Pagina 194 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  194/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
QJD1210SA1
Powerex Inc.

MOSFET 2N-CH 1200V 100A SIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 100A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V
  • Vgs(th) (Max) @ Id: 1.6V @ 34mA
  • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 10V
  • Power - Max: 520W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: Module
Voorraad4.992
Standard
1200V (1.2kV)
100A
17 mOhm @ 100A, 15V
1.6V @ 34mA
330nC @ 15V
8200pF @ 10V
520W
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
hot AO6801A
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 2.3A 6TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 15V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
package: SC-74, SOT-457
Voorraad454.248
Logic Level Gate
30V
2.3A
115 mOhm @ 2.3A, 10V
1.4V @ 250µA
7nC @ 10V
315pF @ 15V
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
hot SI6966DQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad390.384
Logic Level Gate
20V
4A
30 mOhm @ 4.5A, 4.5V
1.4V @ 250µA
20nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SI4230DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.536
Logic Level Gate
30V
8A
20.5 mOhm @ 8A, 10V
3V @ 250µA
25nC @ 10V
950pF @ 15V
3.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDW9926A
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 4.5A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
  • Power - Max: 600mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad513.732
Logic Level Gate
20V
4.5A
32 mOhm @ 4.5A, 4.5V
1.5V @ 250µA
9nC @ 4.5V
630pF @ 10V
600mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot NTJD4401NT1
ON Semiconductor

MOSFET 2N-CH 20V 0.63A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 630mA
  • Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad15.828
Logic Level Gate
20V
630mA
375 mOhm @ 630mA, 4.5V
1.5V @ 250µA
3nC @ 4.5V
46pF @ 20V
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
NTL4502NT1
ON Semiconductor

MOSFET 4N-CH 24V 11.4A 16PIN

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 11.4A
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 20V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-PowerQFN
  • Supplier Device Package: PlnPAK
package: 16-PowerQFN
Voorraad7.664
Logic Level Gate
24V
11.4A
11 mOhm @ 15A, 10V
2V @ 250µA
13nC @ 4.5V
1605pF @ 20V
1.7W
-55°C ~ 150°C (TJ)
Surface Mount
16-PowerQFN
PlnPAK
hot NDS9947
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.5A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad205.848
Logic Level Gate
20V
3.5A
100 mOhm @ 3.5A, 10V
3V @ 250µA
13nC @ 10V
542pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTC60AM35T1G
Microsemi Corporation

MOSFET 2N-CH 600V 72A SP1

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 72A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Power - Max: 416W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
package: SP1
Voorraad2.832
Standard
600V
72A
35 mOhm @ 72A, 10V
3.9V @ 5.4mA
518nC @ 10V
14000pF @ 25V
416W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
BUK7K134-100EX
Nexperia USA Inc.

MOSFET 2N-CH 100V 9.8A LFPAK56

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9.8A
  • Rds On (Max) @ Id, Vgs: 121 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 25V
  • Power - Max: 32W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
package: SOT-1205, 8-LFPAK56
Voorraad3.568
Standard
100V
9.8A
121 mOhm @ 5A, 10V
4V @ 1mA
10.5nC @ 10V
564pF @ 25V
32W
-
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
FDMS3606AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/27A PWR56

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A, 27A
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: Power56
package: 8-PowerTDFN
Voorraad6.224
Logic Level Gate
30V
13A, 27A
8 mOhm @ 13A, 10V
2.7V @ 250µA
29nC @ 10V
1695pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
Power56
DMC25D1UVT-7
Diodes Incorporated

MOSFET N/P-CH 25V/12V TSOT26

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V, 12V
  • Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: SOT-23-6 Thin, TSOT-23-6
Voorraad6.704
Standard
25V, 12V
500mA, 3.9A
4 Ohm @ 400mA, 4.5V
1.5V @ 250µA
0.9nC @ 10V
27.6pF @ 10V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
hot DMC3025LSD-13
Diodes Incorporated

MOSFET N/P-CH 30V 6.5A/4.2A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.4A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad218.472
Logic Level Gate
30V
6.5A, 4.2A
20 mOhm @ 7.4A, 10V
2V @ 250µA
9.8nC @ 10V
501pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDY4000CZ
Fairchild/ON Semiconductor

MOSFET N/P-CH 20V SC89-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA, 350mA
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
  • Power - Max: 446mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
package: SOT-563, SOT-666
Voorraad6.560
Logic Level Gate
20V
600mA, 350mA
700 mOhm @ 600mA, 4.5V
1.5V @ 250µA
1.1nC @ 4.5V
60pF @ 10V
446mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
DI048N04PQ2-AQ
Diotec Semiconductor

