Pagina 412 - Transistoren - Bipolair (BJT) - Single | Discrete halfgeleiderproducten | Heisener Electronics
Contacteer ons
SalesDept@heisener.com 86-755-83210559-843
Aanmelden/Registreren
Language Translation

* Please refer to the English Version as our Official Version.

BOM
kar 0

Transistoren - Bipolair (BJT) - Single

Archief 20.307
Pagina  412/726
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JANTXV2N3439U4
Microsemi Corporation

TRANS NPN 350V 1A UA

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad2.448
-
-
-
-
-
-
-
-
-
-
-
2SC2705-O(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 150V 0.05A TO-92MOD

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
package: TO-226-3, TO-92-3 Long Body
Voorraad2.064
50mA
150V
1V @ 1mA, 10mA
100nA (ICBO)
80 @ 10mA, 5V
800mW
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM
PN100_D74Z
Fairchild/ON Semiconductor

TRANS NPN 45V 0.5A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad6.272
500mA
45V
400mV @ 20mA, 200mA
50nA
100 @ 150mA, 5V
625mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot KSC1507YTU
Fairchild/ON Semiconductor

TRANS NPN 300V 200UA TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200µA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
  • Power - Max: 15W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
package: TO-220-3
Voorraad40.320
200µA
300V
2V @ 5mA, 50mA
100µA (ICBO)
120 @ 10mA, 10V
15W
80MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
2N4953_D26Z
Fairchild/ON Semiconductor

TRANS NPN 30V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 150mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad5.648
1A
30V
300mV @ 15mA, 150mA
50nA (ICBO)
200 @ 150mA, 10V
625mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC558ABU
Fairchild/ON Semiconductor

TRANS PNP 30V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad7.344
100mA
30V
650mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
500mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2SD1819A0L
Panasonic Electronic Components

TRANS NPN 50V 0.1A SMINI 3P

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
package: SC-70, SOT-323
Voorraad2.240
100mA
50V
300mV @ 10mA, 100mA
100µA
160 @ 2mA, 10V
150mW
150MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SMini3-G1
JAN2N3997
Microsemi Corporation

TRANS NPN 80V 10A TO111

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-111-4, Stud
  • Supplier Device Package: TO-111
package: TO-111-4, Stud
Voorraad7.872
10A
80V
2V @ 500mA, 5A
10µA
80 @ 1A, 2V
2W
-
-65°C ~ 200°C (TJ)
Stud Mount
TO-111-4, Stud
TO-111
2PA1774QMB,315
Nexperia USA Inc.

TRANS PNP 40V 0.1A 3DFN

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: 3-DFN1006B (0.6x1)
package: 3-XFDFN
Voorraad3.520
100mA
40V
200mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
250mW
100MHz
150°C (TJ)
Surface Mount
3-XFDFN
3-DFN1006B (0.6x1)
NSVMMBT2222ATT1G
ON Semiconductor

TRANS NPN 40V 0.6A SC75

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75, SOT-416
package: SC-75, SOT-416
Voorraad5.840
600mA
40V
1V @ 50mA, 500mA
-
100 @ 150mA, 10V
150mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
hot BD140
STMicroelectronics

TRANS PNP 80V 1.5A SOT-32

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: SOT-32-3
package: TO-225AA, TO-126-3
Voorraad7.895.676
1.5A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1.25W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
SOT-32-3
BCX55,115
Nexperia USA Inc.

TRANS NPN 60V 1A SOT89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 1.35W
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
package: TO-243AA
Voorraad12.324
1A
60V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
1.35W
180MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
hot KST05MTF
Fairchild/ON Semiconductor

TRANS NPN 60V 0.5A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad288.000
500mA
60V
250mV @ 10mA, 100mA
100nA
50 @ 100mA, 1V
350mW
100MHz
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot BD677ASTU
Fairchild/ON Semiconductor

TRANS NPN DARL 60V 4A TO-126

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
  • Power - Max: 40W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
package: TO-225AA, TO-126-3
Voorraad46.080
4A
60V
2.8V @ 40mA, 2A
500µA
750 @ 2A, 3V
40W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
hot 2SA1552S-TL-E
ON Semiconductor

TRANS PNP 160V 1.5A TP-FA

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: 2-TP-FA
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad193.536
1.5A
160V
500mV @ 50mA, 500mA
1µA (ICBO)
140 @ 100mA, 5V
1W
120MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
2-TP-FA
PHPT60406NYX
Nexperia USA Inc.

TRANS NPN BIPO 40V 6A 8LFPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 380mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V
  • Power - Max: 1.35W
  • Frequency - Transition: 153MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-100, SOT-669
  • Supplier Device Package: LFPAK56, Power-SO8
package: SC-100, SOT-669
Voorraad24.084
6A
40V
380mV @ 300mA, 6A
100nA
230 @ 500mA, 2V
1.35W
153MHz
175°C (TJ)
Surface Mount
SC-100, SOT-669
LFPAK56, Power-SO8
hot BD787G
ON Semiconductor

TRANS NPN 60V 4A TO-225

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 800mA, 4A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 3V
  • Power - Max: 15W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
package: TO-225AA, TO-126-3
Voorraad4.720
4A
60V
2.5V @ 800mA, 4A
100µA
40 @ 200mA, 3V
15W
50MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-225AA
BC848CW_R1_00001
Panjit International Inc.

TRANS NPN 30V 0.1A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
package: -
Voorraad8.790
100 mA
30 V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
250 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
2N4449U
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 600 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: U
package: -
Request a Quote
-
15 V
450mV @ 10mA, 100mA
400nA
40 @ 10mA, 1V
600 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
U
2SB1578-0-T1-AY
Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR, PNP

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANSM2N5151L
Microchip Technology

RH POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
package: -
Request a Quote
2 A
80 V
1.5V @ 500mA, 5A
50µA
30 @ 2.5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
JANSP2N2906AUBC
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UBC
package: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UBC
PZTA14-ZLX
Nexperia USA Inc.

TRANS NPN DARL 30V 0.5A SOT223

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
  • Power - Max: 1.25 W
  • Frequency - Transition: 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
package: -
Request a Quote
500 mA
30 V
1.5V @ 100µA, 100mA
100nA
20000 @ 100mA, 5V
1.25 W
125MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
JANSP2N2906AUA-TR
Microchip Technology

TRANS PNP 60V 0.6A UA

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
package: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C
Surface Mount
4-SMD, No Lead
UA
BC817-16QB-QZ
Nexperia USA Inc.

SMALL SIGNAL BIPOLAR IN DFN PACK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 350 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1110D-3
package: -
Request a Quote
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
350 mW
100MHz
150°C (TJ)
Surface Mount, Wettable Flank
3-XDFN Exposed Pad
DFN1110D-3
2N6562
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 450 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 100 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Stud Mount
  • Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
  • Supplier Device Package: TO-61
package: -
Request a Quote
10 A
450 V
-
-
-
100 W
-
-
Stud Mount
TO-211MA, TO-210AC, TO-61-4, Stud
TO-61
2N657A
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BC806-16H-QR
Nexperia USA Inc.

BC806-16H-Q/SOT23/TO-236AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 300 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
package: -
Voorraad9.000
500 mA
80 V
400mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
300 mW
80MHz
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB