Pagina 59 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  59/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF6150
Infineon Technologies

MOSFET 2P-CH 20V 7.9A FLIP-FET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.9A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 7.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-WFBGA
  • Supplier Device Package: 16-FlipFet?
package: 16-WFBGA
Voorraad7.872
Standard
20V
7.9A
36 mOhm @ 7.9A, 4.5V
1.2V @ 250µA
-
-
3W
-55°C ~ 150°C (TJ)
Surface Mount
16-WFBGA
16-FlipFet?
hot DMC3036LSD-13
Diodes Incorporated

MOSFET N/P-CH 30V 5A/4.5A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 431pF @ 15V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad1.323.240
Logic Level Gate
30V
5A, 4.5A
36 mOhm @ 6.9A, 10V
2.1V @ 250µA
7.9nC @ 10V
431pF @ 15V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FD6M045N06
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 60A EPM15

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 25V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: EPM15
  • Supplier Device Package: EPM15
package: EPM15
Voorraad3.920
Standard
60V
60A
4.5 mOhm @ 40A, 10V
4V @ 250µA
87nC @ 10V
3890pF @ 25V
-
-40°C ~ 150°C (TJ)
Through Hole
EPM15
EPM15
hot SI9926BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 6.2A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.14W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad1.274.280
Logic Level Gate
20V
6.2A
20 mOhm @ 8.2A, 4.5V
1.5V @ 250µA
20nC @ 4.5V
-
1.14W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI6981DQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 4.1A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad18.108
Logic Level Gate
20V
4.1A
31 mOhm @ 4.8A, 4.5V
900mV @ 300µA
25nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI1555DL-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V/8V SC70-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V, 8V
  • Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
  • Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
package: 6-TSSOP, SC-88, SOT-363
Voorraad406.824
Logic Level Gate
20V, 8V
660mA, 570mA
385 mOhm @ 660mA, 4.5V
1.4V @ 250µA
1.2nC @ 4.5V
-
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
APTC80DSK15T3G
Microsemi Corporation

MOSFET 2N-CH 800V 28A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 28A
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
  • Power - Max: 277W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
package: SP3
Voorraad4.432
Standard
800V
28A
150 mOhm @ 14A, 10V
3.9V @ 2mA
180nC @ 10V
4507pF @ 25V
277W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
LKK47-06C5
IXYS

MOSFET 2N-CH 600V 47A ISOPLUS264

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 47A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS264?
  • Supplier Device Package: ISOPLUS264?
package: ISOPLUS264?
Voorraad3.200
Super Junction
600V
47A
45 mOhm @ 44A, 10V
3.9V @ 3mA
190nC @ 10V
6800pF @ 100V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS264?
ISOPLUS264?
TPC8408,LQ(S
Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 6.1A/5.3A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.904
Logic Level Gate
40V
6.1A, 5.3A
32 mOhm @ 3.1A, 10V
2.3V @ 100µA
24nC @ 10V
850pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot ZXMP6A16DN8TC
Diodes Incorporated

MOSFET 2P-CH 60V 2.9A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad91.092
Standard
60V
2.9A
85 mOhm @ 2.9A, 10V
1V @ 250µA (Min)
24.2nC @ 10V
1021pF @ 30V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC3016LNS-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
  • Power - Max: 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
package: 8-PowerVDFN
Voorraad3.168
Standard
30V
9A (Ta), 6.8A (Ta)
16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
2V @ 250µA
9.5nC @ 4.5V
1184pF @ 15V, 1188pF @ 15V
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMN3032LFDB-13
Diodes Incorporated

MOSFET 2N-CH 30V 6.2A UDFN2020-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
package: 6-UDFN Exposed Pad
Voorraad2.176
Standard
30V
6.2A
30 mOhm @ 5.8A, 10V
2V @ 250µA
10.6nC @ 10V
500pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
PMCPB5530X,115
Nexperia USA Inc.

