Pagina 124 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7509TR
Infineon Technologies

MOSFET N/P-CH 30V 2.7A/2A MICRO8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Voorraad30.012
Logic Level Gate
30V
2.7A, 2A
110 mOhm @ 1.4A, 10V
1V @ 250µA
12nC @ 10V
210pF @ 25V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8?
AON6884L_002
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 8DFN5X6

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad2.272
-
-
-
-
-
-
-
-
-
-
-
-
AO4803AL
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad7.424
Logic Level Gate
30V
5A
46 mOhm @ 5A, 10V
2.5V @ 250µA
11nC @ 10V
520pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ECH8675-TL-H
ON Semiconductor

MOSFET 2P-CH 20V 4.5A ECH8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
package: 8-SMD, Flat Lead
Voorraad3.808
Logic Level Gate
20V
4.5A
46 mOhm @ 3A, 4.5V
-
7.3nC @ 4.5V
670pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
APTM120H57FTG
Microsemi Corporation

MOSFET 4N-CH 1200V 17A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
package: SP4
Voorraad6.736
Standard
1200V (1.2kV)
17A
684 mOhm @ 8.5A, 10V
5V @ 2.5mA
187nC @ 10V
5155pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM10HM09FTG
Microsemi Corporation

MOSFET 4N-CH 100V 139A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 139A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
package: SP4
Voorraad6.144
Standard
100V
139A
10 mOhm @ 69.5A, 10V
4V @ 2.5mA
350nC @ 10V
9875pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot 2N7002VAC-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.28A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: SOT-563, SOT-666
Voorraad3.097.200
Standard
60V
280mA
7.5 Ohm @ 50mA, 5V
2.5V @ 250µA
-
50pF @ 25V
150mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN33D8LDW-13
Diodes Incorporated

MOSFET 2N-CH 30V 0.25A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad7.072
Standard
30V
250mA
2.4 Ohm @ 250mA, 10V
1.5V @ 100µA
1.23nC @ 10V
48pF @ 5V
350mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
STL8DN6LF3
STMicroelectronics

MOSFET 2N-CH 60V 20A 5X6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
  • Power - Max: 65W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat? (5x6)
package: 8-PowerVDFN
Voorraad2.000
Logic Level Gate
60V
20A
30 mOhm @ 4A, 10V
3V @ 250µA
13nC @ 10V
668pF @ 25V
65W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerFlat? (5x6)
DMNH6022SSDQ-13
Diodes Incorporated

MOSFET 2NCH 60V 7.1A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad4.128
Standard
60V
7.1A, 22.6A
27 mOhm @ 5A, 10V
3V @ 250µA
32nC @ 30V
2127pF @ 25V
1.5W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD310700SCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
package: 16-SOIC (0.154", 3.90mm Width)
Voorraad4.432
Standard
8V
-
-
20mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
APTC60AM242G
Microsemi Corporation

MOSFET 2N-CH 600V 95A SP2

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 95A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: Module
Voorraad7.904
Standard
600V
95A
24 mOhm @ 47.5A, 10V
3.9V @ 5mA
300nC @ 10V
14400pF @ 25V
462W
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
hot IRF7317TRPBF
Infineon Technologies

MOSFET N/P-CH 20V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad568.344
Logic Level Gate
20V
6.6A, 5.3A
29 mOhm @ 6A, 4.5V
700mV @ 250µA
27nC @ 4.5V
900pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ECH8654-TL-H
ON Semiconductor

MOSFET 2P-CH 20V 5A ECH8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
package: 8-SMD, Flat Lead
Voorraad3.296
Logic Level Gate
20V
5A
38 mOhm @ 3A, 4.5V
-
11nC @ 4.5V
960pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
FC6943010R
Panasonic Electronic Components

MOSFET 2N-CH 30V 0.1A SSMINI6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Power - Max: 125mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
package: SOT-563, SOT-666
Voorraad76.764
Standard
30V
100mA
8 Ohm @ 10mA, 4V
1.5V @ 1µA
-
12pF @ 3V
125mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
SSMini6-F3-B
hot SI7922DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 100V 1.8A 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A
  • Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
package: PowerPAK? 1212-8 Dual
Voorraad15.468
Logic Level Gate
100V
1.8A
195 mOhm @ 2.5A, 10V
3.5V @ 250µA
8nC @ 10V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
BUK9K32-100EX
Nexperia USA Inc.

MOSFET 2N-CH 100V 26A 56LFPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 26A
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V
  • Power - Max: 64W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
package: SOT-1205, 8-LFPAK56
Voorraad76.830
Logic Level Gate
100V
26A
31 mOhm @ 5A, 10V
2.1V @ 1mA
27.3nC @ 5V
3168pF @ 25V
64W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
NXV08H300DT1
onsemi

APM17-MDC, MV7 80V, AL2O3, 2 PHA

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 765µOhm @ 160A, 12V, 580µOhm @ 160A, 12V
  • Vgs(th) (Max) @ Id: 4.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V
  • Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V
  • Power - Max: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
  • Supplier Device Package: APM17-MDC
package: -
Request a Quote
-
80V
-
765µOhm @ 160A, 12V, 580µOhm @ 160A, 12V
4.6V @ 1mA
502nC @ 12V
30150pF @ 40V
-
175°C (TJ)
Through Hole
17-PowerDIP Module (1.390", 35.30mm)
APM17-MDC
FDC655N
Fairchild Semiconductor

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
RF1S630
Harris Corporation

MOSFET N-CH 200V 9A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
G800N06S2
Goford Semiconductor

MOSFET 2N-CH 60V 3A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V
  • Power - Max: 1.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad11.736
-
60V
3A (Tc)
80mOhm @ 3A, 10V
1.2V @ 250µA
6nC @ 10V
458pF @ 30V
1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN2024UFX-7
Diodes Incorporated

MOSFET 2N-CH 20V 8A 4VDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
  • Power - Max: 920mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-VFDFN Exposed Pad
  • Supplier Device Package: V-DFN2050-4
package: -
Request a Quote
-
20V
8A (Tc)
22mOhm @ 4A, 4.5V
1V @ 250µA
14.8nC @ 10V
647pF @ 10V
920mW
-55°C ~ 150°C (TJ)
Surface Mount
4-VFDFN Exposed Pad
V-DFN2050-4
CAR600M12HN6
Wolfspeed, Inc.

SIC 2N-CH 1200V 908A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Voorraad3
-
1200V (1.2kV)
908A (Tc)
-
-
-
45300pF @ 0V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module
CAB320M17XM3
Wolfspeed, Inc.

SIC 1700V 320A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1700V (1.7kV)
320A (Tc)
-
-
-
-
-
-
Chassis Mount
Module
-
TQM110NB04DCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 10A/50A 8PDFNU

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1354pF @ 20V
  • Power - Max: 2.5W (Ta), 58W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFNU (5x6)
package: -
Voorraad23.136
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40V
10A (Ta), 50A (Tc)
11mOhm @ 10A, 10V
3.8V @ 250µA
26nC @ 10V
1354pF @ 20V
2.5W (Ta), 58W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerTDFN
8-PDFNU (5x6)
NVMJD012N06CLTWG
onsemi

MOSFET 2N-CH 60V 11.5A 8LFPAK

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V
  • Power - Max: 3.2W (Ta), 42W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: 8-LFPAK
package: -
Request a Quote
-
60V
11.5A (Ta), 42A (Tc)
11.9mOhm @ 25A, 10V
2.2V @ 30µA
11.5nC @ 10V
792pF @ 25V
3.2W (Ta), 42W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
8-LFPAK
SISF04DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK 1212-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
  • Power - Max: 5.2W (Ta), 69.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8SCD
  • Supplier Device Package: PowerPAK® 1212-8SCD
package: -
Voorraad18.000
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30V
30A (Ta), 108A (Tc)
4mOhm @ 7A, 10V
2.3V @ 250µA
60nC @ 10V
2600pF @ 15V
5.2W (Ta), 69.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SCD
PowerPAK® 1212-8SCD
AOND62930
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 100V 4.5A/7A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 7A (Tc)
  • Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V
  • Power - Max: 3.5W (Ta), 7.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-DFN (5x6)
package: -
Request a Quote
-
100V
4.5A (Ta), 7A (Tc)
68mOhm @ 5A, 10V
2.8V @ 250µA
12nC @ 10V
415pF @ 50V
3.5W (Ta), 7.3W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (5x6)