Pagina 180 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  180/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSO330N02KGFUMA1
Infineon Technologies

MOSFET 2N-CH 20V 5.4A 8DSO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.072
Logic Level Gate
20V
5.4A
30 mOhm @ 6.5A, 4.5V
1.2V @ 20µA
4.9nC @ 4.5V
730pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
hot IRF8513TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 8A/11A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 11A
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V
  • Power - Max: 1.5W, 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad180.408
Logic Level Gate
30V
8A, 11A
15.5 mOhm @ 8A, 10V
2.35V @ 25µA
8.6nC @ 4.5V
766pF @ 15V
1.5W, 2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7350PBF
Infineon Technologies

MOSFET N/P-CH 100V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
  • Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.416
Standard
100V
2.1A, 1.5A
210 mOhm @ 2.1A, 10V
4V @ 250µA
28nC @ 10V
380pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
QJD1210010
Powerex Inc.

MOSFET 2N-CH 1200V 100A SIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 100A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 500nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 800V
  • Power - Max: 1080W
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: Module
Voorraad4.064
Standard
1200V (1.2kV)
100A
25 mOhm @ 100A, 20V
5V @ 10mA
500nC @ 20V
10200pF @ 800V
1080W
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module
AON3613
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 4.5A 8DFN

  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-DFN (2.9x2.3)
package: 8-SMD, Flat Lead
Voorraad2.160
Logic Level Gate
30V
4.5A
52 mOhm @ 4.5A, 10V
1.5V @ 250µA
10nC @ 10V
245pF @ 15V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-DFN (2.9x2.3)
SI4944DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 9.3A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad2.256
Logic Level Gate
30V
9.3A
9.5 mOhm @ 12.2A, 10V
3V @ 250µA
21nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI5938DU-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 6A 8PWRPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 8.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
package: PowerPAK? ChipFET? Dual
Voorraad2.592
Logic Level Gate
20V
6A
39 mOhm @ 4.4A, 4.5V
1V @ 250µA
16nC @ 8V
520pF @ 10V
8.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFET? Dual
PowerPAK? ChipFet Dual
hot FDW2510NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6.4A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad29.880
Logic Level Gate
20V
6.4A
24 mOhm @ 6.4A, 4.5V
1.5V @ 250µA
12nC @ 4.5V
870pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
FDR8702H
Fairchild/ON Semiconductor

MOSFET N/P-CH 20V SSOT-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Gull Wing
  • Supplier Device Package: SuperSOT?-8
package: 8-SMD, Gull Wing
Voorraad4.592
Logic Level Gate
20V
3.6A, 2.6A
38 mOhm @ 3.6A, 4.5V
1.5V @ 250µA
10nC @ 4.5V
650pF @ 10V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Gull Wing
SuperSOT?-8
APTM10TDUM09PG
Microsemi Corporation

MOSFET 6N-CH 100V 139A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 139A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
package: SP6
Voorraad2.752
Standard
100V
139A
10 mOhm @ 69.5A, 10V
4V @ 2.5mA
350nC @ 10V
9875pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
hot DMP2160UFDB-7
Diodes Incorporated

MOSFET 2P-CH 20V 3.8A 6UDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
package: 6-UDFN Exposed Pad
Voorraad36.000
Logic Level Gate
20V
3.8A
70 mOhm @ 2.8A, 4.5V
900mV @ 250µA
6.5nC @ 4.5V
536pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
SSM6N16FUTE85LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 200mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: 6-TSSOP, SC-88, SOT-363
Voorraad3.088
Standard
20V
100mA
3 Ohm @ 10mA, 4V
1.1V @ 100µA
-
9.3pF @ 3V
200mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
hot IRF7306TR
Infineon Technologies

MOSFET 2P-CH 30V 3.6A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad453.648
Logic Level Gate
30V
3.6A
100 mOhm @ 1.8A, 10V
1V @ 250µA
25nC @ 10V
440pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDPC8014AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 20A/40A

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 20A, 40A
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V
  • Power - Max: 2.1W, 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: Power Clip 56
package: 8-PowerWDFN
Voorraad5.856
Standard
25V
20A, 40A
3.8 mOhm @ 20A, 10V
2.5V @ 250µA
35nC @ 10V
2375pF @ 13V
2.1W, 2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
Power Clip 56
hot EM6J1T2R
Rohm Semiconductor

