Pagina 309 - Transistoren - Bipolair (BJT) - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - Bipolair (BJT) - Single

Archief 20.307
Pagina  309/726
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SC2229-Y(SAN2,F,M
Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
package: TO-226-3, TO-92-3 Long Body
Voorraad2.192
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
MPS6531_D75Z
Fairchild/ON Semiconductor

TRANS NPN 40V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad3.440
1A
40V
300mV @ 10mA, 100mA
50nA (ICBO)
90 @ 100mA, 1V
625mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot BDW42
ON Semiconductor

TRANS NPN DARL 100V 15A TO-220AB

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 10A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
  • Power - Max: 85W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
package: TO-220-3
Voorraad16.476
15A
100V
3V @ 50mA, 10A
2mA
1000 @ 5A, 4V
85W
4MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
KSC1507Y
Fairchild/ON Semiconductor

TRANS NPN 300V 200UA TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200µA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
  • Power - Max: 15W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
package: TO-220-3
Voorraad6.032
200µA
300V
2V @ 5mA, 50mA
100µA (ICBO)
120 @ 10mA, 10V
15W
80MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot BU941ZP
STMicroelectronics

TRANS NPN DARL 350V 15A TO-247

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 12A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
  • Power - Max: 155W
  • Frequency - Transition: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
package: TO-247-3
Voorraad17.604
15A
350V
2V @ 300mA, 12A
100µA
300 @ 5A, 10V
155W
-
175°C (TJ)
Through Hole
TO-247-3
TO-247-3
BC328TA
Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad3.376
800mA
25V
700mV @ 50mA, 500mA
100nA
100 @ 100mA, 1V
625mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BD37916STU
Fairchild/ON Semiconductor

TRANS NPN 80V 2A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 2µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 25W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
package: TO-225AA, TO-126-3
Voorraad5.296
2A
80V
1V @ 100mA, 1A
2µA (ICBO)
100 @ 150mA, 2V
25W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
BC546TAR
Fairchild/ON Semiconductor

TRANS NPN 65V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad2.464
100mA
65V
600mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
500mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2SA10350SL
Panasonic Electronic Components

TRANS PNP 55V 0.05A MINI-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 260 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
package: TO-236-3, SC-59, SOT-23-3
Voorraad5.968
50mA
55V
600mV @ 10mA, 100mA
1µA
260 @ 2mA, 5V
200mW
200MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
2SC2988
Panasonic Electronic Components

TRANS NPN 16V 0.5A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 13.5V
  • Power - Max: 5W
  • Frequency - Transition: 1GHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126b
package: TO-225AA, TO-126-3
Voorraad5.056
500mA
16V
-
10µA (ICBO)
20 @ 200mA, 13.5V
5W
1GHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126b
JANTXV2N2484UB
Microsemi Corporation

TRANS NPN 60V 0.05A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 2nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
  • Power - Max: 360mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: -
package: 3-SMD, No Lead
Voorraad6.368
50mA
60V
300mV @ 100µA, 1mA
2nA
225 @ 10mA, 5V
360mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
-
hot 2SB1587
Sanken

TRANS PNP DARL 150V 8A TO3PF

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 6A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 6A, 4V
  • Power - Max: 75W
  • Frequency - Transition: 65MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
package: TO-3P-3 Full Pack
Voorraad37.704
8A
150V
2.5V @ 6mA, 6A
100µA (ICBO)
5000 @ 6A, 4V
75W
65MHz
150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
hot BCX71J
Fairchild/ON Semiconductor

TRANS PNP 45V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max): 20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad11.730.156
100mA
45V
550mV @ 1.25mA, 50mA
20nA
250 @ 2mA, 5V
350mW
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot BCX70G
Fairchild/ON Semiconductor

TRANS NPN 45V 0.2A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max): 20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad978.480
200mA
45V
550mV @ 1.25mA, 50mA
20nA
120 @ 2mA, 5V
350mW
125MHz
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC850BW,115
Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
package: SC-70, SOT-323
Voorraad29.058
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
200mW
100MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
hot BD238STU
Fairchild/ON Semiconductor

TRANS PNP 80V 2A TO-126

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
  • Power - Max: 25W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
package: TO-225AA, TO-126-3
Voorraad6.736
2A
80V
600mV @ 100mA, 1A
100µA (ICBO)
25 @ 1A, 2V
25W
3MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
hot MMBT6427
Fairchild/ON Semiconductor

TRANS NPN DARL 40V 1.2A SOT-23

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14000 @ 500mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
package: TO-236-3, SC-59, SOT-23-3
Voorraad347.844
1.2A
40V
1.5V @ 500µA, 500mA
1µA
14000 @ 500mA, 5V
350mW
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
2SA1163-GR,LF
Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
package: TO-236-3, SC-59, SOT-23-3
Voorraad67.398
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
200 @ 2mA, 6V
150mW
100MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
KA4A4M-0-T1-AT
Renesas Electronics Corporation

TRANSISTOR NPN USM SC-75

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MSD602-RT1
onsemi

TRANS GP NPN 100MA 50V SC59

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BCW30LT3
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 32 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
  • Power - Max: 300 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
package: -
Request a Quote
100 mA
32 V
300mV @ 500µA, 10mA
100nA (ICBO)
215 @ 2mA, 5V
300 mW
-
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
AC847CQ-7
Diodes Incorporated

TRANS NPN 45V 0.1A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 310 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
package: -
Voorraad9.000
100 mA
45 V
600mV @ 5mA, 100mA
15nA
420 @ 2mA, 5V
310 mW
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC847CTT1G
onsemi

TRANS NPN GP 45V 100MA SC75-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75, SOT-416
package: -
Request a Quote
100 mA
45 V
600mV @ 5mA, 100mA
-
420 @ 2mA, 5V
200 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
2SD476KC-E
Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V
  • Power - Max: 40 W
  • Frequency - Transition: 7MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
package: -
Request a Quote
4 A
50 V
1V @ 200mA, 2A
1µA (ICBO)
100 @ 1A, 4V
40 W
7MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
2N5284
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5mA, 5mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 50 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-210AA, TO-59-4, Stud
  • Supplier Device Package: TO-59
package: -
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5 A
100 V
1.5V @ 2.5mA, 5mA
-
-
50 W
-
-65°C ~ 200°C (TJ)
Stud Mount
TO-210AA, TO-59-4, Stud
TO-59
SJ6522AG
onsemi

BIP T03 PNP SPECIAL

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
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2SB1123T-TD-EX
onsemi

BIP PNP 2A 50V

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
package: -
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2 A
50 V
700mV @ 50mA, 1A
100nA (ICBO)
200 @ 100mA, 2V
500 mW
150MHz
150°C (TJ)
Surface Mount
TO-243AA
PCP
2SJ550S-E
Renesas Electronics Corporation

TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
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