Pagina 90 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  90/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF9952PBF
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad2.160
Logic Level Gate
30V
3.5A, 2.3A
100 mOhm @ 2.2A, 10V
1V @ 250µA
14nC @ 10V
190pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BUK7K6R2-40E/CX
NXP

MOSFET 2N-CH 56LFPAK

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad6.640
-
-
-
-
-
-
-
-
-
-
-
-
AON7932_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6.6A/8.1A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN (3x3)
package: 8-WDFN Exposed Pad
Voorraad2.352
Logic Level Gate
30V
6.6A, 8.1A
20 mOhm @ 6.6A, 10V
2.4V @ 250µA
6.5nC @ 10V
460pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN (3x3)
EPC2100ENG
EPC

TRANS GAN 2N-CH 30V BUMPED DIE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
package: Die
Voorraad5.296
GaNFET (Gallium Nitride)
30V
9.5A, 38A
8 mOhm @ 25A, 5V
2.5V @ 4mA
3.5nC @ 15V
380pF @ 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
APTM120DDA57T3G
Microsemi Corporation

MOSFET 2N-CH 1200V 17A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
package: SP3
Voorraad3.840
Standard
1200V (1.2kV)
17A
684 mOhm @ 8.5A, 10V
5V @ 2.5mA
187nC @ 10V
5155pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
IRF7341GTRPBF
Infineon Technologies

MOSFET N-CH 55V 5.1A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad2.720
Standard
55V
5.1A
50 mOhm @ 5.1A, 10V
1V @ 250µA (Min)
44nC @ 10V
780pF @ 25V
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTMC120AM20CT1AG
Microsemi Corporation

MOSFET 2N-CH 1200V 143A SP1

  • FET Type: 2 N Channel (Phase Leg)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 143A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id: 2.3V @ 2mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 1000V
  • Power - Max: 600W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
package: SP1
Voorraad2.944
Standard
1200V (1.2kV)
143A
17 mOhm @ 100A, 20V
2.3V @ 2mA (Typ)
360nC @ 20V
5960pF @ 1000V
600W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTC60AM24T1G
Microsemi Corporation

MOSFET 2N-CH 600V 95A SP1

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 95A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
package: SP1
Voorraad3.536
Standard
600V
95A
24 mOhm @ 47.5A, 10V
3.9V @ 5mA
300nC @ 10V
14400pF @ 25V
462W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
NTMFD4902NFT3G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual), Schottky
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
  • Power - Max: 1.1W, 1.16W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
package: 8-PowerTDFN
Voorraad7.456
Logic Level Gate
30V
10.3A, 13.3A
6.5 mOhm @ 10A, 10V
2.2V @ 250µA
9.7nC @ 4.5V
1150pF @ 15V
1.1W, 1.16W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
hot SI4202DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 12.1A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.1A
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
  • Power - Max: 3.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad7.888
Logic Level Gate
30V
12.1A
14 mOhm @ 8A, 10V
2.5V @ 250µA
17nC @ 10V
710pF @ 15V
3.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD1117SAL
Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8SOIC

  • FET Type: 2 P-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.112
Standard
10.6V
-
1800 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI7980DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 8A PPAK SO-8

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
  • Power - Max: 19.8W, 21.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad4.976
Standard
20V
8A
22 mOhm @ 5A, 10V
2.5V @ 250µA
27nC @ 10V
1010pF @ 10V
19.8W, 21.9W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
FC8J33040L
Panasonic Electronic Components

MOSFET 2N-CH 33V 5A WMINI8-F1

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 33V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: WMini8-F1
package: 8-SMD, Flat Lead
Voorraad7.360
Standard
33V
5A
38 mOhm @ 2.5A, 10V
2.5V @ 260µA
2.8nC @ 4.5V
220pF @ 10V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
WMini8-F1
hot VT6K1T2CR
Rohm Semiconductor

