Pagina 50 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7338TRPBF
Infineon Technologies

MOSFET N/P-CH 12V 6.3A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad956.268
Logic Level Gate
12V
6.3A, 3A
34 mOhm @ 6A, 4.5V
1.5V @ 250µA
8.6nC @ 4.5V
640pF @ 9V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI1539DL-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V SC70-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
package: 6-TSSOP, SC-88, SOT-363
Voorraad172.176
Logic Level Gate
30V
540mA, 420mA
480 mOhm @ 590mA, 10V
2.6V @ 250µA
1.4nC @ 10V
-
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
HUF76407DK8T
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V SOP-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad7.328
Logic Level Gate
60V
-
90 mOhm @ 3.8A, 10V
3V @ 250µA
11.2nC @ 10V
330pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
UPA2690T1R-E2-AX
Renesas Electronics America

MOSFET N/P-CH 20V 4A/3A 6SON

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3A
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
  • Power - Max: 2.3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-HUSON (2x2)
package: 6-WFDFN Exposed Pad
Voorraad2.800
Logic Level Gate, 2.5V Drive
20V
4A, 3A
42 mOhm @ 2A, 4.5V
-
4.5nC @ 10V
330pF @ 10V
2.3W
150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
6-HUSON (2x2)
TSM6968SDCA RVG
TSC America Inc.

MOSFET, DUAL, N-CHANNEL, TRENCH,

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad3.504
Standard
20V
6.5A (Ta)
22 mOhm @ 6.5A, 4.5V
1V @ 250µA
15nC @ 4.5V
950pF @ 10V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
TSM250N02DCQ RFG
TSC America Inc.

MOSFET, DUAL, N-CHANNEL, TRENCH,

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
  • Power - Max: 620mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-TDFN (2x2)
package: 6-VDFN Exposed Pad
Voorraad3.536
Standard
20V
5.8A (Tc)
25 mOhm @ 4A, 4.5V
800mV @ 250µA
7.7nC @ 4.5V
775pF @ 10V
620mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-TDFN (2x2)
STL66DN3LLH5
STMicroelectronics

MOSFET 2N-CH 30V 78.5A PWRFLAT56

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 78.5A
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Power - Max: 72W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat? (5x6)
package: 8-PowerVDFN
Voorraad2.528
Logic Level Gate
30V
78.5A
6.5 mOhm @ 10A, 10V
3V @ 250µA
12nC @ 4.5V
1500pF @ 25V
72W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerFlat? (5x6)
hot DMC6040SSD-13
Diodes Incorporated

MOSFET N/P-CH 60V 5.1A/3.1A 8-SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.1A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
  • Power - Max: 1.24W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad690.000
Logic Level Gate
60V
5.1A, 3.1A
40 mOhm @ 8A, 10V
3V @ 250µA
20.8nC @ 10V
1130pF @ 15V
1.24W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD110908APAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
  • Vgs(th) (Max) @ Id: 810mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
package: 8-DIP (0.300", 7.62mm)
Voorraad6.660
Standard
10.6V
12mA, 3mA
500 Ohm @ 4.8V
810mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
TPD3215M
Transphorm

CASCODE GAN HB 600V 70A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 30A, 8V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
  • Power - Max: 470W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: Module
  • Supplier Device Package: Module
package: Module
Voorraad5.616
GaNFET (Gallium Nitride)
600V
70A (Tc)
34 mOhm @ 30A, 8V
-
28nC @ 8V
2260pF @ 100V
470W
-40°C ~ 150°C (TJ)
Through Hole
Module
Module
AUIRF7309QTR
Infineon Technologies

MOSFET N/P-CH 30V 4A/3A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.608
Logic Level Gate
30V
4A, 3A
50 mOhm @ 2.4A, 10V
3V @ 250µA
25nC @ 4.5V
520pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7503TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 2.4A MICRO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Voorraad91.512
Logic Level Gate
30V
2.4A
135 mOhm @ 1.7A, 10V
1V @ 250µA
12nC @ 10V
210pF @ 25V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8?
UT6MA3TCR
Rohm Semiconductor

20V NCH+PCH MIDDLE POWER MOSFET

  • FET Type: N and P-Channel
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: HUML2020L8
package: 6-UDFN Exposed Pad
Voorraad5.184
-
20V
5A, 5.5A
59 mOhm @ 5A, 4.5V
1.5V @ 1mA
6.5nC @ 4.5V
460pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
HUML2020L8
CSD75208W1015T
Texas Instruments

MOSFET 2P-CH 20V 1.6A 6WLP

  • FET Type: 2 P-Channel (Dual) Common Source
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
  • Power - Max: 750mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFBGA, DSBGA
  • Supplier Device Package: 6-DSBGA
package: 6-UFBGA, DSBGA
Voorraad12.030
Logic Level Gate
20V
1.6A
68 mOhm @ 1A, 4.5V
1.1V @ 250µA
2.5nC @ 4.5V
410pF @ 10V
750mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFBGA, DSBGA
6-DSBGA
SLA5085
Sanken

MOSFET 5N-CH 60V 10A 12-SIP

  • FET Type: 5 N-Channel, Common Source
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 3A, 4V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
  • Power - Max: 5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
package: 12-SIP, Exposed Tab
Voorraad8.436
Logic Level Gate
60V
10A
220 mOhm @ 3A, 4V
2V @ 250µA
-
320pF @ 10V
5W
150°C (TJ)
Through Hole
12-SIP, Exposed Tab
12-SIP
hot SI4204DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 19.8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 19.8A
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
  • Power - Max: 3.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad30.000
Standard
20V
19.8A
4.6 mOhm @ 10A, 10V
2.4V @ 250µA
45nC @ 10V
2110pF @ 10V
3.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDMC0228
Fairchild Semiconductor

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
UPA1873GR-9JG-E1-A
Renesas Electronics Corporation

MOSFET 2N-CH 20V 6A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: -
Request a Quote
Logic Level Gate
20V
6A
23mOhm @ 3A, 4.5V
1.5V @ 1mA
9nC @ 4V
705pF @ 10V
2W
-
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
DMP4025LSDQ-13
Diodes Incorporated

MOSFET 2P-CH 40V 5.8A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Voorraad7.500
-
40V
5.8A (Ta)
25mOhm @ 3A, 10V
1.8V @ 250µA
33.7nC @ 10V
1640pF @ 20V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
UT6MB5TCR
Rohm Semiconductor

MOSFET 40V 5A/3.5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
package: -
Voorraad8.970
-
40V
5A (Ta), 3.5A (Tc)
48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V
2.5V @ 1mA
-
-
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
DMC2053UVT-13
Diodes Incorporated

MOSFET N/P-CH 20V 4.6A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: -
Voorraad53.334
-
20V
4.6A (Ta), 3.2A (Ta)
35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
1V @ 250µA
3.6nC @ 4.5V, 5.9nC @ 4.5V
369pF @ 10V, 440pF @ 10V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMT47M2LDV-13
Diodes Incorporated

MOSFET 2N-CH 40V 11.9A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
  • Power - Max: 2.34W (Ta), 14.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
package: -
Request a Quote
-
40V
11.9A (Ta), 30.2A (Tc)
10.8mOhm @ 20A, 10V
2.3V @ 250µA
14nC @ 10V
891pF @ 20V
2.34W (Ta), 14.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)
FDPF9N50NZ-FS
Fairchild Semiconductor

MOSFET N-CH 500V

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SCH2819-TL-H
onsemi

NCH+SBD 2.5V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DI038N04PQ2-AQ
Diotec Semiconductor

MOSFET POWERQFN 5X6-DUAL N+N 45V

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
  • Power - Max: 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
package: -
Request a Quote
-
45V
38A (Tc)
12mOhm @ 10A, 10V
2.5V @ 250µA
14nC @ 10V
830pF @ 30V
31W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
SSF2145CH6
Good-Ark Semiconductor

MOSFET 20V 4.8A/2.9A 6TSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
package: -
Voorraad18.000
-
20V
4.8A (Tc), 2.9A (Tc)
55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
1V @ 250µA
-
420pF @ 10V
1.7W
-55°C ~ 150°C
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
TPS2013APWR
Texas Instruments

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMN3012LFG-13
Diodes Incorporated

MOSFET 2N-CH 30V 20A POWERDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
  • Power - Max: 2.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8 (Type D)
package: -
Request a Quote
-
30V
20A (Tc)
12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
2.1V @ 250µA, 1.15V @ 250µA
6.1nC @ 4.5V, 12.6nC @ 4.5V
850pF @ 15V, 1480pF @ 15V
2.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
PowerDI3333-8 (Type D)