Pagina 161 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  161/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
EPC2101ENG
EPC

TRANS GAN 2N-CH 60V BUMPED DIE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
  • Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
package: Die
Voorraad4.704
GaNFET (Gallium Nitride)
60V
9.5A, 38A
11.5 mOhm @ 20A, 5V
2.5V @ 2mA
2.7nC @ 5V
300pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
VQ3001P-E3
Vishay Siliconix

MOSFET 2N/2P-CH 30V 14DIP

  • FET Type: 2 N and 2 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 850mA, 600mA
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 1A, 12V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad2.352
Standard
30V
850mA, 600mA
1 Ohm @ 1A, 12V
2.5V @ 1mA
-
110pF @ 15V
2W
-55°C ~ 150°C (TJ)
-
-
-
SI4622DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V
  • Power - Max: 3.3W, 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.216
Standard
30V
8A
16 mOhm @ 9.6A, 10V
2.5V @ 1mA
60nC @ 10V
2458pF @ 15V
3.3W, 3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NTLJD3183CZTBG
ON Semiconductor

MOSFET N/P-CH 20V 6WDFN

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.2A
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
  • Power - Max: 710mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
package: 6-WDFN Exposed Pad
Voorraad4.544
Logic Level Gate
20V
2.6A, 2.2A
68 mOhm @ 2A, 4.5V
1V @ 250µA
7nC @ 4.5V
355pF @ 10V
710mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
APTM50DUM19G
Microsemi Corporation

MOSFET 2N-CH 500V 163A SP6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 163A
  • Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
  • Power - Max: 1136W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
package: SP6
Voorraad7.552
Standard
500V
163A
22.5 mOhm @ 81.5A, 10V
5V @ 10mA
492nC @ 10V
22400pF @ 25V
1136W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
IRFH4257DTRPBF
Infineon Technologies

MOSFET 2N-CH 25V 25A 24PQFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
  • Power - Max: 25W, 28W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: Dual PQFN (5x4)
package: 8-PowerVDFN
Voorraad5.872
Logic Level Gate
25V
25A
3.4 mOhm @ 25A, 10V
2.1V @ 35µA
15nC @ 4.5V
1321pF @ 13V
25W, 28W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
Dual PQFN (5x4)
APTM20AM06SG
Microsemi Corporation

MOSFET 2N-CH 200V 300A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 300A
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 150A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
package: SP6
Voorraad7.696
Standard
200V
300A
7.2 mOhm @ 150A, 10V
5V @ 6mA
325nC @ 10V
18500pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTC60HM70SCTG
Microsemi Corporation

MOSFET 4N-CH 600V 39A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
package: SP4
Voorraad3.552
Standard
600V
39A
70 mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
7000pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
ALD1110EPAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10V 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1.01V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 600mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
package: 8-DIP (0.300", 7.62mm)
Voorraad7.760
Standard
10V
-
500 Ohm @ 5V
1.01V @ 1µA
-
2.5pF @ 5V
600mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
LN60A01ES-LF
Monolithic Power Systems Inc.

MOSFET 3N-CH 600V 0.08A 8SOIC

  • FET Type: 3 N-Channel, Common Gate
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: 190 Ohm @ 10mA, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -20°C ~ 125°C (TJ)
  • Mounting Type: -
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.760
Standard
600V
80mA
190 Ohm @ 10mA, 10V
1.2V @ 250µA
-
-
1.3W
-20°C ~ 125°C (TJ)
-
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI7216DN-T1-E3
Vishay Siliconix

MOSFET 2N-CH 40V 6A 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
  • Power - Max: 20.8W
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
package: PowerPAK? 1212-8 Dual
Voorraad27.180
Standard
40V
6A
32 mOhm @ 5A, 10V
3V @ 250µA
19nC @ 10V
670pF @ 20V
20.8W
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
hot SI3585DV-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 2A 6-TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
package: SOT-23-6 Thin, TSOT-23-6
Voorraad658.140
Logic Level Gate
20V
2A, 1.5A
125 mOhm @ 2.4A, 4.5V
600mV @ 250µA (Min)
3.2nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
ALD1105PBL
Advanced Linear Devices Inc.

MOSFET 2N/2P-CH 10.6V 14DIP

  • FET Type: 2 N and 2 P-Channel Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-PDIP
package: 14-DIP (0.300", 7.62mm)
Voorraad16.332
Standard
10.6V
-
500 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-PDIP
hot SI6926ADQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.1A 8-TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad438.120
Logic Level Gate
20V
4.1A
30 mOhm @ 4.5A, 4.5V
1V @ 250µA
10.5nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SSM6N15AFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A 2-2J1C

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: 6-TSSOP, SC-88, SOT-363
Voorraad3.280
Logic Level Gate
30V
100mA
3.6 Ohm @ 10mA, 4V
1.5V @ 100µA
-
13.5pF @ 3V
300mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
FTCO3V455A1
Fairchild/ON Semiconductor

MOSFET 6N-CH 40V 150A MODULE

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 1.66 mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 115W
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-PowerDIP Module
  • Supplier Device Package: Module
package: 19-PowerDIP Module
Voorraad7.896
Logic Level Gate
40V
150A
1.66 mOhm @ 80A, 10V
-
-
-
115W
175°C (TJ)
Through Hole
19-PowerDIP Module
Module
CSD87313DMS
Texas Instruments

MOSFET 2N-CH 30V 8WSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-WSON (3.3x3.3)
package: -
Request a Quote
-
30V
-
-
1.25V @ 250µA
28nC @ 4.5V
4290pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-WSON (3.3x3.3)
DMT6018LDR-13
Diodes Incorporated

MOSFET 2N-CH 60V 8.8A 8VDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V
  • Power - Max: 1.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: V-DFN3030-8
package: -
Voorraad59.910
-
60V
8.8A (Ta)
17mOhm @ 8.2A, 10V
3V @ 250µA
13.9nC @ 10V
869pF @ 30V
1.9W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
V-DFN3030-8
DMN2024UVTQ-7
Diodes Incorporated

MOSFET 2N-CH 20V 7A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: -
Request a Quote
-
20V
7A (Ta)
24mOhm @ 6.5A, 4.5V
900mV @ 250µA
7.1nC @ 4.5V
647pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
IPG20N06S4L11ATMA2
Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 28µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
  • Power - Max: 65W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
package: -
Voorraad128.976
Logic Level Gate
60V
20A (Tc)
11.2mOhm @ 17A, 10V
2.2V @ 28µA
53nC @ 10V
4020pF @ 25V
65W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PG-TDSON-8-10
DMN2041UVT-7
Diodes Incorporated

MOSFET 2N-CH 20V 5.8A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: -
Voorraad3.144
-
20V
5.8A (Ta)
28mOhm @ 8.2A, 4.5V
900mV @ 250µA
9.1nC @ 4.5V
689pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
NTMFD0D9N02P1E
onsemi

MOSFET 2N-CH 30V/25V 14A 8PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V, 25V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
  • Power - Max: 960mW (Ta), 1.04W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PQFN (5x6)
package: -
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30V, 25V
14A (Ta), 30A (Ta)
3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
2V @ 340µA, 2V @ 1mA
9nC @ 4.5V, 30nC @ 4.5V
1400pF @ 15V, 5050pF @ 13V
960mW (Ta), 1.04W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PQFN (5x6)
CPH6602-TL-E
onsemi

NCH+NCH 2.5V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
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-
-
-
-
-
-
-
-
-
-
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IRF7313QTRPBF
Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
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-
30V
6.5A
29mOhm @ 5.8A, 10V
1V @ 250µA
33nC @ 10V
650pF @ 25V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FF6MR12W2M1B70BPSA1
Infineon Technologies

SIC 2N-CH 1200V AG-EASY2B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
  • Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY2B
package: -
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-
1200V (1.2kV)
200A (Tj)
5.63mOhm @ 200A, 15V
5.55V @ 80mA
496nC @ 15V
14700pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY2B
DMN3401LDW-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Voorraad27.798
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30V
800mA (Ta)
400mOhm @ 590mA, 10V
1.6V @ 250µA
1.2nC @ 10V
50pF @ 15V
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMPH6050SPDWQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 26A (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UX)
package: -
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60V
6.3A (Ta), 26A (Tc)
48mOhm @ 5A, 10V
3V @ 250µA
30.6nC @ 10V
1525pF @ 30V
1.5W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerTDFN
PowerDI5060-8 (Type UX)
DMN2053UFDB-7
Diodes Incorporated

MOSFET 2N-CH 20V 4.6A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
  • Power - Max: 820mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
package: -
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20V
4.6A (Ta)
35mOhm @ 5A, 4.5V
1V @ 250µA
7.7nC @ 10V
369pF @ 10V
820mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)