Pagina 43 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  43/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF6702M2DTRPBF
Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
  • Power - Max: 2.7W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DirectFET? Isometric MA
  • Supplier Device Package: DIRECTFET? MA
package: DirectFET? Isometric MA
Voorraad6.048
Logic Level Gate
30V
15A
6.6 mOhm @ 15A, 10V
2.35V @ 25µA
14nC @ 4.5V
1380pF @ 15V
2.7W
-55°C ~ 175°C (TJ)
Surface Mount
DirectFET? Isometric MA
DIRECTFET? MA
AO4806L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 9.4A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad7.872
Logic Level Gate
20V
-
14 mOhm @ 9.4A, 10V
1V @ 250µA
17.9nC @ 4.5V
1810pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI1988DH-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SC-70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
package: 6-TSSOP, SC-88, SOT-363
Voorraad414.300
Logic Level Gate
20V
1.3A
168 mOhm @ 1.4A, 4.5V
1V @ 250µA
4.1nC @ 8V
110pF @ 10V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
hot FDW2601NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 8.2A 8TSSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 15V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad120.360
Logic Level Gate
30V
8.2A
15 mOhm @ 8.2A, 4.5V
1.5V @ 250µA
30nC @ 4.5V
1840pF @ 15V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
BSC0910NDIATMA1
Infineon Technologies

MOSFET 2N-CH 25V 16A/31A TISON8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 11A, 31A
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TISON-8
package: 8-PowerTDFN
Voorraad3.136
Logic Level Gate, 4.5V Drive
25V
11A, 31A
4.6 mOhm @ 25A, 10V
2V @ 250µA
6.6nC @ 4.5V
4500pF @ 12V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PG-TISON-8
SIA915DJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 4.5A SC-70-6L

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
  • Power - Max: 6.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
package: PowerPAK? SC-70-6 Dual
Voorraad4.080
Logic Level Gate
30V
4.5A
87 mOhm @ 2.9A, 10V
2.2V @ 250µA
9nC @ 10V
275pF @ 15V
6.5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
VEC2616-TL-W
ON Semiconductor

MOSFET N/P-CH 60V 3A/2.5A VEC8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/VEC8
package: 8-SMD, Flat Lead
Voorraad6.832
Logic Level Gate, 4V Drive
60V
3A, 2.5A
80 mOhm @ 1.5A, 10V
2.6V @ 1mA
10nC @ 10V
505pF @ 20V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
SOT-28FL/VEC8
hot IRF9389TRPBF
Infineon Technologies

MOSFET N/P-CH 30V 6.8A/4.6A 8-SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad380.244
Logic Level Gate
30V
6.8A, 4.6A
27 mOhm @ 6.8A, 10V
2.3V @ 10µA
14nC @ 10V
398pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD310702ASCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 180mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
package: 16-SOIC (0.154", 3.90mm Width)
Voorraad7.312
Standard
8V
-
-
180mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
SH8M5TB1
Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A SOP8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 7A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.168
Logic Level Gate
30V
6A, 7A
30 mOhm @ 6A, 10V
2.5V @ 1mA
7.2nC @ 5V
520pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot FDMS3669S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/18A PWR56

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A, 18A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: Power56
package: 8-PowerTDFN
Voorraad29.940
Logic Level Gate
30V
13A, 18A
10 mOhm @ 13A, 10V
2.7V @ 250µA
24nC @ 10V
1605pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
Power56
DMN2028UFU-7
Diodes Incorporated

MOSFET 2N-CH 20V 7.5A UDFN2030-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
package: 6-UFDFN Exposed Pad
Voorraad6.896
Standard
20V
7.5A
20.2 mOhm @ 4.5A, 4.5V
1V @ 250µA
18.4nC @ 8V
887pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6 (Type B)
SIZ790DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 16A 6-POWERPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A, 35A
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
  • Power - Max: 27W, 48W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerPair?
  • Supplier Device Package: 6-PowerPair?
package: 6-PowerPair?
Voorraad29.772
Logic Level Gate
30V
16A, 35A
9.3 mOhm @ 15A, 10V
2.2V @ 250µA
24nC @ 10V
830pF @ 15V
27W, 48W
-55°C ~ 150°C (TJ)
Surface Mount
6-PowerPair?
6-PowerPair?
STS8DN6LF6AG
STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad23.898
Logic Level Gate
60V
8A (Ta)
24 mOhm @ 4A, 10V
2.5V @ 250µA
27nC @ 10V
1340pF @ 25V
3.2W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMN2300UFL4-7
Diodes Incorporated

MOSFET 2N-CH 20V 2.11A 6DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.11A
  • Rds On (Max) @ Id, Vgs: 195 mOhm @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V
  • Power - Max: 530mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: X2-DFN1310-6
package: 6-XFDFN Exposed Pad
Voorraad169.110
Logic Level Gate
20V
2.11A
195 mOhm @ 300mA, 4.5V
950mV @ 250µA
1.6nC @ 4.5V
64.3pF @ 25V
530mW
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
X2-DFN1310-6
G1K2C10S2
Goford Semiconductor

MOSFET 100V 3A/3.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
  • Power - Max: 2W (Tc), 3.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad12.000
-
100V
3A (Tc), 3.5A (Tc)
130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
2.5V @ 250µA
22nC @ 10V, 23nC @ 10V
668pF @ 50V, 1732pF @ 50V
2W (Tc), 3.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN2025UFDB-7
Diodes Incorporated

MOSFET 2N-CH 20V 6A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
package: -
Request a Quote
-
20V
6A (Ta)
25mOhm @ 4A, 4.5V
1V @ 250µA
12.3nC @ 10V
486pF @ 10V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
SSFN3010H
Good-Ark Semiconductor

MOSFET, N-CH, DUAL, 19.50A, 30V,

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN (3x3)
package: -
Voorraad27.000
-
30V
10.8A (Ta), 19.5A (Tc)
10.5mOhm @ 10A, 10V
2.5V @ 250µA
31nC @ 10V
900pF @ 25V
27W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN (3x3)
NVMFD5C478NLT1G
onsemi

MOSFET 2N-CH 40V 10.5A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
  • Power - Max: 3.1W (Ta), 23W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
package: -
Voorraad4.500
-
40V
10.5A (Ta), 29A (Tc)
14.5mOhm @ 7.5A, 10V
2.2V @ 20µA
8.1nC @ 10V
420pF @ 25V
3.1W (Ta), 23W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
G200P04S2
Goford Semiconductor

MOSFET 2P-CH 40V 9A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2365pF @ 20V
  • Power - Max: 2.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad7.497
-
40V
9A (Tc)
20mOhm @ 7A, 10V
2.5V @ 250µA
42nC @ 10V
2365pF @ 20V
2.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN2710UVQ-13
Diodes Incorporated

MOSFET 2N-CH 20V 0.92A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 920mA (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Voorraad29.550
-
20V
920mA (Ta)
450mOhm @ 600mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V
42pF @ 16V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
IRF7105QTRPBF
Infineon Technologies

MOSFET N/P-CH 25V 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Request a Quote
-
25V
3.5A, 2.3A
100mOhm @ 1A, 10V
3V @ 250µA
27nC @ 10V
330pF @ 15V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
PMDPB30XNZ
Nexperia USA Inc.

MOSFET 2N-CH 20V 4A 6HUSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 490mW (Ta), 8.33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: 6-HUSON (2x2)
package: -
Voorraad14.370
-
20V
4A (Ta)
40mOhm @ 3A, 4.5V
900mV @ 250µA
-
660pF @ 10V
490mW (Ta), 8.33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
6-HUSON (2x2)
NXH020F120MNF1PTG
onsemi

SIC 4N-CH 1200V 51A 22PIM

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
  • Power - Max: 119W (Tj)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 22-PIM (33.8x42.5)
package: -
Request a Quote
-
1200V (1.2kV)
51A (Tc)
30mOhm @ 50A, 20V
4.3V @ 20mA
213.5nC @ 20V
2420pF @ 800V
119W (Tj)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
22-PIM (33.8x42.5)
SIL2623A-TP
Micro Commercial Co

MOSFET 2P-CH 30V 3A SOT23-6L

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
package: -
Voorraad26.025
-
30V
3A
90mOhm @ 3A, 10V
2.5V @ 250µA
7.5nC @ 15V
365pF @ 10V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L
SQ4949EY-T1_GE3
Vishay Siliconix

MOSFET 2P-CH 30V 7.5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
  • Power - Max: 3.3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad138.447
-
30V
7.5A (Tc)
35mOhm @ 5.9A, 10V
2.5V @ 250µA
30nC @ 10V
1020pF @ 25V
3.3W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MSCSM120AM042T6AG
Microchip Technology

SIC 2N-CH 1200V 495A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 18mA
  • Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
  • Power - Max: 2.031kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1200V (1.2kV)
495A (Tc)
5.2mOhm @ 240A, 20V
2.8V @ 18mA
1392nC @ 20V
18100pF @ 1000V
2.031kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
SQJ570EP-T1_BE3
Vishay Siliconix

MOSFET N/P-CH 100V 15A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V, 650pF @ 25V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad9.000
-
100V
15A (Tc), 9.5A (Tc)
45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
2.5V @ 250µA
15nC @ 10V, 20nC @ 10V
600pF @ 25V, 650pF @ 25V
27W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual