Pagina 155 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  155/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot ECH8659-M-TL-H
ON Semiconductor

MOSFET 2N-CH 30V 7A ECH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
package: 8-SMD, Flat Lead
Voorraad25.476
Logic Level Gate, 4V Drive
30V
7A
24 mOhm @ 3.5A, 10V
-
11.8nC @ 10V
710pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
VEC2415-TL-E
ON Semiconductor

MOSFET 2N-CH 60V 3A VEC8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-VEC
package: 8-SMD, Flat Lead
Voorraad4.464
Logic Level Gate
60V
3A
80 mOhm @ 1.5A, 10V
2.6V @ 1mA
10nC @ 10V
505pF @ 20V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-VEC
hot SIA913DJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 4.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
  • Power - Max: 6.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
package: PowerPAK? SC-70-6 Dual
Voorraad32.400
Standard
12V
4.5A
70 mOhm @ 3.3A, 4.5V
1V @ 250µA
12nC @ 8V
400pF @ 6V
6.5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot SI5933DC-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 2.7A 1206-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
package: 8-SMD, Flat Lead
Voorraad5.265.276
Logic Level Gate
20V
2.7A
110 mOhm @ 2.7A, 4.5V
1V @ 250µA
7.7nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot SI3586DV-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 2.9A 6TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
package: SOT-23-6 Thin, TSOT-23-6
Voorraad544.848
Logic Level Gate
20V
2.9A, 2.1A
60 mOhm @ 3.4A, 4.5V
1.1V @ 250µA
6nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
APTM100DUM90G
Microsemi Corporation

MOSFET 2N-CH 1000V 78A SP6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 78A
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
package: SP6
Voorraad2.688
Standard
1000V (1kV)
78A
105 mOhm @ 39A, 10V
5V @ 10mA
744nC @ 10V
20700pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100DDA35T3G
Microsemi Corporation

MOSFET 2N-CH 1000V 22A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 22A
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
package: SP3
Voorraad5.488
Standard
1000V (1kV)
22A
420 mOhm @ 11A, 10V
5V @ 2.5mA
186nC @ 10V
5200pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
DMN3016LDV-7
Diodes Incorporated

MOSFET BVDSS: 25V 30V POWERDI333

  • FET Type: 2 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
package: 8-PowerVDFN
Voorraad2.624
Standard
-
21A (Tc)
12 mOhm @ 7A, 10V
2V @ 250µA
9.5nC @ 4.5V
1184pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
NX3020NAKS,115
Nexperia USA Inc.

MOSFET 2N-CH 30V 0.18A 6TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 180mA
  • Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Power - Max: 375mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
package: 6-TSSOP, SC-88, SOT-363
Voorraad6.496
Logic Level Gate
30V
180mA
4.5 Ohm @ 100mA, 10V
1.5V @ 250µA
0.44nC @ 4.5V
13pF @ 10V
375mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
hot SI4948BEY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad61.188
Logic Level Gate
60V
2.4A
120 mOhm @ 3.1A, 10V
3V @ 250µA
22nC @ 10V
-
1.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDMC8200
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 8A/12A POWER33

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 12A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
  • Power - Max: 700mW, 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
package: 8-PowerWDFN
Voorraad121.020
Logic Level Gate
30V
8A, 12A
20 mOhm @ 6A, 10V
3V @ 250µA
10nC @ 10V
660pF @ 15V
700mW, 900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
DMN1150UFL3-7
Diodes Incorporated

MOSFET 2N-CHA 12V 2A DFN1310

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
  • Power - Max: 390mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad4.752
Standard
12V
2A
150 mOhm @ 1A, 4.5V
1V @ 250µA
1.4nC @ 4.5V
115pF @ 6V
390mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AO8807
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 12V 6.5A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad22.980
Logic Level Gate
12V
6.5A
20 mOhm @ 6.5A, 4.5V
850mV @ 250µA
23nC @ 4.5V
2100pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SSM6P47NU,LF(T
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 2-2Y1A

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
package: 6-WDFN Exposed Pad
Voorraad26.646
Logic Level Gate
20V
4A
95 mOhm @ 1.5A, 4.5V
1V @ 1mA
4.6nC @ 4.5V
290pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
hot SI4904DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 40V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
  • Power - Max: 3.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad74.268
Standard
40V
8A
16 mOhm @ 5A, 10V
2V @ 250µA
85nC @ 10V
2390pF @ 20V
3.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SQJB70EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 100V 11.3A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad7.674
-
100V
11.3A (Tc)
95mOhm @ 4A, 10V
3.5V @ 250µA
7nC @ 10V
220pF @ 25V
27W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
KFC4B22670L
Nuvoton Technology Corporation

MOSFET 20V 2.9A 4CSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 1.45A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V
  • Power - Max: 420mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFLGA, CSP
  • Supplier Device Package: 4-CSP (1.1x1.1)
package: -
Request a Quote
-
20V
2.9A (Ta)
45mOhm @ 1.45A, 4.5V
1.4V @ 100µA
4.5nC @ 4V
440pF @ 10V
420mW (Ta)
150°C
Surface Mount
4-XFLGA, CSP
4-CSP (1.1x1.1)
MMBT7002KDW
Diotec Semiconductor

MOSFET SOT363 N+N 60V 3OHM 150C

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 440pC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 25V
  • Power - Max: 295mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Request a Quote
Logic Level Gate
60V
300mA
3Ohm @ 500mA, 10V
1.75V @ 250µA
440pC @ 4.5V
21pF @ 25V
295mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
SOT-363
NVMFD5C446NWFT1G
onsemi

MOSFET 2N-CH 40V 24A/127A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
  • Power - Max: 3.2W (Ta), 89W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
package: -
Request a Quote
-
40V
24A (Ta), 127A (Tc)
2.9mOhm @ 30A, 10V
3.5V @ 250µA
38nC @ 10V
2450pF @ 25V
3.2W (Ta), 89W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
SH8K26GZ0TB
Rohm Semiconductor

MOSFET 2N-CH 40V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad7.134
-
40V
6A (Ta)
38mOhm @ 6A, 10V
2.5V @ 1mA
2.9nC @ 5V
280pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN2046UVT-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V
  • Power - Max: 590mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: -
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-
20V
2.6A (Ta)
90mOhm @ 3.6A, 4.5V
1.4V @ 250µA
7.4nC @ 10V
278pF @ 10V
590mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
MSCSM120VR1M062CT6AG
Microchip Technology

SIC 2N-CH 1200V 420A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 200A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 1160nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 1000V
  • Power - Max: 1.753kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
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-
1200V (1.2kV)
420A (Tc)
6.2mOhm @ 200A, 20V
2.8V @ 15mA
1160nC @ 20V
15100pF @ 1000V
1.753kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
UPA2562T1H-T1-AT
Renesas Electronics Corporation

MOSFET 2N-CH 30V 4.5A 8VSOF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V
  • Power - Max: 2.2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-VSOF
package: -
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Logic Level Gate
30V
4.5A
55mOhm @ 2A, 4.5V
1.5V @ 1mA
5.4nC @ 4.5V
475pF @ 10V
2.2W
-
Surface Mount
8-SMD, Flat Lead
8-VSOF
SP8M3FD5TB1
Rohm Semiconductor

MOSFET N/P-CH 30V 8SOP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
TSM500P02DCQ
Taiwan Semiconductor Corporation

MOSFET 2P-CH 20V 4.7A 6TDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 0.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
  • Power - Max: 620mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-TDFN (2x2)
package: -
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-
20V
4.7A (Tc)
50mOhm @ 3A, 4.5V
0.8V @ 250µA
13nC @ 4.5V
1230pF @ 10V
620mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-TDFN (2x2)
DMC2710UVQ-13
Diodes Incorporated

MOSFET N/P-CH 20V 1.1A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
  • Power - Max: 460mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
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-
20V
1.1A (Ta), 800mA (Ta)
400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V, 0.7nC @ 4.5V
42pF @ 16V, 49pF @ 16V
460mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
MCGD30P02-TP
Micro Commercial Co

MOSFET 2P-CH 20V 30A DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2992pF @ 10V
  • Power - Max: 21W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: DFN3333-D
package: -
Voorraad29.760
-
20V
30A (Ta)
19mOhm @ 15A, 4.5V
1V @ 250µA
72.8nC @ 10V
2992pF @ 10V
21W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
DFN3333-D
SP8J66FRATB
Rohm Semiconductor

MOSFET 2P-CH 9A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
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-
-
9A (Ta)
18.5mOhm @ 9A, 10V
2.5V @ 1mA
-
-
-
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP