Pagina 71 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  71/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot AON6918
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 15A/26.5A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
  • Power - Max: 2W, 2.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (5x6)
package: 8-WDFN Exposed Pad
Voorraad36.000
Logic Level Gate
25V
15A, 26.5A
5.2 mOhm @ 20A, 10V
2.3V @ 250µA
21nC @ 10V
1560pF @ 15V
2W, 2.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN-EP (5x6)
SP8M10FU6TB
Rohm Semiconductor

MOSFET N/P-CH 30V 7A/4.5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 4.5A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad7.696
Logic Level Gate
30V
7A, 4.5A
24 mOhm @ 7A, 10V
2.5V @ 1mA
11.8nC @ 5V
600pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
APTC60AM70T1G
Microsemi Corporation

MOSFET 2N-CH 600V 39A SP1

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
package: SP1
Voorraad3.328
Standard
600V
39A
70 mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
7000pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
hot AOP605
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8DIP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
package: 8-DIP (0.300", 7.62mm)
Voorraad10.380
Logic Level Gate
30V
-
28 mOhm @ 7.5A, 10V
3V @ 250µA
16.6nC @ 4.5V
820pF @ 15V
2.5W
-55°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot AON5802A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 7.2A 6-DFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1115pF @ 15V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: 6-DFN-EP (2x5)
package: 6-SMD, Flat Lead Exposed Pad
Voorraad231.312
Logic Level Gate
30V
7.2A
20 mOhm @ 7.2A, 4.5V
1.5V @ 250µA
10.7nC @ 4.5V
1115pF @ 15V
1.7W
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, Flat Lead Exposed Pad
6-DFN-EP (2x5)
APTM120A20SG
Microsemi Corporation

MOSFET 2N-CH 1200V 50A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
package: SP6
Voorraad5.136
Standard
1200V (1.2kV)
50A
240 mOhm @ 25A, 10V
5V @ 6mA
600nC @ 10V
15200pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
MTM684100LBF
Panasonic Electronic Components

MOSFET 2P-CH 12V 4.8A WMINI8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 1A, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -40°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: WMini8-F1
package: 8-SMD, Flat Lead
Voorraad3.344
Standard
12V
4.8A
42 mOhm @ 1A, 4V
1V @ 1mA
-
1200pF @ 10V
1W
-40°C ~ 85°C (TJ)
Surface Mount
8-SMD, Flat Lead
WMini8-F1
CSD85302L
Texas Instruments

MOSFET 2N-CH 20V 5A

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFLGA
  • Supplier Device Package: 4-Picostar (1.31x1.31)
package: 4-XFLGA
Voorraad3.376
Standard
-
-
-
-
7.8nC @ 4.5V
-
1.7W
-55°C ~ 150°C (TJ)
Surface Mount
4-XFLGA
4-Picostar (1.31x1.31)
hot NX7002BKS
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.24A 6TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 240mA
  • Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
  • Power - Max: 320mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
package: 6-TSSOP, SC-88, SOT-363
Voorraad62.400
Logic Level Gate
60V
240mA
2.8 Ohm @ 200mA, 10V
2.1V @ 250µA
1nC @ 10V
23.6pF @ 10V
320mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
hot SI1023X-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 0.37A SC89-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 370mA
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
package: SOT-563, SOT-666
Voorraad793.812
Logic Level Gate
20V
370mA
1.2 Ohm @ 350mA, 4.5V
450mV @ 250µA (Min)
1.5nC @ 4.5V
-
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
APTM50AM38STG
Microsemi Corporation

MOSFET 2N-CH 500V 90A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
package: SP4
Voorraad6.080
Standard
500V
90A
45 mOhm @ 45A, 10V
5V @ 5mA
246nC @ 10V
11200pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTMC120AM55CT1AG
Microsemi Corporation

MOSFET 2N-CH 1200V 55A SP1

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 55A
  • Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
package: SP1
Voorraad7.600
Standard
1200V (1.2kV)
55A
49 mOhm @ 40A, 20V
2.2V @ 2mA (Typ)
98nC @ 20V
1900pF @ 1000V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
hot IRF7314TRPBF
Infineon Technologies

MOSFET 2P-CH 20V 5.3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad2.090.124
Logic Level Gate
20V
5.3A
58 mOhm @ 2.9A, 4.5V
700mV @ 250µA
29nC @ 4.5V
780pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXMD63N02XTA
Diodes Incorporated