MOSFET N/P-CH 20V 6HUSON

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.4A
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 490mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
package: 6-UDFN Exposed Pad
Voorraad6.832
Logic Level Gate
20V
5.3A, 3.4A
34 mOhm @ 3A, 4.5V
900mV @ 250µA
21.7nC @ 4.5V
660pF @ 10V
490mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
hot STS5DNF60L
STMicroelectronics

MOSFET 2N-CH 60V 5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad38.472
Logic Level Gate
60V
5A
45 mOhm @ 2A, 10V
2.5V @ 250µA
15nC @ 4.5V
1030pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD310700PCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
package: 16-DIP (0.300", 7.62mm)
Voorraad5.088
Standard
8V
-
-
20mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
hot IRF7907TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 9.1A/11A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A
  • Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad103.440
Logic Level Gate
30V
9.1A, 11A
16.4 mOhm @ 9.1A, 10V
2.35V @ 25µA
10nC @ 4.5V
850pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDC6303N
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.68A SSOT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 680mA
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad61.560
Logic Level Gate
25V
680mA
450 mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3nC @ 4.5V
50pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
hot FDC6420C
Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 3A/2.2A SSOT-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A, 2.2A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad1.516.980
Logic Level Gate
20V
3A, 2.2A
70 mOhm @ 3A, 4.5V
1.5V @ 250µA
4.6nC @ 4.5V
324pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
HT8KE6TB1
Rohm Semiconductor

MOSFET 2N-CH 100V 4.5A 8HSMT

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc)
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
  • Power - Max: 2W (Ta), 14W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-HSMT (3.2x3)
package: -
Voorraad12.000
-
100V
4.5A (Ta), 13A (Tc)
57mOhm @ 4.5A, 10V
2.5V @ 1mA
6.7nC @ 10V
305pF @ 50V
2W (Ta), 14W (Tc)
150°C (TJ)
Surface Mount
8-PowerVDFN
8-HSMT (3.2x3)
CAS480M12HM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 640A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 640A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.97mOhm @ 480A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 160mA
  • Gate Charge (Qg) (Max) @ Vgs: 1590nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 43100pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Request a Quote
-
1200V (1.2kV)
640A (Tc)
2.97mOhm @ 480A, 15V
3.6V @ 160mA
1590nC @ 15V
43100pF @ 800V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module
SI9926DY
Fairchild Semiconductor

MOSFET 2N-CH 20V 6.5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
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-
20V
6.5A (Ta)
30mOhm @ 6.5A, 4.5V
1.5V @ 250µA
10nC @ 4.5V
700pF @ 10V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMC2025UFDBQ-13
Diodes Incorporated

MOSFET N/P-CH 20V 6A/3.5A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
package: -
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-
20V
6A (Ta), 3.5A (Ta)
25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
1V @ 250µA, 1.4V @ 250µA
12.3nC @ 10V, 15nC @ 8V
486pF @ 10V, 642pF @ 10V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
SI2124DW-TP
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
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-
20V
1.5A
90mOhm @ 1A, 4.5V
1.1V @ 250µA
3.6nC @ 4.5V
220pF @ 10V
150mW
-55°C ~ 150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
TSM250NB06DCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 7A/30A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
  • Power - Max: 2W (Ta), 48W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFN (5x6)
package: -
Voorraad36.942
-
60V
7A (Ta), 30A (Tc)
25mOhm @ 7A, 10V
4V @ 250µA
22nC @ 10V
1461pF @ 30V
2W (Ta), 48W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFN (5x6)
IRFHM8363TR2PBF
Infineon Technologies

MOSFET 2N-CH 30V 11A 8PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
  • Power - Max: 2.7W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
package: -
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Logic Level Gate
30V
11A
14.9mOhm @ 10A, 10V
2.35V @ 25µA
15nC @ 10V
1165pF @ 10V
2.7W
-
Surface Mount
8-PowerVDFN
8-PQFN-Dual (3.3x3.3)
MSCSM70TAM10CTPAG
Microchip Technology

SIC 6N-CH 700V 238A SP6-P

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
  • Power - Max: 674W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6-P
package: -
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-
700V
238A (Tc)
9.5mOhm @ 80A, 20V
2.4V @ 8mA
430nC @ 20V
9000pF @ 700V
674W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6-P
SIL3439K-TP
Micro Commercial Co

MOSFET N/P-CH 20V 1.3A SOT23-6L

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A, 1.1A
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 16V, 175pF @ 16V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
package: -
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Logic Level Gate
20V
1.3A, 1.1A
380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
1.1V @ 250µA
-
60pF @ 16V, 175pF @ 16V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L
CCB016M12GM3
Wolfspeed, Inc.

SIC, MODULE, 16M,1200V, 48 MM, G

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
  • Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
  • Vgs(th) (Max) @ Id: 3.9V @ 23mA
  • Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
  • Power - Max: 10mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Voorraad162
-
1200V (1.2kV)
50A (Tj)
20.8mOhm @ 50A, 15V
3.9V @ 23mA
236nC @ 15V
6700pF @ 1000V
10mW
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module