Pagina 24 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  24/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AO4613_001
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.624
Logic Level Gate
30V
-
24 mOhm @ 7.2A, 10V
3V @ 250µA
15nC @ 10V
630pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ECH8667-TL-HX
ON Semiconductor

MOSFET 2P-CH 30V 5.5A ECH8

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
package: 8-SMD, Flat Lead
Voorraad5.664
-
-
-
-
-
-
-
-
-
Surface Mount
8-SMD, Flat Lead
8-ECH
hot SI4947ADY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 30V 3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad1.763.292
Logic Level Gate
30V
3A
80 mOhm @ 3.9A, 10V
1V @ 250µA (Min)
8nC @ 5V
-
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD1115MAL
Advanced Linear Devices Inc.

MOSFET N/P-CH 10.6V 8MSOP

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Voorraad2.448
Standard
10.6V
-
1800 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
EPC2107ENGRT
EPC

TRANS GAN 3N-CH 100V BUMPED DIE

  • FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
  • Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-VFBGA
  • Supplier Device Package: 9-BGA (1.35x1.35)
package: 9-VFBGA
Voorraad4.496
GaNFET (Gallium Nitride)
100V
1.7A, 500mA
320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
2.5V @ 100µA, 2.5V @ 20µA
0.16nC @ 5V, 0.044nC @ 5V
16pF @ 50V, 7pF @ 50V
-
-40°C ~ 150°C (TJ)
Surface Mount
9-VFBGA
9-BGA (1.35x1.35)
NVMFD5875NLT3G
ON Semiconductor

MOSFET 2N-CH 60V 7A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
package: 8-PowerTDFN
Voorraad6.496
Logic Level Gate
60V
7A
33 mOhm @ 7.5A, 10V
3V @ 250µA
20nC @ 10V
540pF @ 25V
3.2W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
hot AO6802
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 3.5A 6-TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
package: SC-74, SOT-457
Voorraad403.212
Logic Level Gate
30V
3.5A
50 mOhm @ 3.5A, 10V
2.5V @ 250µA
5nC @ 10V
210pF @ 15V
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
SIZ728DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 25V 16A 6-POWERPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 16A, 35A
  • Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V
  • Power - Max: 27W, 48W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerPair?
  • Supplier Device Package: 6-PowerPair?
package: 6-PowerPair?
Voorraad3.504
Logic Level Gate
25V
16A, 35A
7.7 mOhm @ 18A, 10V
2.2V @ 250µA
26nC @ 10V
890pF @ 12.5V
27W, 48W
-55°C ~ 150°C (TJ)
Surface Mount
6-PowerPair?
6-PowerPair?
hot DMC2400UV-7
Diodes Incorporated

MOSFET N/P-CH 20V SOT563

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: SOT-563, SOT-666
Voorraad35.640
Logic Level Gate
20V
1.03A, 700mA
480 mOhm @ 200mA, 5V
900mV @ 250µA
0.5nC @ 4.5V
37.1pF @ 10V
450mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
AUIRF7313QTR
Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.360
Logic Level Gate
30V
6.9A
29 mOhm @ 6.9A, 10V
3V @ 250µA
33nC @ 10V
755pF @ 25V
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF9953TRPBF
Infineon Technologies

MOSFET 2P-CH 30V 2.3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad518.340
Standard
30V
2.3A
250 mOhm @ 1A, 10V
1V @ 250µA
12nC @ 10V
190pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI3552DV-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V 6TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
package: SOT-23-6 Thin, TSOT-23-6
Voorraad174.708
Logic Level Gate
30V
-
105 mOhm @ 2.5A, 10V
1V @ 250µA (Min)
3.2nC @ 5V
-
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
RFD14N05S2515
Harris Corporation

MOSFET N-CH 50V 14A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
BSC150N03LDGATMA1
Infineon Technologies

MOSFET 2N-CH 30V 8A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
  • Power - Max: 26W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
package: -
Voorraad152.103
Logic Level Gate
30V
8A
15mOhm @ 20A, 10V
2.2V @ 250µA
13.2nC @ 10V
1100pF @ 15V
26W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
US5K3TR
Rohm Semiconductor

