Pagina 185 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  185/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSL314PEL6327HTSA1
Infineon Technologies

MOSFET 2P-CH 30V 1.5A 6TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 6.3µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad6.848
Logic Level Gate
30V
1.5A
140 mOhm @ 1.5A, 10V
2V @ 6.3µA
2.9nC @ 10V
294pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
hot IRF7379
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad182.868
Standard
30V
5.8A, 4.3A
45 mOhm @ 5.8A, 10V
1V @ 250µA
25nC @ 10V
520pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM20DHM16TG
Microsemi Corporation

MOSFET 2N-CH 200V 104A SP4

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 104A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
package: SP4
Voorraad4.016
Standard
200V
104A
19 mOhm @ 52A, 10V
5V @ 2.5mA
140nC @ 10V
7220pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot IRFHM792TRPBF
Infineon Technologies

MOSFET 2N-CH 100V 2.3A 8PQFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
package: 8-PowerVDFN
Voorraad167.280
Standard
100V
2.3A
195 mOhm @ 2.9A, 10V
4V @ 10µA
6.3nC @ 10V
251pF @ 25V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-PQFN (3.3x3.3), Power33
APTMC60TLM14CAG
Microsemi Corporation

MOSFET 4N-CH 1200V 219A SP6C

  • FET Type: 4 N-Channel (Three Level Inverter)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 219A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
  • Power - Max: 925W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
package: SP6
Voorraad6.992
Standard
1200V (1.2kV)
219A
12 mOhm @ 150A, 20V
2.4V @ 30mA (Typ)
483nC @ 20V
8400pF @ 1000V
925W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTC80TDU15PG
Microsemi Corporation

MOSFET 6N-CH 800V 28A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 28A
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
  • Power - Max: 277W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
package: SP6
Voorraad7.952
Standard
800V
28A
150 mOhm @ 14A, 10V
3.9V @ 2mA
180nC @ 10V
4507pF @ 25V
277W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
hot SI8900EDB-T2-E1
Vishay Siliconix

MOSFET 2N-CH 20V 5.4A 10-MFP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1V @ 1.1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-UFBGA, CSPBGA
  • Supplier Device Package: 10-Micro Foot? CSP (2x5)
package: 10-UFBGA, CSPBGA
Voorraad8.088
Logic Level Gate
20V
5.4A
-
1V @ 1.1mA
-
-
1W
-55°C ~ 150°C (TJ)
Surface Mount
10-UFBGA, CSPBGA
10-Micro Foot? CSP (2x5)
QS8J12TCR
Rohm Semiconductor

MOSFET 2P-CH 12V 4.5A TSMT8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 6V
  • Power - Max: 550mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
package: 8-SMD, Flat Lead
Voorraad4.912
Logic Level Gate, 1.5V Drive
12V
4.5A
29 mOhm @ 4.5A, 4.5V
1V @ 1mA
40nC @ 4.5V
4200pF @ 6V
550mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
hot SI4214DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A
  • Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad466.284
Standard
30V
8.5A
23.5 mOhm @ 7A, 10V
2.5V @ 250µA
23nC @ 10V
785pF @ 15V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
2N7002DW-TP
Micro Commercial Co

MOSFET 2N-CH 60V 0.115A SOT-363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad6.256
Standard
60V
115mA
7.5 Ohm @ 50mA, 5V
2V @ 250µA
-
50pF @ 25V
200mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
ALD1102SAL
Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8SOIC

  • FET Type: 2 P-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1.2V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad4.368
Standard
10.6V
-
270 Ohm @ 5V
1.2V @ 10µA
-
10pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IPG20N04S4L11AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 15µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
  • Power - Max: 41W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
package: 8-PowerVDFN
Voorraad6.416
Logic Level Gate
40V
20A
11.6 mOhm @ 17A, 10V
2.2V @ 15µA
26nC @ 10V
1990pF @ 25V
41W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
hot SP8K2TB
Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad1.159.248
Logic Level Gate
30V
6A
30 mOhm @ 6A, 10V
2.5V @ 1mA
10.1nC @ 5V
520pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot IRF7902TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A
  • Rds On (Max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
  • Power - Max: 1.4W, 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad219.264
Logic Level Gate
30V
6.4A, 9.7A
22.6 mOhm @ 6.4A, 10V
2.25V @ 25µA
6.9nC @ 4.5V
580pF @ 15V
1.4W, 2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FC6546010R
Panasonic Electronic Components

MOSFET 2N-CH 60V 0.1A SMINI6-F3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: SMini6-F3-B
package: 6-SMD, Flat Leads
Voorraad24.312
Logic Level Gate
60V
100mA
12 Ohm @ 10mA, 4V
1.5V @ 1µA
-
12pF @ 3V
150mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
SMini6-F3-B
hot SI4931DY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 6.7A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad246.120
Logic Level Gate
12V
6.7A
18 mOhm @ 8.9A, 4.5V
1V @ 350µA
52nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRF9910TRPBF-1
Infineon Technologies

MOSFET 2N-CH 20V 10A/12A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Ta)
  • Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, 1860pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Request a Quote
-
20V
10A (Ta), 12A (Ta)
13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
2.55V @ 250µA
11nC @ 4.5V, 23nC @ 4.5V
900pF @ 10V, 1860pF @ 10V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRLHS6376TR2PBF
Infineon Technologies

MOSFET 2N-CH 30V 3.6A PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Power - Max: 1.5W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-PQFN (2x2)
package: -
Request a Quote
Logic Level Gate
30V
3.6A
63mOhm @ 3.4A, 4.5V
1.1V @ 10µA
2.8nC @ 4.5V
270pF @ 25V
1.5W
-
Surface Mount
6-VDFN Exposed Pad
6-PQFN (2x2)
RF1S530SM9AS2457
Harris Corporation

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMN52D0UVQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
  • Power - Max: 480mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Request a Quote
-
50V
480mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
1.5nC @ 10V
39pF @ 25V
480mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
FDG6304P-X
onsemi

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMG1016UDWQ-7
Diodes Incorporated

MOSFET N/P-CH 20V 1.066A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.066A (Ta), 845mA (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 736.6nC @ 4.5V, 0.62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V, 59.76pF @ 16V
  • Power - Max: 330mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Voorraad18.000
-
20V
1.066A (Ta), 845mA (Ta)
450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
1V @ 250µA
736.6nC @ 4.5V, 0.62nC @ 4.5V
60.67pF @ 10V, 59.76pF @ 16V
330mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMC3032LFDB-7
Diodes Incorporated

MOSFET N/P-CH 30V 5.3A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 3.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA, 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, 7.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 336pF @ 25V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
package: -
Request a Quote
-
30V
5.3A (Ta), 3.4A (Ta)
30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
2V @ 250µA, 2.1V @ 250µA
10.6nC @ 10V, 7.8nC @ 10V
500pF @ 15V, 336pF @ 25V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
PJS6601_S2_00001
Panjit International Inc.

MOSFET N/P-CH 20V 4.1A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
package: -
Request a Quote
-
20V
4.1A (Ta), 3.1A (Ta)
56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V
1.2V @ 250µA
4.6nC @ 4.5V, 5.4nC @ 4.5V
350pF @ 10V, 416pF @ 10V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
DMT3022UEV-13
Diodes Incorporated

MOSFET 2N-CH 30V 17A POWERDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXD)
package: -
Request a Quote
-
30V
17A (Tc)
22mOhm @ 11A, 10V
1.8V @ 250µA
13.9nC @ 10V
903pF @ 15V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXD)
DMT6015LPDW-13
Diodes Incorporated

MOSFET 2N-CH 60V 9.4A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 17.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V
  • Power - Max: 2.4W (Ta), 7.9W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
package: -
Request a Quote
-
60V
9.4A (Ta), 17.1A (Tc)
18mOhm @ 10A, 10V
2.5V @ 250µA
15.7nC @ 10V
808pF @ 30V
2.4W (Ta), 7.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
DMN3061SVT-7
Diodes Incorporated

MOSFET 2N-CH 30V 3.4A TSOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
  • Power - Max: 1.08W (Ta)
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-23-6
package: -
Request a Quote
-
30V
3.4A (Ta)
-
-
6.6nC @ 10V
278pF @ 15V
1.08W (Ta)
-
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-23-6
AOCA36102E
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 22V 30A 10DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 22V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-AlphaDFN (3.4x1.96)
package: -
Request a Quote
-
22V
30A
2.8mOhm @ 5A, 4.5V
1.25V @ 250µA
37nC @ 4.5V
-
3.1W
-55°C ~ 150°C
Surface Mount
10-SMD, No Lead
10-AlphaDFN (3.4x1.96)