Pagina 82 - Transistoren - FET's, MOSFET's - RF | Discrete halfgeleiderproducten | Heisener Electronics
Contacteer ons
SalesDept@heisener.com +86-755-83210559 ext. 803
Aanmelden/Registreren
Language Translation

* Please refer to the English Version as our Official Version.

BOM
kar 0

Transistoren - FET's, MOSFET's - RF

Archief 3.855
Pagina  82/138
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BLC9G27LS-150AVY
Ampleon USA Inc.

RF FET LDMOS 65V 15DB SOT12751

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.69GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-1
  • Supplier Device Package: 6-DFM
package: SOT1275-1
Voorraad7.728
2.5GHz ~ 2.69GHz
15dB
28V
-
-
400mA
150W
65V
SOT1275-1
6-DFM
MRF8S21100HR5
NXP

FET RF 65V 2.17GHZ NI780H

  • Transistor Type: N-Channel
  • Frequency: 2.17GHz
  • Gain: 18.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
package: NI-780
Voorraad7.536
2.17GHz
18.3dB
28V
-
-
700mA
24W
65V
NI-780
NI-780
MRF8HP21130HR5
NXP

FET RF 2CH 65V 2.17GHZ NI780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 360mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
package: NI-780-4
Voorraad7.008
2.17GHz
14dB
28V
-
-
360mA
28W
65V
NI-780-4
NI-780-4
BLF6G22S-45,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT608B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 405mA
  • Power - Output: 2.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608B
  • Supplier Device Package: CDFM2
package: SOT-608B
Voorraad2.592
2.11GHz ~ 2.17GHz
18.5dB
28V
-
-
405mA
2.5W
65V
SOT-608B
CDFM2
BLF6G22LS-75,118
Ampleon USA Inc.

RF FET LDMOS 65V 18.7DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.7dB
  • Voltage - Test: 28V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 690mA
  • Power - Output: 17W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
package: SOT-502B
Voorraad4.256
2.11GHz ~ 2.17GHz
18.7dB
28V
18A
-
690mA
17W
65V
SOT-502B
SOT502B
CRF24060FE
Cree/Wolfspeed

FET RF 120V 1.1GHZ 440193

  • Transistor Type: Silicon Carbide MESFET
  • Frequency: 1.1GHz
  • Gain: 13dB
  • Voltage - Test: 48V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 60W
  • Voltage - Rated: 120V
  • Package / Case: 440193
  • Supplier Device Package: 440193
package: 440193
Voorraad3.360
1.1GHz
13dB
48V
9A
-
2A
60W
120V
440193
440193
hot PD55003STR-E
STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 17dB
  • Voltage - Test: 12.5V
  • Current Rating: 2.5A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 3W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
package: PowerSO-10 Exposed Bottom Pad
Voorraad28.692
500MHz
17dB
12.5V
2.5A
-
50mA
3W
40V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
MRF281SR1
NXP

FET RF 65V 1.93GHZ NI-200S

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 12.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 25mA
  • Power - Output: 4W
  • Voltage - Rated: 65V
  • Package / Case: NI-200S
  • Supplier Device Package: NI-200S
package: NI-200S
Voorraad4.848
1.93GHz
12.5dB
26V
-
-
25mA
4W
65V
NI-200S
NI-200S
hot MRF9135LSR3
NXP

FET RF 65V 880MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 17.8dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
package: NI-780S
Voorraad44.760
880MHz
17.8dB
26V
-
-
1.1A
25W
65V
NI-780S
NI-780S
NE350184C
CEL

FET RF 4V 20GHZ MICRO-X

  • Transistor Type: HFET
  • Frequency: 20GHz
  • Gain: 13.5dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.7dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: Micro-X ceramic (84C)
  • Supplier Device Package: 84C
package: Micro-X ceramic (84C)
Voorraad7.344
20GHz
13.5dB
2V
70mA
0.7dB
10mA
-
4V
Micro-X ceramic (84C)
84C
hot MMBFJ210
Fairchild/ON Semiconductor

JFET N-CH 25V 15MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad904.920
-
-
-
15mA
-
-
-
25V
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot BF244A
Fairchild/ON Semiconductor

JFET N-CH 30V 50MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 50mA
  • Noise Figure: 1.5dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad3.616
100MHz
-
15V
50mA
1.5dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
SPF-3143
RFMD

IC TRANS PHEMT 10GHZ SOT-343

  • Transistor Type: pHEMT FET
  • Frequency: 1.9GHz
  • Gain: 19.9dB
  • Voltage - Test: 5V
  • Current Rating: 180mA
  • Noise Figure: 0.9dB
  • Current - Test: 40mA
  • Power - Output: 17.7dBm
  • Voltage - Rated: 7V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: -
package: SC-82A, SOT-343
Voorraad4.624
1.9GHz
19.9dB
5V
180mA
0.9dB
40mA
17.7dBm
7V
SC-82A, SOT-343
-
PTFB183404FV2R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 17dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.6A
  • Power - Output: 80W
  • Voltage - Rated: 65V
  • Package / Case: H-37275-6/2
  • Supplier Device Package: H-37275-6/2
package: H-37275-6/2
Voorraad3.184
1.88GHz
17dB
30V
-
-
2.6A
80W
65V
H-37275-6/2
H-37275-6/2
AFV141KGSR5
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.4GHz
  • Gain: 17.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 105V
  • Package / Case: NI-1230-4S GW
  • Supplier Device Package: NI-1230-4S Gull Wing
package: NI-1230-4S GW
Voorraad3.024
1.4GHz
17.7dB
50V
-
-
100mA
1000W
105V
NI-1230-4S GW
NI-1230-4S Gull Wing
A2T07D160W04SR3
NXP