MOSFET, POWERQFN 5X6, 40V, 48A,

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: TDSON-8-4
package: -
Voorraad15.000
-
40V
48A (Tc)
9.6mOhm @ 12A, 10V
2.5V @ 250µA
48nC @ 10V
2270pF @ 20V
27W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
TDSON-8-4
CSD86336Q3DT
Texas Instruments

MOSFET 2N-CH 25V 20A 8VSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 5V Drive
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V
  • Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V
  • Power - Max: 6W
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-VSON (3.3x3.3)
package: -
Voorraad3
Logic Level Gate, 5V Drive
25V
20A (Ta)
9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
1.9V @ 250µA, 1.6V @ 250µA
3.8nC @ 45V, 7.4nC @ 45V
494pF @ 12.5V, 970pF @ 12.5V
6W
-55°C ~ 125°C
Surface Mount
8-PowerTDFN
8-VSON (3.3x3.3)
IQE220N15NM5CGSCATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerWDFN
  • Supplier Device Package: PG-WHTFN-9
package: -
Request a Quote
-
150V
-
-
-
-
-
-
-
Surface Mount
9-PowerWDFN
PG-WHTFN-9
DMP31D7LVQ-7
Diodes Incorporated

MOSFET 2P-CH 30V 0.62A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Voorraad8.220
-
30V
620mA (Ta)
900mOhm @ 420mA, 10V
2.6V @ 250µA
0.8nC @ 10V
19pF @ 15V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
SI5980DU-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 100V 2.5A CHIPFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 567mOhm @ 400mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 50V
  • Power - Max: 7.8W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® ChipFET™ Dual
  • Supplier Device Package: PowerPAK® ChipFet Dual
package: -
Request a Quote
-
100V
2.5A
567mOhm @ 400mA, 10V
4V @ 250µA
3.3nC @ 10V
78pF @ 50V
7.8W
-
Surface Mount
PowerPAK® ChipFET™ Dual
PowerPAK® ChipFet Dual
SQJ910AEP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad8.910
-
30V
30A (Tc)
7mOhm @ 12A, 10V
2.5V @ 250µA
39nC @ 10V
1869pF @ 15V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
PJQ5844-AU_R2_000A1
Panjit International Inc.

MOSFET 2N-CH 40V 10A/45A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V
  • Power - Max: 2W (Ta), 38.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8
package: -
Request a Quote
-
40V
10A (Ta), 45A (Tc)
8mOhm @ 15A, 10V
2.5V @ 250µA
17nC @ 4.5V
1759pF @ 25V
2W (Ta), 38.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
DFN5060B-8
SQJ844AEP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad9.000
-
30V
8A (Tc)
16.6mOhm @ 7.6A, 10V
2.5V @ 250µA
26nC @ 10V
1161pF @ 15V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJ914EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad9.000
-
30V
30A (Tc)
12mOhm @ 4.5A, 10V
2.5V @ 250µA
25nC @ 10V
1110pF @ 15V
27W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
RF1K4909396
Fairchild Semiconductor

MOSFET 2P-CH 12V 2.5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
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Logic Level Gate
12V
2.5A (Ta)
130mOhm @ 2.5A, 5V
2V @ 250µA
24nC @ 10V
775pF @ 10V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AOCA33104E
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 30A 10DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-AlphaDFN (2.98x1.49)
package: -
Request a Quote
-
12V
30A (Ta)
2.8mOhm @ 5A, 4.5V
1.2V @ 250µA
36nC @ 4.5V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
10-SMD, No Lead
10-AlphaDFN (2.98x1.49)
EPC2221
EPC

GANFET 2N-CH 100V 5A DIE

  • FET Type: GaNFET (Gallium Nitride)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
package: -
Voorraad15.519
-
100V
5A
-
-
-
-
-
150°C (TJ)
Surface Mount
Die
Die
DMN52D0UVA-13
Diodes Incorporated

MOSFET 2N-CH 50V 0.48A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
  • Power - Max: 480mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Voorraad30.000
-
50V
480mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
1.5nC @ 10V
39pF @ 25V
480mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
MSCSM170HM12CAG
Microchip Technology

SIC 4N-CH 1700V 179A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
  • Power - Max: 843W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Voorraad39
-
1700V (1.7kV)
179A (Tc)
15mOhm @ 90A, 20V
3.2V @ 7.5mA
534nC @ 20V
9900pF @ 1000V
843W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-