Pagina 21 - Transistoren - FET's, MOSFET's - RF | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - FET's, MOSFET's - RF

Archief 3.855
Pagina  21/138
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BF 5030R E6327
Infineon Technologies

MOSFET N-CH 8V 25MA SOT143R

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 24dB
  • Voltage - Test: 3V
  • Current Rating: 25mA
  • Noise Figure: 1.3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: SOT-143R
  • Supplier Device Package: PG-SOT143R-4
package: SOT-143R
Voorraad7.712
800MHz
24dB
3V
25mA
1.3dB
10mA
-
8V
SOT-143R
PG-SOT143R-4
PTFA191001F V4 R250
Infineon Technologies

IC FET RF LDMOS 100W H-37248-2

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 17dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 44dBm
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
package: 2-Flatpack, Fin Leads, Flanged
Voorraad4.064
1.96GHz
17dB
30V
10µA
-
900mA
44dBm
65V
2-Flatpack, Fin Leads, Flanged
H-37248-2
BLF8G27LS-100PU
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 860mA
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121B
  • Supplier Device Package: CDFM4
package: SOT-1121B
Voorraad7.776
2.5GHz ~ 2.7GHz
18dB
28V
-
-
860mA
25W
65V
SOT-1121B
CDFM4
MRF7S18125BHR5
NXP

FET RF 65V 1.93GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 125W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
package: NI-780
Voorraad5.168
1.93GHz
16.5dB
28V
-
-
1.1A
125W
65V
NI-780
NI-780
hot MD7P19130HSR3
NXP

FET RF 2CH 65V 1.99GHZ NI780HS-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.99GHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.25A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
package: NI-780S-4
Voorraad10.464
1.99GHz
20dB
28V
-
-
1.25A
40W
65V
NI-780S-4
NI-780S-4
MRF7S38040HR5
NXP

FET RF 65V 3.6GHZ NI-400

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 14dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 8W
  • Voltage - Rated: 65V
  • Package / Case: NI-400-240
  • Supplier Device Package: NI-400-240
package: NI-400-240
Voorraad7.648
3.4GHz ~ 3.6GHz
14dB
30V
-
-
450mA
8W
65V
NI-400-240
NI-400-240
MRF6S9060NBR1
NXP

FET RF 68V 880MHZ TO-272-2

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 21.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 14W
  • Voltage - Rated: 68V
  • Package / Case: TO-272BC
  • Supplier Device Package: TO-272-2
package: TO-272BC
Voorraad6.176
880MHz
21.4dB
28V
-
-
450mA
14W
68V
TO-272BC
TO-272-2
BLF521,112
Ampleon USA Inc.

RF FET NCHA 40V 13DB SOT172D

  • Transistor Type: N-Channel
  • Frequency: 500MHz
  • Gain: 13dB
  • Voltage - Test: 12.5V
  • Current Rating: 1A
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 2W
  • Voltage - Rated: 40V
  • Package / Case: SOT-172D
  • Supplier Device Package: CRDB4
package: SOT-172D
Voorraad7.632
500MHz
13dB
12.5V
1A
-
10mA
2W
40V
SOT-172D
CRDB4
PTFA041501EV4R0XTMA1
Infineon Technologies

RF MOSFET LDMOS 28V H-36248-2

  • Transistor Type: LDMOS
  • Frequency: 420MHz ~ 500MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
package: 2-Flatpack, Fin Leads
Voorraad6.256
420MHz ~ 500MHz
21dB
28V
1µA
-
900mA
150W
65V
2-Flatpack, Fin Leads
H-36248-2
PXFC192207NFV1R500XUMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad7.936
-
-
-
-
-
-
-
-
-
-
PTFB091507FHV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad7.968
-
-
-
-
-
-
-
-
-
-
BF888H6327XTSA1
Infineon Technologies

MOSFET N-CH RF 12V 30MA SOT-343

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad5.296
-
-
-
-
-
-
-
-
-
-
MMRF1009HSR5
NXP

FET RF 110V 1.03GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 19.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 500W
  • Voltage - Rated: 110V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
package: NI-780S
Voorraad3.840
1.03GHz
19.7dB
50V
-
-
200mA
500W
110V
NI-780S
NI-780S
BLC8G09XS-400AVTY
Ampleon USA Inc.

BLC8G09XS-400AVT/SOT1258/REELD

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad5.760
-
-
-
-
-
-
-
-
-
-
hot MRF6V2150NBR5
NXP

FET RF 110V 220MHZ TO272-4

  • Transistor Type: LDMOS
  • Frequency: 220MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 150W
  • Voltage - Rated: 110V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
package: TO-272BB
Voorraad5.040
220MHz
25dB
50V
-
-
450mA
150W
110V
TO-272BB
TO-272 WB-4
hot MRF7S19120NR1
NXP

FET RF 65V 1.99GHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 36W
  • Voltage - Rated: 65V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
package: TO-270AB
Voorraad35.592
1.99GHz
18dB
28V
-
-
1.2A
36W
65V
TO-270AB
TO-270 WB-4
hot MRF6S18060NR1
NXP

FET RF 68V 1.99GHZ TO270-4

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 15dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 60W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
package: TO-270AB
Voorraad7.984
1.99GHz
15dB
26V
-
-
600mA
60W
68V
TO-270AB
TO-270 WB-4
CLF1G0060S-30U
Ampleon USA Inc.