FET RF 2CH 70V 803MHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 803MHz
  • Gain: 21.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 30W
  • Voltage - Rated: 70V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
package: NI-780S-4
Voorraad3.952
803MHz
21.5dB
28V
-
-
450mA
30W
70V
NI-780S-4
NI-780S-4
hot MRF6S27015NR1
NXP

FET RF 68V 2.6GHZ TO270-2

  • Transistor Type: LDMOS
  • Frequency: 2.6GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 160mA
  • Power - Output: 3W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
package: TO-270AA
Voorraad10.080
2.6GHz
14dB
28V
-
-
160mA
3W
68V
TO-270AA
TO-270-2
IXZ2210N50L2
IXYS

RF MOSFET 2N-CHANNEL DE275

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 2MHz ~ 110MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 270W
  • Voltage - Rated: 500V
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: -
package: 8-SMD, Flat Lead Exposed Pad
Voorraad7.520
2MHz ~ 110MHz
-
-
1mA
-
-
270W
500V
8-SMD, Flat Lead Exposed Pad
-
BLM8G0710S-15PBY
Ampleon USA Inc.

RF FET LDMOS 65V 36.1DB SOT12112

  • Transistor Type: LDMOS (Dual)
  • Frequency: 957.5MHz
  • Gain: 36.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 15mA
  • Power - Output: 1.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1211-2
  • Supplier Device Package: 16-HSOPF
package: SOT-1211-2
Voorraad7.936
957.5MHz
36.1dB
28V
-
-
15mA
1.5W
65V
SOT-1211-2
16-HSOPF
BLF647P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT1121A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.3GHz
  • Gain: 18dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 200W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121A
  • Supplier Device Package: CDFM4
package: SOT-1121A
Voorraad8.556
1.3GHz
18dB
32V
-
-
100mA
200W
65V
SOT-1121A
CDFM4
A5G35S004N-3400
NXP

RF MOSFET 48V 6DFN

  • Transistor Type: -
  • Frequency: 3.3GHz ~ 4.3GHz
  • Gain: 16.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 12 mA
  • Power - Output: 24.5dBm
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (4x4.5)
package: -
Request a Quote
3.3GHz ~ 4.3GHz
16.9dB
48 V
-
-
12 mA
24.5dBm
125 V
6-LDFN Exposed Pad
6-PDFN (4x4.5)
PXAC210552FC-V1-R0
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
AFV10700GSR5
NXP

RF MOSFET LDMOS 50V NI780

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 19.2dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 700W
  • Voltage - Rated: 105 V
  • Package / Case: NI-780GS-4L
  • Supplier Device Package: NI-780GS-4L
package: -
Request a Quote
1.03GHz ~ 1.09GHz
19.2dB
50 V
10µA
-
100 mA
700W
105 V
NI-780GS-4L
NI-780GS-4L
CGH25120F
MACOM Technology Solutions

RF MOSFET HEMT 28V 440162

  • Transistor Type: HEMT
  • Frequency: 2.3GHz ~ 2.7GHz
  • Gain: 12.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 130W
  • Voltage - Rated: 84 V
  • Package / Case: 440162
  • Supplier Device Package: 440162
package: -
Voorraad75
2.3GHz ~ 2.7GHz
12.5dB
28 V
-
-
500 mA
130W
84 V
440162
440162
SAC2504
SuperApex, LLC

RF MOSFET 2V DIE

  • Transistor Type: -
  • Frequency: 40GHz
  • Gain: 6dB
  • Voltage - Test: 2 V
  • Current Rating: 85mA
  • Noise Figure: 1.4dB
  • Current - Test: 20 mA
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: Die
  • Supplier Device Package: Die
package: -
Request a Quote
40GHz
6dB
2 V
85mA
1.4dB
20 mA
-
-
Die
Die
RF2L16080CF2
STMicroelectronics

RF MOSFET LDMOS A2

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz ~ 1.7GHz
  • Gain: 18dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 80W
  • Voltage - Rated: 65 V
  • Package / Case: 2L-FLG
  • Supplier Device Package: A2
package: -
Request a Quote
1.3GHz ~ 1.7GHz
18dB
-
1µA
-
-
80W
65 V
2L-FLG
A2
A2V09H300-04NR3
NXP

RF MOSFET LDMOS 48V OM780G-4

  • Transistor Type: LDMOS
  • Frequency: 720MHz ~ 960MHz
  • Gain: 19.7dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 53dBm
  • Voltage - Rated: 105 V
  • Package / Case: OM-780G-4L
  • Supplier Device Package: OM-780G-4L
package: -
Request a Quote
720MHz ~ 960MHz
19.7dB
48 V
10µA
-
400 mA
53dBm
105 V
OM-780G-4L
OM-780G-4L
BLC10G19XS-601AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.93GHz ~ 1.995GHz
  • Gain: 15dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.06 A
  • Power - Output: 600W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
package: -
Request a Quote
1.93GHz ~ 1.995GHz
15dB
30 V
2.8µA
-
1.06 A
600W
65 V
SOT-1258-4
SOT1258-4