MOSFET 2N-CH 20V 2.5A 8-MSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Voorraad308.664
Logic Level Gate
20V
2.5A
130 mOhm @ 1.7A, 4.5V
3V @ 250µA
6nC @ 4.5V
700pF @ 15V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hot DMN2004VK-7
Diodes Incorporated

MOSFET 2N-CH 20V 0.54A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: SOT-563, SOT-666
Voorraad6.250.548
Logic Level Gate
20V
540mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
-
150pF @ 16V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot NTZD3155CT1G
ON Semiconductor

MOSFET N/P-CH 20V SOT-563

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: SOT-563, SOT-666
Voorraad9.856.656
Logic Level Gate
20V
540mA, 430mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
2.5nC @ 4.5V
150pF @ 16V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NXV10V160ST1
onsemi

3-PHASE AUTOMOTIVE POWER MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 50V
  • Power - Max: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 21-PowerDIP Module (1.370", 34.80mm)
  • Supplier Device Package: APM21-CGA
package: -
Request a Quote
-
100V
-
-
4.5V @ 250µA
101nC @ 10V
6970pF @ 50V
-
175°C (TJ)
Through Hole
21-PowerDIP Module (1.370", 34.80mm)
APM21-CGA
NVXR22S90M2SPB
onsemi

SIC 900V 6D MOSFET V-SSDC SPB

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 510A (Tj)
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 510A, 18V
  • Vgs(th) (Max) @ Id: 4.3V @ 150mA
  • Gate Charge (Qg) (Max) @ Vgs: 1800nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 400V
  • Power - Max: 900W (Tj)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SSDC39
package: -
Request a Quote
-
900V
510A (Tj)
2.7mOhm @ 510A, 18V
4.3V @ 150mA
1800nC @ 18V
35000pF @ 400V
900W (Tj)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SSDC39
AONR26309A
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6.5A/14A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
  • Power - Max: 1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN-EP (3x3)
package: -
Request a Quote
-
30V
6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc)
20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V
2.3V @ 250µA, 2.2V @ 250µA
20nC @ 10V
600pF @ 15V, 1100pF @ 15V
1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN-EP (3x3)
EFC2J004NUZTDG
onsemi

MOSFET NCH 12V WLCSP6 DUAL

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad15.000
-
-
-
-
-
-
-
-
-
-
-
-
RF1S17N06L
Harris Corporation

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMT2005UDV-13
Diodes Incorporated

MOSFET 2N-CH 24V 50A POWERDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
package: -
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24V
50A (Tc)
7mOhm @ 14A, 10V
1.5V @ 250µA
46.7nC @ 10V
2060pF @ 10V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)
SH63N65DM6AG
STMicroelectronics

MOSFET 2N-CH 650V 53A 9ACEPACK

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3344pF @ 100V
  • Power - Max: 424W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-ACEPACK SMIT
package: -
Voorraad138
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650V
53A (Tc)
64mOhm @ 23A, 10V
4.75V @ 250µA
80nC @ 10V
3344pF @ 100V
424W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
9-PowerSMD
9-ACEPACK SMIT
DMN62D2UDW-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT363 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
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60V
340mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
0.8nC @ 4.5V
41pF @ 30V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMC2053UVTQ-7
Diodes Incorporated

MOSFET N/P-CH 20V 4.6A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: -
Voorraad17.631
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20V
4.6A (Ta), 3.2A (Ta)
35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
1V @ 250µA
3.6nC @ 4.5V, 5.9nC @ 4.5V
369pF @ 10V, 440pF @ 10V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMN33D8LDWQ-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.25A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Voorraad9.000
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30V
250mA (Ta)
2.4Ohm @ 250mA, 10V
1.5V @ 100µA
1.23nC @ 10V
48pF @ 5V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
IRFN214BTA
Fairchild Semiconductor

MOSFET N-CH 250V

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
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SSFP3806
Good-Ark Semiconductor

MOSFET 2N-CH 30V 40A 8PPAK

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V
  • Power - Max: 46W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-PPAK (5x5.8)
package: -
Voorraad8.988
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30V
40A (Tc)
6.5mOhm @ 20A, 10V
2.5V @ 250µA
22nC @ 4.5V
1750pF @ 25V
46W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-PPAK (5x5.8)