Pagina 1020 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
Contacteer ons
SalesDept@heisener.com +86-755-83210559 ext. 813
Aanmelden/Registreren
Language Translation

* Please refer to the English Version as our Official Version.

BOM
kar 0

Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  1.020/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPI80N06S407AKSA1
Infineon Technologies

MOSFET N-CH 60V 80A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
package: TO-262-3 Long Leads, I2Pak, TO-262AA
Voorraad4.944
MOSFET (Metal Oxide)
60V
80A (Tc)
10V
4V @ 40µA
56nC @ 10V
4500pF @ 25V
±20V
-
79W (Tc)
7.4 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
IRLR3717TRLPBF
Infineon Technologies

MOSFET N-CH 20V 120A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad3.504
MOSFET (Metal Oxide)
20V
120A (Tc)
4.5V, 10V
2.45V @ 250µA
31nC @ 4.5V
2830pF @ 10V
±20V
-
89W (Tc)
4 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5305TRL
Infineon Technologies

MOSFET P-CH 55V 31A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad5.888
MOSFET (Metal Oxide)
55V
31A (Tc)
10V
4V @ 250µA
63nC @ 10V
1200pF @ 25V
±20V
-
110W (Tc)
65 mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI4409DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 150V 1.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 332pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad102.000
MOSFET (Metal Oxide)
150V
1.3A (Tc)
6V, 10V
4V @ 250µA
12nC @ 10V
332pF @ 50V
±20V
-
2.2W (Ta), 4.6W (Tc)
1.2 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDS8874
Fairchild/ON Semiconductor

MOSFET N-CH 30V 16A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad224.712
MOSFET (Metal Oxide)
30V
16A (Ta)
4.5V, 10V
2.5V @ 250µA
72nC @ 10V
3990pF @ 15V
±20V
-
2.5W (Ta)
5.5 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
PHP71NQ03LT,127
NXP

MOSFET N-CH 30V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad7.024
MOSFET (Metal Oxide)
30V
75A (Tc)
5V, 10V
2.5V @ 1mA
13.2nC @ 5V
1220pF @ 25V
±20V
-
120W (Tc)
10 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot HUFA75344S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 285W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad7.712
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 250µA
210nC @ 20V
3200pF @ 25V
±20V
-
285W (Tc)
8 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP60R280P7XKSA1
Infineon Technologies

LOW POWER_NEW

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Voorraad6.896
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot TPS1100PW
Texas Instruments

MOSFET P-CH 15V 1.27A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 15V
  • Current - Continuous Drain (Id) @ 25°C: 1.27A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +2V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 504mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad9.612
MOSFET (Metal Oxide)
15V
1.27A (Ta)
2.7V, 10V
1.5V @ 250µA
5.45nC @ 10V
-
+2V, -15V
-
504mW (Ta)
180 mOhm @ 1.5A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
DKI06186
Sanken

MOSFET N-CH 60V 31A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 15.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad6.976
MOSFET (Metal Oxide)
60V
31A (Tc)
4.5V, 10V
2.5V @ 350µA
23.7nC @ 10V
1510pF @ 25V
±20V
-
37W (Tc)
15 mOhm @ 15.5A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3747-1E
ON Semiconductor

MOSFET N-CH 1500V 2A TO-3PF-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
  • Vgs (Max): ±35V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF-3
  • Package / Case: SC-94
package: SC-94
Voorraad3.824
MOSFET (Metal Oxide)
1500V
2A (Ta)
10V
-
37.5nC @ 10V
380pF @ 30V
±35V
-
3W (Ta), 50W (Tc)
13 Ohm @ 1A, 10V
150°C (TJ)
Through Hole
TO-3PF-3
SC-94
IXTA4N150HV
IXYS

MOSFET N-CH 1.5KV 4A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1576pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 280W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad4.240
MOSFET (Metal Oxide)
1500V
4A (Tc)
10V
5V @ 250µA
44.5nC @ 10V
1576pF @ 25V
±30V
-
280W (Tc)
6 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot ZXMN10A09KTC
Diodes Incorporated

MOSFET N-CH 100V 5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1313pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.15W (Ta)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad365.160
MOSFET (Metal Oxide)
100V
5A (Ta)
6V, 10V
4V @ 250µA
26nC @ 10V
1313pF @ 50V
±20V
-
2.15W (Ta)
85 mOhm @ 4.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI4403CDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 13.4A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad426.816
MOSFET (Metal Oxide)
20V
13.4A (Tc)
1.8V, 4.5V
1V @ 250µA
90nC @ 8V
2380pF @ 10V
±8V
-
2.5W (Ta), 5W (Tc)
15.5 mOhm @ 9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRF640PBF
Vishay Siliconix

