Pagina 8 - Transistoren - FET's, MOSFET's - RF | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - FET's, MOSFET's - RF

Archief 3.855
Pagina  8/138
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BF5030WE6327HTSA1
Infineon Technologies

MOSFET N-CH 8V 25MA SOT-343

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 24dB
  • Voltage - Test: 3V
  • Current Rating: 25mA
  • Noise Figure: 1.3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
package: SC-82A, SOT-343
Voorraad3.456
800MHz
24dB
3V
25mA
1.3dB
10mA
-
8V
SC-82A, SOT-343
PG-SOT343-4
hot NE3512S02-T1C-A
CEL

HJ-FET NCH 13.5DB S02

  • Transistor Type: HFET
  • Frequency: 12GHz
  • Gain: 13.5dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.35dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S02
package: 4-SMD, Flat Leads
Voorraad48.132
12GHz
13.5dB
2V
70mA
0.35dB
10mA
-
4V
4-SMD, Flat Leads
S02
BLF6G27L-40P,112
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1121A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121A
  • Supplier Device Package: CDFM4
package: SOT-1121A
Voorraad7.424
2.5GHz ~ 2.7GHz
17.5dB
28V
-
-
450mA
12W
65V
SOT-1121A
CDFM4
MRF8S21140HR5
NXP

FET RF 65V 2.14GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 17.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 970mA
  • Power - Output: 34W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
package: NI-780
Voorraad3.808
2.14GHz
17.9dB
28V
-
-
970mA
34W
65V
NI-780
NI-780
MRF8P20100HR3
NXP

FET RF 2CH 65V 2.03GHZ NI780H-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.03GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
package: NI-780-4
Voorraad7.680
2.03GHz
16dB
28V
-
-
400mA
20W
65V
NI-780-4
NI-780-4
2N5246_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 7MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 7mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad4.208
-
-
-
7mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot MRF19030LR3
NXP

FET RF 65V 1.96GHZ NI-400

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 13dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: NI-400
  • Supplier Device Package: NI-400
package: NI-400
Voorraad4.352
1.96GHz
13dB
26V
-
-
300mA
30W
65V
NI-400
NI-400
hot MRFG35010
NXP

FET RF 15V 3.55GHZ NI360HF

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 9W
  • Voltage - Rated: 15V
  • Package / Case: NI-360HF
  • Supplier Device Package: NI-360HF
package: NI-360HF
Voorraad7.176
3.55GHz
10dB
12V
-
-
130mA
9W
15V
NI-360HF
NI-360HF
MRF6S24140HSR3
NXP

FET RF 68V 2.39GHZ NI-88OS

  • Transistor Type: LDMOS
  • Frequency: 2.39GHz
  • Gain: 15.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 28W
  • Voltage - Rated: 68V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
package: NI-880S
Voorraad2.992
2.39GHz
15.2dB
28V
-
-
1.3A
28W
68V
NI-880S
NI-880S
SD56120M
STMicroelectronics

FET RF 65V 860MHZ M252

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 16dB
  • Voltage - Test: 32V
  • Current Rating: 14A
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 120W
  • Voltage - Rated: 65V
  • Package / Case: M252
  • Supplier Device Package: M252
package: M252
Voorraad7.152
860MHz
16dB
32V
14A
-
400mA
120W
65V
M252
M252
BLF546,112
Ampleon USA Inc.

RF FET 2 NC 65V 13DB SOT268A

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 500MHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: 80mA
  • Power - Output: 80W
  • Voltage - Rated: 65V
  • Package / Case: SOT-268A
  • Supplier Device Package: CDFM4
package: SOT-268A
Voorraad4.800
500MHz
13dB
28V
9A
-
80mA
80W
65V
SOT-268A
CDFM4
PTVA101K02EVV1R0XTMA1
Infineon Technologies

IC AMP RF LDMOS H-36275-4

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 900W
  • Voltage - Rated: 105V
  • Package / Case: H-36275-4
  • Supplier Device Package: H-36275-4
package: H-36275-4
Voorraad6.816
1.03GHz ~ 1.09GHz
21dB
50V
-
-
150mA
900W
105V
H-36275-4
H-36275-4
A2T18H410-24SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.81GHz
  • Gain: 17.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 71W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
package: NI-1230-4LS2L
Voorraad6.640
1.81GHz
17.4dB
28V
-
-
800mA
71W
65V
NI-1230-4LS2L
NI-1230-4LS2L
BLF8G24LS-200PNJ
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.74A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
package: SOT539B
Voorraad6.384
2.3GHz ~ 2.4GHz
17.2dB
28V
-
-
1.74A
60W
65V
SOT539B
SOT539B
LET9060
STMicroelectronics

IC RF POWER MOSFET N-CH PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 60W
  • Voltage - Rated: 80V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Voorraad7.360
960MHz
17.2dB
28V
12A
-
300mA
60W
80V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
150-501N04A-00
IXYS

