc)
20 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (3x3)
8-PowerSMD, Flat Leads
PMPB23XNEZ
Nexperia USA Inc.

PMPB23XNE/SOT1220/REEL 7" Q1/T

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN2020MD (2x2)
  • Package / Case: 6-UDFN Exposed Pad
package: 6-UDFN Exposed Pad
Voorraad5.856
MOSFET (Metal Oxide)
20V
7A (Ta)
1.8V, 4.5V
900mV @ 250µA
17nC @ 10V
1136pF @ 10V
±12V
-
1.7W (Ta)
22 mOhm @ 7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-DFN2020MD (2x2)
6-UDFN Exposed Pad
PSMN5R6-100PS,127
Nexperia USA Inc.

MOSFET N-CH 100V 100A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8061pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 306W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad7.360
MOSFET (Metal Oxide)
100V
100A (Tc)
10V
4V @ 1mA
141nC @ 10V
8061pF @ 50V
±20V
-
306W (Tc)
5.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IXFN55N50F
IXYS

MOSFET N-CH 500V 55A SOT227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 27.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
package: SOT-227-4, miniBLOC
Voorraad7.648
MOSFET (Metal Oxide)
500V
55A (Tc)
10V
5.5V @ 8mA
195nC @ 10V
6700pF @ 25V
±20V
-
600W (Tc)
85 mOhm @ 27.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
hot STU6NF10
STMicroelectronics

MOSFET N-CH 100V 6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 3A, 10V
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad96.000
MOSFET (Metal Oxide)
100V
6A (Tc)
10V
4V @ 250µA
14nC @ 10V
280pF @ 25V
±20V
-
30W (Tc)
250 mOhm @ 3A, 10V
-65°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot SI7430DP-T1-E3
Vishay Siliconix

MOSFET N-CH 150V 26A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
package: PowerPAK? SO-8
Voorraad85.296
MOSFET (Metal Oxide)
150V
26A (Tc)
8V, 10V
4.5V @ 250µA
43nC @ 10V
1735pF @ 50V
±20V
-
5.2W (Ta), 64W (Tc)
45 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot IRFIBC40GPBF
Vishay Siliconix

MOSFET N-CH 600V 3.5A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
package: TO-220-3 Full Pack, Isolated Tab
Voorraad16.704
MOSFET (Metal Oxide)
600V
3.5A (Tc)
10V
4V @ 250µA
60nC @ 10V
1300pF @ 25V
±20V
-
40W (Tc)
1.2 Ohm @ 2.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
DMP2038USS-13
Diodes Incorporated

MOSFET P-CH 20V 6.5A 8-SO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1496pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad22.350
MOSFET (Metal Oxide)
20V
6.5A (Ta)
2.5V, 4.5V
1.1V @ 250µA
14.4nC @ 4.5V
1496pF @ 15V
±8V
-
2.5W (Ta)
38 mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SIHP11N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 8A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: -
Request a Quote
MOSFET (Metal Oxide)
800 V
8A (Tc)
10V
4V @ 250µA
42 nC @ 10 V
804 pF @ 100 V
±30V
-
78W (Tc)
450mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFH8330TR2PBF
Infineon Technologies

MOSFET N-CH 30V 14A 5X6 PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerTDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
17A (Ta), 56A (Tc)
-
2.35V @ 25µA
20 nC @ 10 V
1450 pF @ 25 V
-
-
-
6.6mOhm @ 20A, 10V
-
Surface Mount
PQFN (5x6)
8-PowerTDFN
G500P03IE
Goford Semiconductor

MOSFET P-CH ESD 30V 4.6A SOT-23

  • FET Type: -
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: -
package: -
Voorraad9.000
MOSFET (Metal Oxide)
-
4.6A (Tc)
2.5V, 4.5V, 10V
1.3V @ 250µA
13 nC @ 10 V
680 pF @ 15 V
±12V
-
-
55mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
-
SCT3022KLHRC11
Rohm Semiconductor

SICFET N-CH 1200V 95A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 427W
  • Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
package: -
Voorraad4.020
SiCFET (Silicon Carbide)
1200 V
95A (Tc)
18V
5.6V @ 18.2mA
178 nC @ 18 V
2879 pF @ 800 V
+22V, -4V
-
427W
28.6mOhm @ 36A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
SIHG22N60AEL-GE3
Vishay Siliconix

MOSFET N-CH 600V 21A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
package: -
Voorraad141
MOSFET (Metal Oxide)
600 V
21A (Tc)
10V
4V @ 250µA
82 nC @ 10 V
1757 pF @ 100 V
±30V
-
208W (Tc)
180mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SI1442DH-T1-BE3
Vishay Siliconix

MOSFET N-CH 12V 4A SC70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
package: -
Request a Quote
MOSFET (Metal Oxide)
12 V
4A (Ta)
-
1V @ 250µA
33 nC @ 8 V
1010 pF @ 6 V
±8V
-
1.56W (Ta)
20mOhm @ 6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
BUK6Y61-60PX
Nexperia USA Inc.

MOSFET P-CH 60V 25A LFPAK56

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Ta)
  • Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
package: -
Voorraad12.582
MOSFET (Metal Oxide)
60 V
25A (Ta)
4.5V, 10V
3V @ 250µA
30 nC @ 10 V
1060 pF @ 30 V
±20V
-
66W (Ta)
61mOhm @ 4.7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
DMP3036SFV-13
Diodes Incorporated

MOSFET P-CH 30V 30A POWERDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerVDFN
package: -
Voorraad8.871
MOSFET (Metal Oxide)
30 V
30A (Ta)
5V, 10V
2.5V @ 250µA
16.5 nC @ 10 V
1931 pF @ 15 V
±25V
-
2.3W (Ta)
20mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerVDFN
DMTH43M8LFGQ-7
Diodes Incorporated

MOSFET N-CH 40V PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
package: -
Voorraad5.343
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
5V, 10V
2.5V @ 250µA
40.1 nC @ 10 V
2798 pF @ 20 V
±20V
-
2.62W (Ta), 65.2W (Tc)
3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN