Pagina 10 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten

IPB50CN10NGATMA1

Infineon Technologies

MOSFET N-CH 100V 20A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voorraad5.072

MOSFET (Metal Oxide)

100V

20A (Tc)

10V

4V @ 20µA

16nC @ 10V

1090pF @ 50V

±20V

-

44W (Tc)

50 mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRL3714STRR

Infineon Technologies

MOSFET N-CH 20V 36A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voorraad14.664

MOSFET (Metal Oxide)

20V

36A (Tc)

4.5V, 10V

3V @ 250µA

9.7nC @ 4.5V

670pF @ 10V

±20V

-

47W (Tc)

20 mOhm @ 18A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NTD70N03R-1G

ON Semiconductor

MOSFET N-CH 25V 10A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

package: TO-251-3 Short Leads, IPak, TO-251AA

Voorraad347.220

MOSFET (Metal Oxide)

25V

10A (Ta), 32A (Tc)

4.5V, 10V

2V @ 250µA

13.2nC @ 5V

1333pF @ 20V

±20V

-

1.36W (Ta), 62.5W (Tc)

8 mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

FDS7064SN3

Fairchild/ON Semiconductor

MOSFET N-CH 30V 16A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 15V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: 8-SOIC (0.154", 3.90mm Width)

Voorraad79.044

MOSFET (Metal Oxide)

30V

16A (Ta)

4.5V, 10V

3V @ 1mA

35nC @ 5V

2800pF @ 15V

±16V

-

3.13W (Ta)

8 mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

NDS9405

Fairchild/ON Semiconductor

MOSFET P-CH 20V 4.3A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: 8-SOIC (0.154", 3.90mm Width)

Voorraad21.228

MOSFET (Metal Oxide)

20V

4.3A (Ta)

4.5V, 10V

3V @ 250µA

40nC @ 10V

1425pF @ 10V

±20V

-

2.5W (Ta)

100 mOhm @ 2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

AUIRLU2905

Infineon Technologies

MOSFET N-CH 55V 42A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

package: TO-251-3 Short Leads, IPak, TO-251AA

Voorraad2.512

MOSFET (Metal Oxide)

55V

42A (Tc)

4V, 10V

2V @ 250µA

48nC @ 5V

1700pF @ 25V

±16V

-

110W (Tc)

27 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

AOT292L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 105A TO220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6775pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

package: TO-220-3

Voorraad3.152

MOSFET (Metal Oxide)

100V

14.5A (Ta), 105A (Tc)

6V, 10V

3.4V @ 250µA

126nC @ 10V

6775pF @ 50V

±20V

-

2.1W (Ta), 300W (Tc)

4.5 mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220

TO-220-3

SI4421DY-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 10A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 850µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.75 mOhm @ 14A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: 8-SOIC (0.154", 3.90mm Width)

Voorraad3.232

MOSFET (Metal Oxide)

20V

10A (Ta)

1.8V, 4.5V

800mV @ 850µA

125nC @ 4.5V

-

±8V

-

1.5W (Ta)

8.75 mOhm @ 14A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

MCH3486-TL-W

ON Semiconductor

MOSFET N-CH 60V 2A MCPH3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 137 mOhm @ 1A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70FL/MCPH3
Package / Case: 3-SMD, Flat Leads

package: 3-SMD, Flat Leads

Voorraad2.704

MOSFET (Metal Oxide)

60V

2A (Ta)

4V, 10V

2.6V @ 1mA

7nC @ 10V

310pF @ 20V

±20V

-

1W (Ta)

137 mOhm @ 1A, 10V

150°C (TJ)

Surface Mount

SC-70FL/MCPH3

3-SMD, Flat Leads

FQPF4N90C

Fairchild/ON Semiconductor

MOSFET N-CH 900V 4A TO-220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

Voorraad88.536

MOSFET (Metal Oxide)

900V

4A (Tc)

10V

5V @ 250µA

22nC @ 10V

960pF @ 25V

±30V

-

47W (Tc)

4.2 Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

SIRA58DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 40V 60A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 20V
Vgs (Max): +20V, -16V
FET Feature: -
Power Dissipation (Max): 27.7W (Tc)
Rds On (Max) @ Id, Vgs: 2.65 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

package: PowerPAK? SO-8

Voorraad29.814

MOSFET (Metal Oxide)

40V

60A (Tc)

4.5V, 10V

2.4V @ 250µA

75nC @ 10V

3750pF @ 20V

+20V, -16V

-

27.7W (Tc)

2.65 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8

NDP7060

Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 40A, 10V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

package: TO-220-3

Voorraad448.332

MOSFET (Metal Oxide)

60V

75A (Tc)

10V

4V @ 250µA

115nC @ 10V

3600pF @ 25V

±20V

-

150W (Tc)

13 mOhm @ 40A, 10V

-65°C ~ 175°C (TJ)

Through Hole

TO-220

TO-220-3

TN0104N3-G

Microchip Technology

MOSFET N-CH 40V 0.45A TO92-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs(th) (Max) @ Id: 1.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)

package: TO-226-3, TO-92-3 (TO-226AA)

Voorraad5.840

MOSFET (Metal Oxide)

40V

450mA (Ta)

3V, 10V

1.6V @ 500µA

-

70pF @ 20V

±20V

-

1W (Tc)

1.8 Ohm @ 1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-92-3

TO-226-3, TO-92-3 (TO-226AA)

SI4896DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 80V 6.7A 8SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: 8-SOIC (0.154", 3.90mm Width)

Voorraad7.488

MOSFET (Metal Oxide)

80V

6.7A (Ta)

6V, 10V

2V @ 250µA (Min)

41nC @ 10V

-

±20V

-

1.56W (Ta)

16.5 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

IPA65R150CFDXKSA2

Infineon Technologies

MOSFET N-CH 650V 22.4A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34.7W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

package: -

Voorraad1.497

MOSFET (Metal Oxide)

650 V

22.4A (Tc)

10V

4.5V @ 900µA

86 nC @ 10 V

2340 pF @ 100 V

±20V

-

34.7W (Tc)

150mOhm @ 9.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

SISH103DN-T1-GE3

Vishay Siliconix

P-CHANNEL 30 V (D-S) MOSFET POWE

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 15 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3.67W (Ta), 41.6W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH

package: -

Voorraad35.670

MOSFET (Metal Oxide)

30 V

16A (Ta), 54A (Tc)

4.5V, 10V

2.5V @ 250µA

72 nC @ 10 V

2540 pF @ 15 V

±30V

-

3.67W (Ta), 41.6W (Tc)

155mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8SH

SIHD186N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 19A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -

Voorraad13.569

MOSFET (Metal Oxide)

600 V

19A (Tc)

10V

5V @ 250µA

32 nC @ 10 V

1118 pF @ 100 V

±30V

-

156W (Tc)

201mOhm @ 9.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

R6515ENZC8

Rohm Semiconductor

MOSFET N-CH 650V 15A TO3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 430µA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack

package: -

Request a Quote

MOSFET (Metal Oxide)

650 V

15A (Tc)

10V

4V @ 430µA

40 nC @ 10 V

910 pF @ 25 V

±20V

-

60W (Tc)

315mOhm @ 6.5A, 10V

150°C (TJ)

Through Hole

TO-3PF

TO-3P-3 Full Pack

IPDQ65R029CFD7AXTMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 463W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

package: -

Request a Quote

MOSFET (Metal Oxide)

650 V

85A (Tc)

10V

4.5V @ 1.79mA

139 nC @ 10 V

7149 pF @ 400 V

±20V

-

463W (Tc)

29mOhm @ 35.8A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

IPL65R210CFDAUMA2

Infineon Technologies

MOSFET N-CH 650V 16.6A 4VSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.3A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN

package: -

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MOSFET (Metal Oxide)

650 V

16.6A (Tc)

10V

4.5V @ 700µA

68 nC @ 10 V

1850 pF @ 100 V

±20V

-

151W (Tc)

210mOhm @ 7.3A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4

4-PowerTSFN

PJD40N06A-AU_L2_000A1

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -

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MOSFET (Metal Oxide)

60 V

40A (Tc)

4.5V, 10V

2.5V @ 250µA

13.5 nC @ 4.5 V

1574 pF @ 25 V

±20V

-

71W (Tc)

17mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

PSMN3R2-40YLDX

Nexperia USA Inc.

MOSFET N-CH 40V 120A LFPAK56

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
Vgs (Max): ±20V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 115W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669

package: -

Voorraad8.940

MOSFET (Metal Oxide)

40 V

120A (Ta)

4.5V, 10V

2.05V @ 1mA

57 nC @ 10 V

4103 pF @ 20 V

±20V

Schottky Diode (Body)

115W (Ta)

3.3mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

LFPAK56, Power-SO8

SC-100, SOT-669

SCT4062KWATL

Rohm Semiconductor

1200V, 24A, 7-PIN SMD, TRENCH-ST

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Vgs (Max): +21V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7LA
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

package: -

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SiC (Silicon Carbide Junction Transistor)

1200 V

24A (Tc)

18V

4.8V @ 6.45mA

64 nC @ 18 V

1498 pF @ 800 V

+21V, -4V

-

81mOhm @ 12A, 18V

175°C (TJ)

Surface Mount

TO-263-7LA

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

UPA654TT-E1-A

Renesas Electronics Corporation

MOSFET P-CH 12V 6WSOF

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 88mOhm @ 1.5A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 6-WSOF
Package / Case: 6-SMD, Flat Leads

package: -

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MOSFET (Metal Oxide)

12 V

-

1.5V @ 1mA

2.7 nC @ 4 V

250 pF @ 10 V

-

88mOhm @ 1.5A, 4.5V

-

Surface Mount

6-WSOF

6-SMD, Flat Leads

IXFH50N80XA

IXYS

MOSFET N-CH 50A TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

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-

IXFP22N65X2M

IXYS

MOSFET N-CH 650V 22A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

package: -

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MOSFET (Metal Oxide)

650 V

22A (Tc)

10V

5V @ 1.5mA

37 nC @ 10 V

2190 pF @ 25 V

±30V

-

37W (Tc)

145mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Isolated Tab

TO-220-3 Full Pack, Isolated Tab

TQM056NH04LCR-RLG

Taiwan Semiconductor Corporation

40V, 54A, SINGLE N-CHANNEL POWER

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 78.9W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

package: -

Voorraad15.000

MOSFET (Metal Oxide)

40 V

17A (Ta), 54A (Tc)

4.5V, 10V

2.2V @ 250µA

45.6 nC @ 10 V

-

±16V

-

78.9W (Tc)

5.6mOhm @ 27A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-PDFN (5x6)

8-PowerTDFN

SCTW60N120G2

STMicroelectronics

DISCRETE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
Vgs (Max): +18V, -5V
FET Feature: -
Power Dissipation (Max): 389W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 18V
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: HiP247™
Package / Case: TO-247-3

package: -

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MOSFET (Metal Oxide)

1200 V

60A (Tc)

18V

5V @ 1mA

94 nC @ 8 V

1969 pF @ 800 V

+18V, -5V

-

389W (Tc)

52mOhm @ 30A, 18V

-55°C ~ 200°C (TJ)

Through Hole

HiP247™

TO-247-3