MOSFET N-CH 200V 18A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad98.748
MOSFET (Metal Oxide)
200V
18A (Tc)
10V
4V @ 250µA
70nC @ 10V
1300pF @ 25V
±20V
-
125W (Tc)
180 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot DMN2004K-7
Diodes Incorporated

MOSFET N-CH 20V 0.63A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad1.087.752
MOSFET (Metal Oxide)
20V
630mA (Ta)
1.8V, 4.5V
1V @ 250µA
-
150pF @ 16V
±8V
-
350mW (Ta)
550 mOhm @ 540mA, 4.5V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH6016LFDFWQ-7R
Diodes Incorporated

MOSFET N-CH 60V 9.4A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.06W (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
  • Package / Case: 6-UDFN Exposed Pad
package: -
Voorraad12.906
MOSFET (Metal Oxide)
60 V
9.4A (Ta)
4.5V, 10V
3V @ 250µA
15.3 nC @ 10 V
925 pF @ 30 V
±20V
-
1.06W (Ta)
18mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
U-DFN2020-6 (SWP) (Type F)
6-UDFN Exposed Pad
DMP1070U-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 1

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 890mW (Ta)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
Request a Quote
MOSFET (Metal Oxide)
12 V
5.4A (Ta)
1.8V, 4.5V
1V @ 250µA
11.5 nC @ 4.5 V
143 pF @ 10 V
±8V
-
890mW (Ta)
31mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SQJ476EP-T1_BE3
Vishay Siliconix

N-CHANNEL 100-V (D-S) 175C MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
package: -
Voorraad8.436
MOSFET (Metal Oxide)
100 V
23A (Tc)
4.5V, 10V
2.5V @ 250µA
20 nC @ 10 V
700 pF @ 25 V
±20V
-
45W (Tc)
38mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IXFP16N85XM
IXYS

IXFP16N85XM

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2SJ176-E
Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIHH125N60EF-T1GE3
Vishay Siliconix

MOSFET N-CH 600V 23A PPAK 8 X 8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: 8-PowerTDFN
package: -
Voorraad9.000
MOSFET (Metal Oxide)
600 V
23A (Tc)
10V
5V @ 250µA
47 nC @ 10 V
1533 pF @ 100 V
±30V
-
156W (Tc)
125mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 8 x 8
8-PowerTDFN
IRF323
International Rectifier

N-CHANNEL HERMETIC MOS HEXFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 50W
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-204AA (TO-3)
  • Package / Case: TO-204AA, TO-3
package: -
Request a Quote
MOSFET (Metal Oxide)
350 V
2.8A
-
-
-
-
-
-
50W
-
-
Through Hole
TO-204AA (TO-3)
TO-204AA, TO-3
SIJ4819DP-T1-GE3
Vishay Siliconix

P-CHANNEL 80-V (D-S) MOSFET POWE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 44.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 20.7mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
package: -
Voorraad30
MOSFET (Metal Oxide)
80 V
11.5A (Ta), 44.4A (Tc)
4.5V, 10V
2.6V @ 250µA
65 nC @ 10 V
3420 pF @ 40 V
±20V
-
5W (Ta), 73.5W (Tc)
20.7mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IQD016N08NM5ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 159µA
  • Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSON-8-U04
  • Package / Case: 8-PowerTDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
80 V
31A (Ta), 323A (Tc)
6V, 10V
3.8V @ 159µA
133 nC @ 10 V
9200 pF @ 40 V
±20V
-
3W (Ta), 333W (Tc)
1.57mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSON-8-U04
8-PowerTDFN
2SK2090-0-T1-A
Renesas Electronics Corporation

SMALL SIGNAL N-CHANNEL MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPD95R750P7ATMA1
Infineon Technologies

MOSFET N-CH 950V 9A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 220µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad6.060
MOSFET (Metal Oxide)
950 V
9A (Tc)
10V
3.5V @ 220µA
23 nC @ 10 V
712 pF @ 400 V
±20V
-
73W (Tc)
750mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
XR46000ESE
MaxLinear, Inc.

MOSFET N-CH 600V 1.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-4, TO-261AA
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
1.5A (Tc)
10V
4V @ 250µA
7.5 nC @ 10 V
170 pF @ 25 V
±30V
-
20W (Tc)
8Ohm @ 750mA, 10V
150°C (TJ)
Surface Mount
SOT-223-3
TO-261-4, TO-261AA