Pagina 531 - Transistoren - Bipolair (BJT) - Single | Discrete halfgeleiderproducten | Heisener Electronics
Contacteer ons
SalesDept@heisener.com +86-755-83210559-827
Language Translation

* Please refer to the English Version as our Official Version.

Transistoren - Bipolair (BJT) - Single

Archief 20.307
Pagina  531/726
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC846B/DG/B3,235
Nexperia USA Inc.

TRANS GEN PURPOSE TO-236AB

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad7.456
-
-
-
-
-
-
-
-
-
-
-
JAN2N3585
Microsemi Corporation

TRANS NPN 300V 2A TO-66

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
  • Current - Collector Cutoff (Max): 5mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
  • Power - Max: 2.5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
package: TO-213AA, TO-66-2
Voorraad3.520
2A
300V
750mV @ 125mA, 1A
5mA
25 @ 1A, 10V
2.5W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-213AA, TO-66-2
TO-66 (TO-213AA)
JANTX2N5684
Microsemi Corporation

TRANS NPN 80V 50A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
  • Current - Collector Cutoff (Max): 5µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5A, 2V
  • Power - Max: 300W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
package: TO-204AA, TO-3
Voorraad2.320
50A
80V
5V @ 10A, 50A
5µA
30 @ 5A, 2V
300W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
BDX53C-S
Bourns Inc.

TRANS NPN DARL 100V 8A

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 12mA, 3A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
package: TO-220-3
Voorraad7.968
8A
100V
2.5V @ 12mA, 3A
500µA
750 @ 3A, 3V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot BC517RL1G
ON Semiconductor

TRANS NPN DARL 30V 1A TO-92

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
  • Power - Max: 1.5W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad4.800
1A
30V
1V @ 100µA, 100mA
500nA
30000 @ 20mA, 2V
1.5W
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot BC557B
ON Semiconductor

TRANS PNP 45V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 320MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad775.680
100mA
45V
650mV @ 5mA, 100mA
100nA
180 @ 2mA, 5V
625mW
320MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJP5027TU
Fairchild/ON Semiconductor

TRANS NPN 800V 3A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 800V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Power - Max: 50W
  • Frequency - Transition: 15MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
package: TO-220-3
Voorraad6.816
3A
800V
2V @ 300mA, 1.5A
10µA (ICBO)
10 @ 200mA, 5V
50W
15MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220
MPS3702
Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad3.952
800mA
25V
250mV @ 5mA, 50mA
100nA (ICBO)
60 @ 50mA, 5V
625mW
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MPS3904,126
NXP

TRANS NPN 40V 0.1A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad6.176
100mA
40V
300mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
500mW
180MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
ZTX453STOA
Diodes Incorporated

TRANS NPN 100V 1A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
package: E-Line-3, Formed Leads
Voorraad2.672
1A
100V
700mV @ 15mA, 150mA
100nA (ICBO)
40 @ 150mA, 10V
1W
150MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
hot ZXTAM322TA
Diodes Incorporated

TRANS NPN 15V 4.5A 2X2MM 3-MLP

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4.5A
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
  • Current - Collector Cutoff (Max): 25nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
  • Power - Max: 3W
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-PowerSMD, Flat Leads
  • Supplier Device Package: 3-MLP/DFN (2x2)
package: 3-PowerSMD, Flat Leads
Voorraad927.120
4.5A
15V
280mV @ 50mA, 4.5A
25nA
200 @ 3A, 2V
3W
120MHz
-55°C ~ 150°C (TJ)
Surface Mount
3-PowerSMD, Flat Leads
3-MLP/DFN (2x2)
BCX6810H6327XTSA1
Infineon Technologies

TRANSISTOR NPN SOT89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
  • Power - Max: 3W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89
package: TO-243AA
Voorraad3.344
1A
20V
500mV @ 100mA, 1A
100nA (ICBO)
85 @ 500mA, 1V
3W
100MHz
150°C (TJ)
Surface Mount
TO-243AA
PG-SOT89
JANTXV2N6298
Microsemi Corporation