RF FET HEMT 150V 13DB SOT1227B

  • Transistor Type: HEMT
  • Frequency: 3GHz ~ 3.5GHz
  • Gain: 13dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 70mA
  • Power - Output: 30W
  • Voltage - Rated: 150V
  • Package / Case: SOT-1227B
  • Supplier Device Package: SOT-1227B
package: SOT-1227B
Voorraad5.328
3GHz ~ 3.5GHz
13dB
50V
-
-
70mA
30W
150V
SOT-1227B
SOT-1227B
UF28150J
M/A-Com Technology Solutions

MOSFET 150W 28V 100-500MHZ

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 100MHz ~ 500MHz
  • Gain: 8dB
  • Voltage - Test: 28V
  • Current Rating: 16A
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad3.712
100MHz ~ 500MHz
8dB
28V
16A
-
400mA
150W
65V
-
-
MRF1511NT1
NXP

FET RF 40V 175MHZ PLD-1.5

  • Transistor Type: LDMOS
  • Frequency: 175MHz
  • Gain: 13dB
  • Voltage - Test: 7.5V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 40V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
package: PLD-1.5
Voorraad3.392
175MHz
13dB
7.5V
4A
-
150mA
8W
40V
PLD-1.5
PLD-1.5
BLP8G10S-270PWY
Ampleon USA Inc.

RF FET LDMOS 65V 20DB SOT12212

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 718.5MHz ~ 765.5MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 56W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1221-2
  • Supplier Device Package: 6-HSOPF
package: SOT-1221-2
Voorraad6.864
718.5MHz ~ 765.5MHz
20dB
28V
-
-
2A
56W
65V
SOT-1221-2
6-HSOPF
CGHV1J006D-GP4
MACOM Technology Solutions

RF MOSFET HEMT 40V DIE

  • Transistor Type: HEMT
  • Frequency: 18GHz
  • Gain: 17dB
  • Voltage - Test: 40 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30 mA
  • Power - Output: 6W
  • Voltage - Rated: 100 V
  • Package / Case: Die
  • Supplier Device Package: Die
package: -
Request a Quote
18GHz
17dB
40 V
-
-
30 mA
6W
100 V
Die
Die
PTFC270101M-V1-R1K
MACOM Technology Solutions

RF MOSFET LDMOS 28V 10SON

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 20.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 120 mA
  • Power - Output: 2.4W
  • Voltage - Rated: 65 V
  • Package / Case: 10-LDFN Exposed Pad
  • Supplier Device Package: PG-SON-10
package: -
Voorraad48
2.17GHz
20.5dB
28 V
-
-
120 mA
2.4W
65 V
10-LDFN Exposed Pad
PG-SON-10
TAV2-14LN
Mini-Circuits

RF MOSFET E-PHEMT 4V

  • Transistor Type: E-pHEMT
  • Frequency: 50MHz ~ 10GHz
  • Gain: 23.4dB
  • Voltage - Test: 4 V
  • Current Rating: 2µA
  • Noise Figure: 2.5dB
  • Current - Test: 4 mA
  • Power - Output: 19.4dBm
  • Voltage - Rated: 5 V
  • Package / Case: 6-TDFN Exposed Pad
  • Supplier Device Package: -
package: -
Voorraad5.601
50MHz ~ 10GHz
23.4dB
4 V
2µA
2.5dB
4 mA
19.4dBm
5 V
6-TDFN Exposed Pad
-
PXAE261908NF-V1-R5
MACOM Technology Solutions

RF MOSFET LDMOS 28V 6HBSOF

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.515GHz ~ 2.675GHz
  • Gain: 13.5dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 450 mA
  • Power - Output: 240W
  • Voltage - Rated: 65 V
  • Package / Case: PG-HBSOF-6-3
  • Supplier Device Package: PG-HBSOF-6-3
package: -
Request a Quote
2.515GHz ~ 2.675GHz
13.5dB
28 V
10µA
-
450 mA
240W
65 V
PG-HBSOF-6-3
PG-HBSOF-6-3
2SK238-T1B-A
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
A5G26H110N-2496
NXP

RF MOSFET 48V 6DFN

  • Transistor Type: -
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 17.7dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50 mA
  • Power - Output: 15W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
package: -
Request a Quote
2.496GHz ~ 2.69GHz
17.7dB
48 V
-
-
50 mA
15W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)
BB504MDS-TL-E
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-