MOSFET 2N-CH 20V 0.1A VMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
  • Power - Max: 120mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: VMT6
package: 6-SMD, Flat Leads
Voorraad69.324
Logic Level Gate, 1.2V Drive
20V
100mA
3.5 Ohm @ 100mA, 4.5V
1V @ 100µA
-
7.1pF @ 10V
120mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
VMT6
hot SSM6N7002BFE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
package: SOT-563, SOT-666
Voorraad14.760.000
Logic Level Gate
60V
200mA
2.1 Ohm @ 500mA, 10V
3.1V @ 250µA
-
17pF @ 25V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
SSM6P49NU,LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 2-1Y1A

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
package: 6-WDFN Exposed Pad
Voorraad46.176
Logic Level Gate
20V
4A
45 mOhm @ 3.5A, 10V
1.2V @ 1mA
6.74nC @ 4.5V
480pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
SQJB48EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad8.850
-
40V
30A (Tc)
5.2mOhm @ 8A, 10V
3.3V @ 250µA
40nC @ 10V
2350pF @ 25V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
DMT3020LSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 16A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
  • Power - Max: 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Voorraad7.500
-
30V
16A (Tc)
20mOhm @ 9A, 10V
2.5V @ 250µA
7nC @ 10V
393pF @ 15V
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
HUF75637S3
Fairchild Semiconductor

MOSFET N-CH 100V 44A D2PAK

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MSCSM70VR1M10CTPAG
Microchip Technology

SIC 6N-CH 700V 238A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
  • Power - Max: 674W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Voorraad6
-
700V
238A (Tc)
9.5mOhm @ 80A, 20V
2.4V @ 8mA
430nC @ 20V
9000pF @ 700V
674W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
TSM6968SDCA
Taiwan Semiconductor Corporation

MOSFET 2N-CH 20V 6.5A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
  • Power - Max: 1.04W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: -
Request a Quote
-
20V
6.5A (Ta)
22mOhm @ 6.5A, 4.5V
1V @ 250µA
20nC @ 4.5V
950pF @ 10V
1.04W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
DMTH10H017LPDQ-13
Diodes Incorporated

MOSFET 2N-CH 100V 13A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
  • Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
  • Power - Max: 1.5W (Ta), 93W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type E)
package: -
Voorraad7.500
-
100V
13A (Ta), 59A (Tc)
17.4mOhm @ 17A, 10V
3V @ 250µA
28.6nC @ 10V
1986pF @ 50V
1.5W (Ta), 93W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type E)
IRF7506TR
Infineon Technologies

MOSFET 2P-CH 30V 1.7A MICRO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8™
package: -
Request a Quote
Logic Level Gate
30V
1.7A
270mOhm @ 1.2A, 10V
1V @ 250µA
11nC @ 10V
180pF @ 25V
1.25W
-
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8™
WAS310M17BM3
Wolfspeed, Inc.

SIC 1700V 310A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 310A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1700V (1.7kV)
310A
-
-
-
-
-
-
Chassis Mount
Module
-
SD5000N-PDIP-16L-ROHS
Linear Integrated Systems, Inc.

MOSFET 4N-CH 20V 0.05A 16DIP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
  • Rds On (Max) @ Id, Vgs: 70Ohm @ 1mA, 5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
package: -
Voorraad1.296
-
20V
50mA (Ta)
70Ohm @ 1mA, 5V
1.5V @ 1µA
-
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-DIP
FW340-M-TL-E-SY
Sanyo

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CAS350M12BM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 417A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 85mA
  • Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1200V (1.2kV)
417A (Tc)
5.2mOhm @ 350A, 15V
3.6V @ 85mA
844nC @ 15V
25700pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
SSM6N357R-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.65A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
package: -
Voorraad20.688
-
60V
650mA (Ta)
1.8Ohm @ 150mA, 5V
2V @ 1mA
1.5nC @ 5V
60pF @ 12V
1.5W (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
6-TSOP-F