Pagina 151 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
Contacteer ons
SalesDept@heisener.com 86-755-83210559-827
Aanmelden/Registreren
Language Translation

* Please refer to the English Version as our Official Version.

BOM
kar 0

Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  151/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSL215PL6327HTSA1
Infineon Technologies

MOSFET 2P-CH 20V 1.5A TSOP-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad2.544
Logic Level Gate
20V
1.5A
150 mOhm @ 1.5A, 4.5V
1.2V @ 11µA
3.55nC @ 4.5V
346pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
SI9936BDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad4.416
Logic Level Gate
30V
4.5A
35 mOhm @ 6A, 10V
3V @ 250µA
13nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
GWM160-0055X1-SMD
IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Gull Wing
  • Supplier Device Package: ISOPLUS-DIL?
package: 17-SMD, Gull Wing
Voorraad2.528
Standard
55V
150A
3.3 mOhm @ 100A, 10V
4.5V @ 1mA
105nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Gull Wing
ISOPLUS-DIL?
NTMD2P01R2
ON Semiconductor

MOSFET 2P-CH 16V 2.3A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
  • Power - Max: 710mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.856
Logic Level Gate
16V
2.3A
100 mOhm @ 2.4A, 4.5V
1.5V @ 250µA
18nC @ 4.5V
750pF @ 16V
710mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot XP0487800L
Panasonic Electronic Components

MOSFET 2N-CH 50V 0.1A S-MINI-6P

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SMINI6-G1
package: 6-TSSOP, SC-88, SOT-363
Voorraad52.344
Logic Level Gate
50V
100mA
12 Ohm @ 10mA, 4V
1.5V @ 1µA
-
12pF @ 3V
150mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SMINI6-G1
SQJB70EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 100V POWERPAK SO-8L

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad5.088
Standard
100V
11.3A (Tc)
95 mOhm @ 4A, 10V
3.5V @ 250µA
7nC @ 10V
220pF @ 25V
27W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
APTM10AM02FG
Microsemi Corporation

MOSFET 2N-CH 100V 495A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 495A
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
package: SP6
Voorraad4.144
Standard
100V
495A
2.5 mOhm @ 200A, 10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
SQJB60EP-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 60V SO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Power - Max: 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad3.536
Standard
60V
30A (Tc)
12 mOhm @ 10A, 10V
2.5V @ 250µA
30nC @ 10V
1600pF @ 25V
48W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
DMN3035LWN-7
Diodes Incorporated

MOSFET 2N-CH 30V 5.5A 8VDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
  • Power - Max: 770mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: V-DFN3020-8
package: 8-PowerVDFN
Voorraad3.296
Standard
30V
5.5A
35 mOhm @ 4.8A, 10V
2V @ 250µA
9.9nC @ 10V
399pF @ 15V
770mW
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
V-DFN3020-8
QS8J11TCR
Rohm Semiconductor

MOSFET 2P-CH 12V 3.5A TSMT8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
  • Power - Max: 550mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
package: 8-SMD, Flat Lead
Voorraad3.776
Logic Level Gate, 1.5V Drive
12V
3.5A
43 mOhm @ 3.5A, 4.5V
1V @ 1mA
22nC @ 4.5V
2600pF @ 6V
550mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
hot SI7922DN-T1-E3
Vishay Siliconix

MOSFET 2N-CH 100V 1.8A 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A
  • Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
package: PowerPAK? 1212-8 Dual
Voorraad406.368
Logic Level Gate
100V
1.8A
195 mOhm @ 2.5A, 10V
3.5V @ 250µA
8nC @ 10V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
hot ZXMN6A11DN8TA
Diodes Incorporated

MOSFET 2N-CH 60V 2.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad884.352
Logic Level Gate
60V
2.5A
120 mOhm @ 2.5A, 10V
1V @ 250µA (Min)
5.7nC @ 10V
330pF @ 40V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SSM6N44FE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
package: SOT-563, SOT-666
Voorraad95.874
Logic Level Gate
30V
100mA
4 Ohm @ 10mA, 4V
1.5V @ 100µA
-
8.5pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
hot ZXMHC3A01N8TC
Diodes Incorporated

MOSFET 2N/2P-CH 30V 8-SOIC

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.17A, 1.64A
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
  • Power - Max: 870mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.584
Logic Level Gate
30V
2.17A, 1.64A
125 mOhm @ 2.5A, 10V
3V @ 250µA
3.9nC @ 10V
190pF @ 25V
870mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot FDMA3023PZ
Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 2.9A MICROFET6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-MicroFET (2x2)
package: 6-VDFN Exposed Pad
Voorraad145.692
Logic Level Gate
30V
2.9A
90 mOhm @ 2.9A, 4.5V
1V @ 250µA
11nC @ 4.5V
530pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-MicroFET (2x2)
MSCSM120DUM16T3AG
Microchip Technology

SIC 2N-CH 1200V 173A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 745W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
package: -
Request a Quote
-
1200V (1.2kV)
173A (Tc)
16mOhm @ 80A, 20V
2.8V @ 2mA
464nC @ 20V
6040pF @ 1000V
745W (Tc)
-55°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
BSC072N04LDATMA1
Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 20V
  • Power - Max: 65W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
package: -
Voorraad41.562
Logic Level Gate
40V
20A (Tc)
7.2mOhm @ 17A, 10V
2.2V @ 30µA
52nC @ 10V
3990pF @ 20V
65W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
DMN2014LHAB-13
Diodes Incorporated

MOSFET 2N-CH 20V 9A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
  • Power - Max: 800mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
package: -
Voorraad30.000
-
20V
9A (Ta)
13mOhm @ 4A, 4.5V
1.1V @ 250µA
16nC @ 4.5V
1550pF @ 10V
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6 (Type B)
KFCAB21520L
Nuvoton Technology Corporation

DUAL NCH MOSFET 12, 16A, 1.6MOHM

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1.64mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 10V
  • Power - Max: 540mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-SMD
package: -
Request a Quote
-
12V
16A (Ta)
2mOhm @ 8A, 4.5V
1.4V @ 1.64mA
38nC @ 4V
5250pF @ 10V
540mW (Ta)
150°C
Surface Mount
10-SMD, No Lead
10-SMD
2N7002BKSH
Nexperia USA Inc.

2N7002BKS/SOT363/SC-88

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 295mW (Ta), 1.04W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
package: -
Request a Quote
Logic Level Gate
60V
300mA (Ta)
1.6Ohm @ 500mA, 10V
2.1V @ 250µA
0.6nC @ 4.5V
50pF @ 10V
295mW (Ta), 1.04W (Tc)
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
MSCSM170TLM15CAG
Microchip Technology

SIC 4N-CH 1700V 179A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
  • Power - Max: 843W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
package: -
Voorraad15
-
1700V (1.7kV)
179A (Tc)
15mOhm @ 90A, 20V
3.2V @ 7.5mA
534nC @ 20V
9900pF @ 1000V
843W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
DMG4800LSDQ-13
Diodes Incorporated

MOSFET 2N-CH 30V 7.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
  • Power - Max: 1.17W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad6.288
-
30V
7.5A (Ta)
16mOhm @ 9A, 10V
1.6V @ 250µA
8.56nC @ 5V
798pF @ 10V
1.17W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HP8K24TB
Rohm Semiconductor

MOSFET 2N-CH 30V 15A/27A 8HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 2410pF @ 15V
  • Power - Max: 3W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
package: -
Voorraad28.368
-
30V
15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)
8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V
2.5V @ 1mA
10nC @ 10V, 36nC @ 10V
590pF @ 15V, 2410pF @ 15V
3W (Ta)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
VEC2415-TL-EX
onsemi

MOSFET 2N-CH 60V 3A VEC8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
  • Power - Max: 1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/VEC8
package: -
Request a Quote
-
60V
3A (Ta)
80mOhm @ 1.5A, 10V
2.6V @ 1mA
10nC @ 10V
505pF @ 20V
1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
SOT-28FL/VEC8
NVMFD6H840NLWFT1G
onsemi

MOSFET 2N-CH 80V 14A/74A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 96µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
package: -
Request a Quote
-
80V
14A (Ta), 74A (Tc)
6.9mOhm @ 20A, 10V
2V @ 96µA
32nC @ 10V
2002pF @ 40V
-
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
KFC4B21210L
Nuvoton Technology Corporation

MOSFET 12V 4.7A 4CSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 2.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 310µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 10V
  • Power - Max: 370mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFLGA, CSP
  • Supplier Device Package: 4-CSP (1.29x1.29)
package: -
Request a Quote
-
12V
4.7A (Ta)
14.5mOhm @ 2.3A, 4.5V
1.4V @ 310µA
9.4nC @ 4V
1140pF @ 10V
370mW (Ta)
150°C
Surface Mount
4-XFLGA, CSP
4-CSP (1.29x1.29)
SQ4940AEY-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
  • Power - Max: 4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad37.578
-
40V
8A (Tc)
24mOhm @ 5.3A, 10V
2.5V @ 250µA
43nC @ 10V
741pF @ 20V
4W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMC2710UDWQ-13
Diodes Incorporated

MOSFET N/P-CH 20V 0.75A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
  • Power - Max: 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Request a Quote
-
20V
750mA (Ta), 600mA (Ta)
450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V, 0.7nC @ 4.5V
42pF @ 16V, 49pF @ 16V
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363