Pagina 43 - Transistoren - FET's, MOSFET's - RF | Discrete halfgeleiderproducten | Heisener Electronics
Contacteer ons
SalesDept@heisener.com +86-755-83210559 ext. 807
Aanmelden/Registreren
Language Translation

* Please refer to the English Version as our Official Version.

BOM
kar 0

Transistoren - FET's, MOSFET's - RF

Archief 3.855
Pagina  43/138
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
hot NE4210S01-T1B
CEL

HJ-FET 13DB S01

  • Transistor Type: HFET
  • Frequency: 12GHz
  • Gain: 13dB
  • Voltage - Test: 2V
  • Current Rating: 15mA
  • Noise Figure: 0.5dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD
  • Supplier Device Package: SMD
package: 4-SMD
Voorraad877.608
12GHz
13dB
2V
15mA
0.5dB
10mA
-
4V
4-SMD
SMD
BLF8G20LS-200V,118
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1120B

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1120B
  • Supplier Device Package: CDFM6
package: SOT-1120B
Voorraad3.792
1.81GHz ~ 1.88GHz
17.5dB
28V
-
-
1.6A
55W
65V
SOT-1120B
CDFM6
ON5448,518
NXP

MOSFET RF 64QFP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad6.448
-
-
-
-
-
-
-
-
-
-
ON5250/A,135
NXP

MOSFET RF SOT223 SC-73

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
package: TO-261-4, TO-261AA
Voorraad4.912
-
-
-
-
-
-
-
-
TO-261-4, TO-261AA
SOT-223
MRFE6P9220HR3
NXP

FET RF 66V 880MHZ NI-860C3

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 47W
  • Voltage - Rated: 66V
  • Package / Case: NI-860C3
  • Supplier Device Package: NI-860C3
package: NI-860C3
Voorraad4.176
880MHz
20dB
28V
-
-
1.6A
47W
66V
NI-860C3
NI-860C3
hot MRF7S21210HSR3
NXP

FET RF 65V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
package: NI-780S
Voorraad7.032
2.17GHz
18.5dB
28V
-
-
1.4A
63W
65V
NI-780S
NI-780S
2N5952_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 8MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 1kHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 8mA
  • Noise Figure: 2dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad3.248
1kHz
-
15V
8mA
2dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRF19090SR3
NXP

FET RF 65V 1.93GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 11.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 90W
  • Voltage - Rated: 65V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
package: NI-880S
Voorraad2.464
1.93GHz
11.5dB
26V
-
-
750mA
90W
65V
NI-880S
NI-880S
hot MRF6S27050HR5
NXP

FET RF 68V 2.62GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.62GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 7W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
package: NI-780
Voorraad5.344
2.62GHz
16dB
28V
-
-
500mA
7W
68V
NI-780
NI-780
MRFG35005MR5
NXP

FET RF 15V 3.55GHZ 1.5PLD

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 11dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 80mA
  • Power - Output: 4.5W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
package: PLD-1.5
Voorraad2.928
3.55GHz
11dB
12V
-
-
80mA
4.5W
15V
PLD-1.5
PLD-1.5
BF908WR,115
NXP

MOSFET NCH DUAL GATE 12V CMPAK-4

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 200MHz
  • Gain: -
  • Voltage - Test: 8V
  • Current Rating: 40mA
  • Noise Figure: 0.6dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 12V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
package: SC-82A, SOT-343
Voorraad3.504
200MHz
-
8V
40mA
0.6dB
15mA
-
12V
SC-82A, SOT-343
CMPAK-4
PTFB213208FVV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad7.536
-
-
-
-
-
-
-
-
-
-
AFT26H250-24SR6
NXP

FET RF 2CH 65V 2.5GHZ NI1230S-4

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz
  • Gain: 14.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
package: NI-1230-4LS2L
Voorraad6.928
2.5GHz
14.1dB
28V
-
-
700mA
50W
65V
NI-1230-4LS2L
NI-1230-4LS2L
hot MRF6S19140HSR3
NXP

FET RF 68V 1.99GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.15A
  • Power - Output: 29W
  • Voltage - Rated: 68V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
package: NI-880S
Voorraad7.836
1.93GHz ~ 1.99GHz
16dB
28V
-
-
1.15A
29W
68V
NI-880S
NI-880S
A2T18H160-24SR3
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.81GHz
  • Gain: 17.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4L2L
  • Supplier Device Package: NI-780S-4L2L
package: NI-780S-4L2L
Voorraad7.344
1.81GHz
17.9dB
28V
-
-
400mA
28W
65V
NI-780S-4L2L
NI-780S-4L2L
A2T21S160-12SR3
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 38W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-2S2L
  • Supplier Device Package: NI-780-2S2L
package: NI-780-2S2L
Voorraad3.840
2.17GHz
18.4dB
28V
-
-
600mA
38W
65V
NI-780-2S2L
NI-780-2S2L
BLF8G22LS-140J
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 33W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
package: SOT-502B
Voorraad7.968
2.11GHz
18.5dB
28V
-
-
900mA
33W
65V
SOT-502B
SOT502B
BLM8D1822-25BZ
Ampleon USA Inc.