RF MOSFET N-CHANNEL DE150

  • Transistor Type: N-Channel
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 200W
  • Voltage - Rated: 500V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE150
package: 6-SMD, Flat Lead Exposed Pad
Voorraad6.512
100MHz
-
-
25µA
-
-
200W
500V
6-SMD, Flat Lead Exposed Pad
DE150
275-501N16A-00
IXYS

RF MOSFET N-CHANNEL DE275

  • Transistor Type: N-Channel
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 590W
  • Voltage - Rated: 500V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE275
package: 6-SMD, Flat Lead Exposed Pad
Voorraad7.440
100MHz
-
-
1mA
-
-
590W
500V
6-SMD, Flat Lead Exposed Pad
DE275
PXAD214218FV-V1-R2
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37275G-6

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 720 mA
  • Power - Output: 290W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275G-6/2
  • Supplier Device Package: H-37275G-6/2
package: -
Request a Quote
2.11GHz ~ 2.17GHz
13.5dB
28 V
10µA
-
720 mA
290W
65 V
H-37275G-6/2
H-37275G-6/2
A3G18H500-04SR3
NXP

RF MOSFET LDMOS 48V NI780

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 15.4dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 107W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780S-4L
  • Supplier Device Package: NI-780S-4L
package: -
Request a Quote
1.805GHz ~ 1.88GHz
15.4dB
48 V
-
-
200 mA
107W
125 V
NI-780S-4L
NI-780S-4L
NE3512S02-T1D-A
Renesas Electronics Corporation

RF MOSFET HFET 2V S02

  • Transistor Type: HFET
  • Frequency: 12GHz
  • Gain: 13.5dB
  • Voltage - Test: 2 V
  • Current Rating: 70mA
  • Noise Figure: 0.35dB
  • Current - Test: 10 mA
  • Power - Output: -
  • Voltage - Rated: 4 V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S02
package: -
Request a Quote
12GHz
13.5dB
2 V
70mA
0.35dB
10 mA
-
4 V
4-SMD, Flat Leads
S02
BLF989ESU
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT539B

  • Transistor Type: LDMOS
  • Frequency: 470MHz ~ 700MHz
  • Gain: 20dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 1000W
  • Voltage - Rated: 108 V
  • Package / Case: SOT-539B
  • Supplier Device Package: SOT539B
package: -
Voorraad309
470MHz ~ 700MHz
20dB
50 V
2.8µA
-
600 mA
1000W
108 V
SOT-539B
SOT539B
1012GN-800V
Microchip Technology

RF MOSFET GAN 54V 55-KR

  • Transistor Type: GaN
  • Frequency: 1.025GHz ~ 1.15GHz
  • Gain: 19.3dB
  • Voltage - Test: 54 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 120 mA
  • Power - Output: 825W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
package: -
Request a Quote
1.025GHz ~ 1.15GHz
19.3dB
54 V
-
-
120 mA
825W
150 V
55-KR
55-KR
PTFC210202FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.2GHz
  • Gain: 21dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 170 mA
  • Power - Output: 5W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
package: -
Voorraad90
2.2GHz
21dB
28 V
-
-
170 mA
5W
65 V
H-37248-4
H-37248-4
CGHV40200PP-AMP1
MACOM Technology Solutions

RF MOSFET HEMT 50V 440199

  • Transistor Type: HEMT
  • Frequency: 1.5GHz ~ 2GHz
  • Gain: 21.7dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 200W
  • Voltage - Rated: 150 V
  • Package / Case: 440199
  • Supplier Device Package: 440199
package: -
Voorraad6
1.5GHz ~ 2GHz
21.7dB
50 V
-
-
1.2 A
200W
150 V
440199
440199
BLA9H0912LS-700GU
Ampleon USA Inc.

RF MOSFET LDMOS 50V CDFM2

  • Transistor Type: LDMOS
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 20dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 700W
  • Voltage - Rated: 106 V
  • Package / Case: SOT-502E
  • Supplier Device Package: CDFM2
package: -
Voorraad54
960MHz ~ 1.215GHz
20dB
50 V
2.8µA
-
100 mA
700W
106 V
SOT-502E
CDFM2
A2T18S260-12SR3
NXP

RF MOSFET LDMOS 28V NI780

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.995GHz
  • Gain: 18.9dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.4 A
  • Power - Output: 257W
  • Voltage - Rated: 65 V
  • Package / Case: NI-780-2S2L
  • Supplier Device Package: NI-780-2S2L
package: -
Request a Quote
1.805GHz ~ 1.995GHz
18.9dB
28 V
10µA
-
1.4 A
257W
65 V
NI-780-2S2L
NI-780-2S2L
BLC10G22XS-602AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15.4dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 600W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
package: -
Voorraad180
2.11GHz ~ 2.17GHz
15.4dB
30 V
2.8µA
-
1.2 A
600W
65 V
SOT-1258-4
SOT1258-4
GTRA364002FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 13dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 220 mA
  • Power - Output: 400W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
package: -
Voorraad150
3.4GHz ~ 3.6GHz
13dB
48 V
-
-
220 mA
400W
125 V
H-37248C-4
H-37248C-4