Pagina 478 - Transistoren - Bipolair (BJT) - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - Bipolair (BJT) - Single

Archief 20.307
Pagina  478/726
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JANTX2N6213
Microsemi Corporation

TRANS PNP 350V 2A TO-66

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 125mA, 1A
  • Current - Collector Cutoff (Max): 5mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
  • Power - Max: 3W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
package: TO-213AA, TO-66-2
Voorraad2.032
2A
350V
2V @ 125mA, 1A
5mA
30 @ 1A, 5V
3W
-
-55°C ~ 200°C (TJ)
Through Hole
TO-213AA, TO-66-2
TO-66 (TO-213AA)
JANTXV2N5666U3
Microsemi Corporation

TRANS NPN 200V 5A U3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
  • Current - Collector Cutoff (Max): 200nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
  • Power - Max: 1.2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: U3
package: 3-SMD, Flat Leads
Voorraad7.424
5A
200V
1V @ 1A, 5A
200nA
40 @ 1A, 5V
1.2W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, Flat Leads
U3
hot MPS6651
ON Semiconductor

TRANS PNP 25V 1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad3.584
1A
25V
600mV @ 100mA, 1A
100nA
50 @ 500mA, 1V
625mW
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot TIP116
Fairchild/ON Semiconductor

TRANS PNP DARL 80V 2A TO-220

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
package: TO-220-3
Voorraad108.696
2A
80V
2.5V @ 8mA, 2A
2mA
1000 @ 1A, 4V
2W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
MPS6513
Fairchild/ON Semiconductor

TRANS NPN 30V 0.2A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad4.928
200mA
30V
500mV @ 5mA, 50mA
50nA (ICBO)
90 @ 2mA, 10V
625mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot TIP32C
ON Semiconductor

TRANS PNP 100V 3A TO220AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 2W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
package: TO-220-3
Voorraad1.349.856
3A
100V
1.2V @ 375mA, 3A
300µA
10 @ 3A, 4V
2W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
JANTXV2N5686
Microsemi Corporation

TRANS NPN 80V 50A TO-39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
  • Power - Max: 300W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AE
  • Supplier Device Package: TO-3
package: TO-204AE
Voorraad4.448
50A
80V
5V @ 10A, 50A
500µA
15 @ 25A, 2V
300W
-
-55°C ~ 200°C (TJ)
Through Hole
TO-204AE
TO-3
BC55PA,115
Nexperia USA Inc.

TRANSISTOR NPN 60V 1A SOT1061

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 420mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: DFN2020D-3
package: 3-SMD, No Lead
Voorraad7.536
1A
60V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
420mW
180MHz
150°C (TJ)
Surface Mount
3-SMD, No Lead
DFN2020D-3
BCX53-16,146
Nexperia USA Inc.

TRANS PNP 80V 1A SOT89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 1.3W
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
package: TO-243AA
Voorraad3.280
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
1.3W
145MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
30A02MH-TL-H
ON Semiconductor

TRANS PNP 30V 0.7A MCPH3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 700mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
  • Power - Max: 600mW
  • Frequency - Transition: 520MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-MCPH
package: SC-70, SOT-323
Voorraad7.264
700mA
30V
220mV @ 10mA, 200mA
100nA (ICBO)
200 @ 10mA, 2V
600mW
520MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
3-MCPH
hot 2SC6011A
Sanken

TRANS NPN 230V 15A TO3P

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
  • Power - Max: 160W
  • Frequency - Transition: 20MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
package: TO-3P-3, SC-65-3
Voorraad5.616
15A
230V
500mV @ 500mA, 5A
10µA (ICBO)
50 @ 3A, 4V
160W
20MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot MJD31CITU
Fairchild/ON Semiconductor

TRANS NPN 100V 3A IPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 1.56W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: IPAK (TO-251)
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad512.508
3A
100V
1.2V @ 375mA, 3A
50µA
10 @ 3A, 4V
1.56W
3MHz
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
IPAK (TO-251)
hot STBV32-AP
STMicroelectronics

TRANS NPN 400V 1.5A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
  • Power - Max: 1.5W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92AP
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad693.720
1.5A
400V
1.5V @ 500mA, 1.5A
1mA
5 @ 1A, 2V
1.5W
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92AP
FMMT619-G
Comchip Technology

NPN TRANSISTOR 2A 50V SOT-23 ROH

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
  • Power - Max: 350mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: TO-236-3, SC-59, SOT-23-3
Voorraad29.772
2A
50V
220mV @ 100mA, 2A
100nA (ICBO)
100 @ 2A, 2V
350mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2SA1700E-TL-E
onsemi

BIP PNP 0.2A 400V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC2411K_R1_00001
Panjit International Inc.

TRANS NPN 32V 0.5A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 32 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
  • Power - Max: 225 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: -
Voorraad8.460
500 mA
32 V
600mV @ 50mA, 500mA
1µA (ICBO)
120 @ 100mA, 3V
225 mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
30C01M-TL-E
onsemi

BIP NPN 0.4A 30V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N2907A-PBFREE
Central Semiconductor Corp

TRANS PNP 60V 0.6A TO18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 400 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
package: -
Voorraad16.032
600 mA
60 V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
400 mW
200MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
2N2814
Microchip Technology

PNP TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N5318
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 87 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
  • Supplier Device Package: TO-61
package: -
Request a Quote
10 A
100 V
-
-
-
87 W
-
-65°C ~ 200°C (TJ)
Stud Mount
TO-211MA, TO-210AC, TO-61-4, Stud
TO-61
2N6351
Microchip Technology

TRANS NPN DARL 150V 5A TO33

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AC, TO-33-4 Metal Can
  • Supplier Device Package: TO-33
package: -
Request a Quote
5 A
150 V
2.5V @ 10mA, 5A
-
1000 @ 5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AC, TO-33-4 Metal Can
TO-33
2N7373
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
  • Power - Max: 4 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254AA
package: -
Request a Quote
5 A
80 V
1.5V @ 500mA, 5A
50µA
70 @ 2.5A, 5V
4 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-254-3, TO-254AA
TO-254AA
BD135-6-BP
Micro Commercial Co

TRANS NPN 45V 1.5A TO126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1.25 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
package: -
Request a Quote
1.5 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1.25 W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
NTE284
NTE Electronics, Inc

TRANS NPN 180V 16A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 16 A
  • Voltage - Collector Emitter Breakdown (Max): 180 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2A, 5V
  • Power - Max: 150 W
  • Frequency - Transition: 6MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
package: -
Request a Quote
16 A
180 V
3V @ 1A, 10A
100µA (ICBO)
70 @ 2A, 5V
150 W
6MHz
150°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
JANSD2N5151
Microchip Technology

RH POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
package: -
Request a Quote
2 A
80 V
1.5V @ 500mA, 5A
50µA
30 @ 2.5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
MMS9015-H-TP
Micro Commercial Co

Interface

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: -
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100 mA
45 V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 1mA, 5V
200 mW
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2C6341
Microchip Technology

POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
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MPS751RLRP
onsemi

TRANSISTOR PNP GP 2A 60V TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 1A, 2V
  • Power - Max: 625 mW
  • Frequency - Transition: 75MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92 (TO-226)
package: -
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2 A
60 V
600mV @ 200mA, 2A
100nA (ICBO)
175 @ 1A, 2V
625 mW
75MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body (Formed Leads)
TO-92 (TO-226)