MOSFET 2N-CH 30V 1.5A TUMT5

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SQJ260EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 20A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V
  • Power - Max: 27W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
package: -
Voorraad8.994
-
60V
20A (Tc), 54A (Tc)
19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
2.5V @ 250µA
20nC @ 10V, 40nC @ 10V
1100pF @ 25V, 2500pF @ 25V
27W (Tc), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual Asymmetric
NVMJD027N10MCLTWG
onsemi

PTNG 100V N-CH LL IN LFPAK56 DUA

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 38µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V
  • Power - Max: 3.1W (Ta), 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: 8-LFPAK
package: -
Request a Quote
-
100V
7.4A (Ta), 28A (Tc)
26mOhm @ 7A, 10V
3V @ 38µA
9.9nC @ 10V
697pF @ 50V
3.1W (Ta), 46W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
8-LFPAK
AON5816
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 12A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 10V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-DFN-EP (2x5)
package: -
Request a Quote
-
20V
12A (Ta)
6.5mOhm @ 12A, 4.5V
1.3V @ 250µA
35nC @ 4.5V
2170pF @ 10V
1.7W
-55°C ~ 150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
6-DFN-EP (2x5)
SI6953DQ
Fairchild Semiconductor

MOSFET 2P-CH 20V 1.9A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 1.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 218pF @ 10V
  • Power - Max: 600mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: -
Request a Quote
-
20V
1.9A (Ta)
170mOhm @ 1.9A, 10V
3V @ 250µA
10nC @ 10V
218pF @ 10V
600mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SSM6L807R-LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 4A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
package: -
Voorraad18.000
-
30V
4A (Ta)
39.1mOhm @ 2A, 4.5V
1V @ 1mA
3.2nC @ 4.5V, 6.74nC @ 4.5V
310pF @ 15V, 480pF @ 10V
1.4W (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
6-TSOP-F
IQE008N03LM5CGSCATMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerWDFN
  • Supplier Device Package: PG-WHTFN-9
package: -
Request a Quote
-
30V
-
-
-
-
-
-
-
Surface Mount
9-PowerWDFN
PG-WHTFN-9
CMLDM8002AG-TR-PBFREE
Central Semiconductor Corp

MOSFET 2P-CH 50V 0.28A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Voorraad8.073
Logic Level Gate
50V
280mA
2.5Ohm @ 500mA, 10V
2.5V @ 250µA
0.72nC @ 4.5V
70pF @ 25V
350mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NVMFD5C674NLT1G
onsemi

MOSFET 2N-CH 60V 11A/42A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
  • Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Power - Max: 3W (Ta), 37W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
package: -
Voorraad4.302
-
60V
11A (Ta), 42A (Tc)
14.4mOhm @ 10A, 10V
2.2V @ 25µA
4.7nC @ 4.5V
640pF @ 25V
3W (Ta), 37W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
AO6601L
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 3.4A 6TSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V, 135mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.34nC @ 4.5V, 4.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 15V, 409pF @ 15V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
package: -
Request a Quote
-
30V
3.4A (Ta), 2.3A (Ta)
60mOhm @ 3A, 10V, 135mOhm @ 2.3A, 10V
1.4V @ 250µA
4.34nC @ 4.5V, 4.8nC @ 4.5V
390pF @ 15V, 409pF @ 15V
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
MSCSM120TLM31C3AG
Microchip Technology

SIC 4N-CH 1200V 89A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 395W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
package: -
Request a Quote
-
1200V (1.2kV)
89A (Tc)
31mOhm @ 40A, 20V
2.8V @ 1mA
232nC @ 20V
3020pF @ 1000V
395W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
DMP2075UFDB-13
Diodes Incorporated

MOSFET 2P-CH 20V 3.8A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
package: -
Request a Quote
-
20V
3.8A (Ta)
75mOhm @ 2.9A, 4.5V
1.4V @ 250µA
8.8nC @ 4.5V
642pF @ 10V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
SQJ912AEP-T2_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Request a Quote
-
40V
30A (Tc)
9.3mOhm @ 9.7A, 10V
2.5V @ 250µA
38nC @ 10V
1835pF @ 20V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
IRF7306QTRPBF
Infineon Technologies

MOSFET 2P-CH 30V 3.6A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Request a Quote
-
30V
3.6A
100mOhm @ 1.8A, 10V
1V @ 250µA
25nC @ 10V
440pF @ 25V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO