Pagina 101 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  101/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AO9926BL_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad7.952
Standard
20V
7.6A
23 mOhm @ 7.6A, 10V
1.1V @ 250µA
12.5nC @ 10V
630pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
EMH2409-TL-H
ON Semiconductor

MOSFET 2N-CH 30V 4A EMH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-EMH
package: 8-SMD, Flat Lead
Voorraad5.040
Logic Level Gate
30V
4A
59 mOhm @ 2A, 10V
-
4.4nC @ 10V
240pF @ 10V
1.2W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-EMH
SI4942DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 40V 5.3A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad2.208
Logic Level Gate
40V
5.3A
21 mOhm @ 7.4A, 10V
3V @ 250µA
32nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI4539ADY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 4.4A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad435.036
Logic Level Gate
30V
4.4A, 3.7A
36 mOhm @ 5.9A, 10V
1V @ 250µA (Min)
20nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI3909DV-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 6TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
  • Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
package: SOT-23-6 Thin, TSOT-23-6
Voorraad535.764
Logic Level Gate
20V
-
200 mOhm @ 1.8A, 4.5V
500mV @ 250µA (Min)
4nC @ 4.5V
-
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot SI4804BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad1.059.888
Logic Level Gate
30V
5.7A
22 mOhm @ 7.5A, 10V
3V @ 250µA
11nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IPG20N04S4L07AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
  • Power - Max: 65W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
package: 8-PowerVDFN
Voorraad2.752
Logic Level Gate
40V
20A
7.2 mOhm @ 17A, 10V
2.2V @ 30µA
50nC @ 10V
3980pF @ 25V
65W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
IRF7104PBF
Infineon Technologies

MOSFET 2P-CH 20V 2.3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.536
Logic Level Gate
20V
2.3A
250 mOhm @ 1A, 10V
3V @ 250µA
25nC @ 10V
290pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
GMM3X120-0075X2-SMDSAM
IXYS

MOSFET 6N-CH 75V 110A 24-SMD

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 110A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SMD, Gull Wing
  • Supplier Device Package: 24-SMD
package: 24-SMD, Gull Wing
Voorraad2.112
Standard
75V
110A
-
4V @ 1mA
115nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
24-SMD, Gull Wing
24-SMD
NVMFD5853NLWFT1G
ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
package: 8-PowerTDFN
Voorraad2.112
Logic Level Gate
40V
12A
10 mOhm @ 15A, 10V
2.4V @ 250µA
23nC @ 10V
1100pF @ 25V
3W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
FDWS9420_F085
Fairchild/ON Semiconductor

40V DUAL AUTO N-CH POWER TRENCH

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
  • Power - Max: 75W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PQFN (5x6)
package: 8-PowerTDFN
Voorraad3.248
Standard
40V
20A (Tc)
5.8 mOhm @ 20A, 10V
4V @ 250µA
43nC @ 10V
2100pF @ 20V
75W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-PQFN (5x6)
SH8M41GZETB
Rohm Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.888
Logic Level Gate, 4V Drive
80V
3.4A, 2.6A
130 mOhm @ 3.4A, 10V
2.5V @ 1mA
9.2nC @ 5V
600pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
AON6906A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9.1A/10A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A, 10A
  • Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V
  • Power - Max: 1.9W, 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (5x6)
package: 8-PowerVDFN
Voorraad5.424
Logic Level Gate
30V
9.1A, 10A
14.4 mOhm @ 9.1A, 10V
2.4V @ 250µA
9nC @ 10V
670pF @ 15V
1.9W, 2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (5x6)
PHN203,518
Nexperia USA Inc.

MOSFET 2N-CH 30V 6.3A SOT96-1

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad7.232
Logic Level Gate
30V
6.3A
30 mOhm @ 7A, 10V
2V @ 1mA
14.6nC @ 10V
560pF @ 20V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot NVMFD5877NLT1G
ON Semiconductor

MOSFET 2N-CH 60V 6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
package: 8-PowerTDFN
Voorraad4.944
Logic Level Gate
60V
6A
39 mOhm @ 7.5A, 10V
3V @ 250µA
20nC @ 10V
540pF @ 25V
3.2W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
DI9942T
Diodes Incorporated

MOSFET N/P-CH 20V 2.5A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad7.264
Standard
20V
2.5A
-
-
-
-
1.6W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
BUK7K29-100EX
Nexperia USA Inc.

MOSFET 2N-CH 100V 29.5A LFPAK56

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 29.5A
  • Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2436pF @ 25V
  • Power - Max: 68W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
package: SOT-1205, 8-LFPAK56
Voorraad2.272
Standard
100V
29.5A
24.5 mOhm @ 10A, 10V
4V @ 1mA
38.1nC @ 10V
2436pF @ 25V
68W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
hot NTZD5110NT1G
ON Semiconductor

MOSFET 2N-CH 60V 0.294A SOT563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 294mA
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: SOT-563, SOT-666
Voorraad2.114.760
Logic Level Gate
60V
294mA
1.6 Ohm @ 500mA, 10V
2.5V @ 250µA
0.7nC @ 4.5V
24.5pF @ 20V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN2991UDJ-7A
Diodes Incorporated

MOSFET 2N-CH 20V 0.52A SOT963

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
  • Power - Max: 400mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
package: -
Voorraad29.895
-
20V
520mA (Ta)
990mOhm @ 100mA, 4.5V
1V @ 250µA
0.35nC @ 4.5V
21.5pF @ 15V
400mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
MCQD08N06-TP
Micro Commercial Co

MOSFET 2N-CH 60V 8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
  • Power - Max: 9.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Request a Quote
-
60V
8A
22mOhm @ 8A, 10V
3V @ 250µA
41.9nC @ 10V
2000pF @ 30V
9.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN2022UCA4-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V X4-DSN1717-

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 1438pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, DSBGA
  • Supplier Device Package: X4-DSN1717-4
package: -
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-
24V
7.8A (Ta)
22mOhm @ 3A, 4.5V
1.4V @ 1mA
12.5nC @ 4V
1438pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
4-XFBGA, DSBGA
X4-DSN1717-4
NTTFD4D1N03P1E
onsemi

MOSFET 2N-CH 30V 12A/54A 12WQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V
  • Power - Max: 1W (Ta), 20W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWQFN
  • Supplier Device Package: 12-WQFN (3.3x3.3)
package: -
Voorraad8.247
-
30V
12A (Ta), 54A (Tc)
4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
2.2V @ 270µA
15nC @ 10V, 14nC @ 10V
1103pF @ 15V, 972pF @ 15V
1W (Ta), 20W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWQFN
12-WQFN (3.3x3.3)
SIA922EDJ-T4-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4.4A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.9W (Ta), 7.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SC-70-6 Dual
  • Supplier Device Package: PowerPAK® SC-70-6 Dual
package: -
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-
30V
4.4A (Ta), 4.5A (Tc)
64mOhm @ 3A, 4.5V
1.4V @ 250µA
12nC @ 10V
-
1.9W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
SSM6N7002BFU-T5L-F
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: -
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Logic Level Gate
60V
200mA
2.1Ohm @ 500mA, 10V
3.1V @ 250µA
-
17pF @ 25V
300mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
UPA672CT-T1-AT
Renesas Electronics Corporation

MOSFET 2N-CH 60V 0.1A SC88

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2.7Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88
package: -
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Logic Level Gate, 4.5V Drive
60V
100mA (Ta)
2.7Ohm @ 100mA, 10V
2.5V @ 250µA
2nC @ 10V
20pF @ 10V
200mW (Ta)
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88
IRF40H233ATMA1
Infineon Technologies

MOSFET 2N-CH 40V 65A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
  • Power - Max: 3.8W (Ta), 50W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
package: -
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-
40V
65A (Tc)
6.2mOhm @ 35A, 10V
3.9V @ 50µA
57nC @ 10V
2200pF @ 20V
3.8W (Ta), 50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
SQJB02ELP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
  • Power - Max: 27W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad25.422
-
40V
30A (Tc)
7.5mOhm @ 6A, 10V
2.2V @ 250µA
32nC @ 10V
1700pF @ 20V
27W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
PSMN6R8-40HSX
Nexperia USA Inc.

MOSFET 2N-CH 40V 40A LFPAK56D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
  • Power - Max: 64W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
package: -
Voorraad4.653
-
40V
40A (Ta)
6.8mOhm @ 20A, 10V
4V @ 1mA
28.9nC @ 10V
1947pF @ 25V
64W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D