TRANS PNP DARL 60V 8A TO66

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 80mA, 8A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
  • Power - Max: 64W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
package: TO-213AA, TO-66-2
Voorraad7.088
8A
60V
2V @ 80mA, 8A
500µA
750 @ 4A, 3V
64W
-
-65°C ~ 175°C (TJ)
Through Hole
TO-213AA, TO-66-2
TO-66 (TO-213AA)
JANTX2N720A
Microsemi Corporation

TRANS NPN 80V 0.5A TO-18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
package: TO-206AA, TO-18-3 Metal Can
Voorraad4.784
500mA
80V
5V @ 15mA, 150mA
10µA (ICBO)
40 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
TIP127-BP
Micro Commercial Co

TRANS PNP DARL 100V 5A TO-220

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
package: TO-220-3
Voorraad7.632
5A
100V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
hot 2SD1963T100R
Rohm Semiconductor

TRANS NPN 20V 3A SOT-89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
package: TO-243AA
Voorraad19.200
3A
20V
450mV @ 150mA, 1.5A
500nA (ICBO)
180 @ 500mA, 2V
2W
150MHz
150°C (TJ)
Surface Mount
TO-243AA
MPT3
2SCR554P5T100
Rohm Semiconductor

NPN 80V 1.5A MEDIUM POWER TRANSI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
package: TO-243AA
Voorraad3.488
1.5A
80V
300mV @ 25mA, 500mA
1µA (ICBO)
120 @ 100mA, 3V
500mW
300MHz
150°C (TJ)
Surface Mount
TO-243AA
MPT3
PHPT61003PYX
Nexperia USA Inc.

TRANS PNP 100V 3A LFPAK

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
  • Power - Max: 1.25W
  • Frequency - Transition: 125MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-100, SOT-669
  • Supplier Device Package: LFPAK56, Power-SO8
package: SC-100, SOT-669
Voorraad4.256
3A
100V
360mV @ 200mA, 2A
100nA (ICBO)
150 @ 500mA, 10V
1.25W
125MHz
175°C (TJ)
Surface Mount
SC-100, SOT-669
LFPAK56, Power-SO8
BCX51-10,115
Nexperia USA Inc.

TRANS PNP 45V 1A SOT89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 1.3W
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
package: TO-243AA
Voorraad4.112
1A
45V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
1.3W
145MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
SMMBT2222ALT1G
ON Semiconductor

TRANS NPN 40V 0.6A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 225mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
package: TO-236-3, SC-59, SOT-23-3
Voorraad144.864
600mA
40V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
225mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
MMBT5401_R1_00001
Panjit International Inc.

TRANS PNP 150V 0.6A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 225 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: -
Voorraad30.819
600 mA
150 V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
225 mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2SD1223-TE16L1-NQ
Toshiba Semiconductor and Storage

TRANS NPN DARL 80V 4A PW-MOLD

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
  • Current - Collector Cutoff (Max): 20µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
package: -
Voorraad3.663
4 A
80 V
1.5V @ 6mA, 3A
20µA (ICBO)
1000 @ 3A, 2V
1 W
-
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PW-MOLD
CXT2222A-TR-PBFREE
Central Semiconductor Corp

TRANS NPN 40V 0.6A SOT89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1.2 W
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
package: -
Voorraad11.940
600 mA
40 V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
1.2 W
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89
FX509-N-TL-E
onsemi

BIP PNP+PNP 3A 100V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2C2906A-MSCL
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N5327
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 7.5 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
package: -
Request a Quote
10 A
80 V
-
-
-
7.5 W
-
-
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
2SB647DTZ
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR,

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 150mA, 5V
  • Power - Max: 800 mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
package: -
Request a Quote
1 A
80 V
1V @ 50mA, 500mA
10µA (ICBO)
160 @ 150mA, 5V
800 mW
140MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
MPSA42-TIN-LEAD
Central Semiconductor Corp

TRANS NPN 300V 0.5A TO92-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
  • Power - Max: 625 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: -
Request a Quote
500 mA
300 V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
625 mW
50MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3