MOSFET 2P-CH 20V 0.2A EMT6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
package: SOT-563, SOT-666
Voorraad517.212
Logic Level Gate
20V
200mA
1.2 Ohm @ 200mA, 4.5V
1V @ 100µA
1.4nC @ 4.5V
115pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
CTLDM7120-M832DS TR
Central Semiconductor Corp

MOSFET 2N-CH 20V 1A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
  • Power - Max: 1.65W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN Exposed Pad
  • Supplier Device Package: TLM832DS
package: 8-TDFN Exposed Pad
Voorraad28.716
Logic Level Gate
20V
1A (Ta)
100 mOhm @ 500mA, 4.5V
1.2V @ 1mA
2.4nC @ 4.5V
220pF @ 10V
1.65W
-65°C ~ 150°C (TJ)
Surface Mount
8-TDFN Exposed Pad
TLM832DS
DMC3025LSDQ-13
Diodes Incorporated

MOSFET N/P-CH 30V 6.5A/4.2A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
  • Power - Max: 1.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Voorraad30.333
-
30V
6.5A (Ta), 4.2A (Ta)
20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
2V @ 250µA
4.6nC @ 4.5V, 5.1nC @ 4.5V
501pF @ 15V, 590pF @ 25V
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
GSF7002DW
Good-Ark Semiconductor

MOSFET 2N-CH 60V 0.34A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Voorraad16.125
-
60V
340mA (Ta)
5Ohm @ 500mA, 10V
2.5V @ 1mA
-
40pF @ 10V
150mW (Ta)
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
MSCSM70VR1M03CT6AG
Microchip Technology

SIC 2N-CH 700V 585A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 585A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 200A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 1075nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 22500pF @ 700V
  • Power - Max: 1.625kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
700V
585A (Tc)
3.8mOhm @ 200A, 20V
2.4V @ 20mA
1075nC @ 20V
22500pF @ 700V
1.625kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
ZXMC3A16DN8QTA
Diodes Incorporated

MOSFET N/P-CH 30V 6.4A/5.4A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 5.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, 48mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, 24.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, 970pF @ 15V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Request a Quote
-
30V
6.4A (Ta), 5.4A (Ta)
35mOhm @ 9A, 10V, 48mOhm @ 4.2A, 10V
1V @ 250µA
17.5nC @ 10V, 24.9nC @ 10V
796pF @ 25V, 970pF @ 15V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ECH8901-TL-H
onsemi

MOSFET N/P-CH 1.8V

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMN2053UFDB-13
Diodes Incorporated

MOSFET 2N-CH 20V 4.6A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
  • Power - Max: 820mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
package: -
Request a Quote
-
20V
4.6A (Ta)
35mOhm @ 5A, 4.5V
1V @ 250µA
7.7nC @ 10V
369pF @ 10V
820mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
PJS6811_S1_00001
Panjit International Inc.

MOSFET 2P-CH 20V 2.7A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
package: -
Request a Quote
-
20V
2.7A (Ta)
105mOhm @ 2.7A, 4.5V
1.2V @ 250µA
5.4nC @ 4.5V
416pF @ 10V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
DMP3021SPDW-13
Diodes Incorporated

MOSFET 2P-CH 30V 10A/39A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 39A (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1799pF @ 15V
  • Power - Max: 4.7W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
package: -
Request a Quote
-
30V
10A (Ta), 39A (Tc)
18mOhm @ 8A, 10V
2.5V @ 250µA
34nC @ 10V
1799pF @ 15V
4.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
FF1MR12KM1H
Infineon Technologies

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MCH6619-TL-E
onsemi

PCH+PCH 4V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMN62D2UV-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Request a Quote
-
60V
450mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
0.8nC @ 4.5V
41pF @ 30V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
UT6K3TCR1
Rohm Semiconductor

MOSFET 2N-CH 30V 5.5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: HUML2020L8
package: -
Voorraad8.985
-
30V
5.5A (Ta)
42mOhm @ 5A, 4.5V
1.5V @ 1mA
4nC @ 4.5V
450pF @ 15V
2W (Ta)
150°C (TJ)
Surface Mount
8-PowerUDFN
HUML2020L8