BLM8D1822-25B/SOT1462/REELDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad3.728
-
-
-
-
-
-
-
-
-
-
PTFC270101MV1R1KXUMA1
Infineon Technologies

RFP-LD10M

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 20.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 120mA
  • Power - Output: 2.4W
  • Voltage - Rated: 65V
  • Package / Case: 10-LDFN Exposed Pad
  • Supplier Device Package: PG-SON-10
package: 10-LDFN Exposed Pad
Voorraad2.240
2.17GHz
20.5dB
28V
-
-
120mA
2.4W
65V
10-LDFN Exposed Pad
PG-SON-10
BLC9G20LS-361AVTY
Ampleon USA Inc.

RF FET LDMOS 65V 15.7DB SOT12583

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 15.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: 0.6dB
  • Current - Test: 300mA
  • Power - Output: 360W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1258-3
  • Supplier Device Package: DFM6
package: SOT-1258-3
Voorraad7.032
1.81GHz ~ 1.88GHz
15.7dB
28V
-
0.6dB
300mA
360W
65V
SOT-1258-3
DFM6
PTRA084808NF-V1-R5
MACOM Technology Solutions

RF MOSFET LDMOS 48V 6HBSOF

  • Transistor Type: LDMOS
  • Frequency: 734MHz ~ 821MHz
  • Gain: 18.2dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 450 mA
  • Power - Output: 550W
  • Voltage - Rated: 105 V
  • Package / Case: HBSOF-6-2
  • Supplier Device Package: PG-HBSOF-6-2
package: -
Request a Quote
734MHz ~ 821MHz
18.2dB
48 V
10µA
-
450 mA
550W
105 V
HBSOF-6-2
PG-HBSOF-6-2
TAV1-551
Mini-Circuits

RF MOSFET E-PHEMT 4V TE2769

  • Transistor Type: E-pHEMT
  • Frequency: 6GHz
  • Gain: 8.6dB
  • Voltage - Test: 4 V
  • Current Rating: -
  • Noise Figure: 1.4dB
  • Current - Test: 15 mA
  • Power - Output: 19.8dBm
  • Voltage - Rated: 5 V
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: TE2769
package: -
Voorraad9.000
6GHz
8.6dB
4 V
-
1.4dB
15 mA
19.8dBm
5 V
4-SMD, No Lead
TE2769
A2T18S261W12NR3
NXP

RF MOSFET LDMOS 28V OM880X-2L2L

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 18.2dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.5 A
  • Power - Output: 280W
  • Voltage - Rated: 65 V
  • Package / Case: OM-880X-2L2L
  • Supplier Device Package: OM-880X-2L2L
package: -
Request a Quote
1.805GHz ~ 1.88GHz
18.2dB
28 V
10µA
-
1.5 A
280W
65 V
OM-880X-2L2L
OM-880X-2L2L
RF2L16180CF2
STMicroelectronics

RF MOSFET LDMOS B2

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz ~ 1.7GHz
  • Gain: 17.5dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 180W
  • Voltage - Rated: 65 V
  • Package / Case: B2
  • Supplier Device Package: B2
package: -
Request a Quote
1.3GHz ~ 1.7GHz
17.5dB
-
1µA
-
-
180W
65 V
B2
B2
A2T08VD021NT1
NXP

RF MOSFET PQFN8X8

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
MWT-5F
CML Microcircuits

RF MOSFET GAAS FET 6V CHIP

  • Transistor Type: GaAs FET
  • Frequency: 500MHz ~ 26GHz
  • Gain: 19dB
  • Voltage - Test: 6 V
  • Current Rating: 80mA
  • Noise Figure: 3.5dB
  • Current - Test: 30 mA
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: Die
  • Supplier Device Package: Chip
package: -
Voorraad300
500MHz ~ 26GHz
19dB
6 V
80mA
3.5dB
30 mA
-
-
Die
Chip
A5G37H110NT4
NXP

RF MOSFET GAN 48V 6DFN

  • Transistor Type: GaN
  • Frequency: 3.6GHz ~ 3.8GHz
  • Gain: 15.1dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 70 mA
  • Power - Output: 13.5W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
package: -
Request a Quote
3.6GHz ~ 3.8GHz
15.1dB
48 V
-
-
70 mA
13.5W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)
PTFA220041M-V4
MACOM Technology Solutions

RF MOSFET LDMOS 28V 10SON

  • Transistor Type: LDMOS
  • Frequency: 940MHz
  • Gain: 18.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50 mA
  • Power - Output: 5W
  • Voltage - Rated: 65 V
  • Package / Case: 10-LDFN Exposed Pad
  • Supplier Device Package: PG-SON-10
package: -
Request a Quote
940MHz
18.5dB
28 V
-
-
50 mA
5W
65 V
10-LDFN Exposed Pad
PG-SON-10