Pagina 254 - Transistoren - Bipolair (BJT) - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - Bipolair (BJT) - Single

Archief 20.307
Pagina  254/726
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SC2655-Y,T6SWFF(M
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
package: TO-226-3, TO-92-3 Long Body
Voorraad3.360
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
JANTX2N7370
Microsemi Corporation

TRANS NPN DARL 100V 12A TO254

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 12A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
  • Power - Max: 100W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
package: TO-254-3, TO-254AA (Straight Leads)
Voorraad7.856
12A
100V
3V @ 120mA, 12A
1mA
1000 @ 6A, 3V
100W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
2STN2340
STMicroelectronics

TRANS PNP 40V 3A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
  • Power - Max: 1.6W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
package: TO-261-4, TO-261AA
Voorraad6.480
3A
40V
350mV @ 150mA, 3A
100nA (ICBO)
180 @ 1A, 2V
1.6W
100MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2SB0766GRL
Panasonic Electronic Components

TRANS PNP 50V 1A MINI-PWR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MiniP3-F2
package: TO-243AA
Voorraad4.560
1A
50V
400mV @ 50mA, 500mA
100nA (ICBO)
120 @ 500mA, 10V
1W
200MHz
150°C (TJ)
Surface Mount
TO-243AA
MiniP3-F2
hot NSCT2907ALT1G
ON Semiconductor

TRANS PNP 60V 0.6A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 225mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
package: TO-236-3, SC-59, SOT-23-3
Voorraad4.640
600mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
225mW
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
KSC388YBU
Fairchild/ON Semiconductor

TRANS NPN 25V 0.05A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 1.5mA, 15mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 12.5mA, 12.5V
  • Power - Max: 300mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad7.616
50mA
25V
200mV @ 1.5mA, 15mA
100nA (ICBO)
20 @ 12.5mA, 12.5V
300mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot MJ4035
STMicroelectronics

TRANS NPN DARL 100V 16A TO-3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 16A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 16A
  • Current - Collector Cutoff (Max): 3mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 10A, 3V
  • Power - Max: 150W
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
package: TO-204AA, TO-3
Voorraad7.032
16A
100V
4V @ 80mA, 16A
3mA
1000 @ 10A, 3V
150W
-
200°C (TJ)
Chassis Mount
TO-204AA, TO-3
TO-3
BC182LB_D75Z
Fairchild/ON Semiconductor

TRANS NPN 50V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad3.472
100mA
50V
600mV @ 5mA, 100mA
15nA (ICBO)
40 @ 10µA, 5V
350mW
150MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2SB12990P
Panasonic Electronic Components

TRANS PNP 60V 3A TO-220F

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 4V
  • Power - Max: 2W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-A1
package: TO-220-3 Full Pack
Voorraad3.056
3A
60V
1V @ 50mA, 2A
100µA
400 @ 500mA, 4V
2W
30MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-A1
MPS2924
Fairchild/ON Semiconductor

TRANS NPN 25V 0.1A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad3.136
100mA
25V
-
500nA (ICBO)
150 @ 2mA, 10V
625mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2SB14350RA
Panasonic Electronic Components

TRANS PNP 50V 2A MT-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 2V
  • Power - Max: 1.5W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: MT-3-A1
package: 3-SIP
Voorraad14.700
2A
50V
300mV @ 50mA, 1A
100nA (ICBO)
120 @ 200mA, 2V
1.5W
80MHz
150°C (TJ)
Through Hole
3-SIP
MT-3-A1
MJD112-TP
Micro Commercial Co

TRANS NPN 100V 2A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
  • Power - Max: 1W
  • Frequency - Transition: 25MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad26.214
2A
100V
3V @ 40mA, 4A
20nA
1000 @ 2A, 3V
1W
25MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot BCV47,215
Nexperia USA Inc.

TRANS NPN DARL 60V 0.5A SOT23

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 220MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
package: TO-236-3, SC-59, SOT-23-3
Voorraad33.600
500mA
60V
1V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
250mW
220MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BCW66KHE6327HTSA1
Infineon Technologies

TRANS NPN 45V 0.8A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad274.314
800mA
45V
450mV @ 50mA, 500mA
20nA (ICBO)
250 @ 100mA, 1V
500mW
170MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
hot MJD32CTF
Fairchild/ON Semiconductor

TRANS PNP 100V 3A DPAK

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 1.56W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad175.296
3A
100V
1.2V @ 375mA, 3A
50µA
10 @ 3A, 4V
1.56W
3MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
MMBT3906LP-7B
Diodes Incorporated

TRANS PNP 40V 0.2A DFN1006-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 250mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UFDFN
  • Supplier Device Package: 3-DFN1006 (1.0x0.6)
package: 3-UFDFN
Voorraad106.950
200mA
40V
400mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
250mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
3-UFDFN
3-DFN1006 (1.0x0.6)
hot MJW1302AG
ON Semiconductor

TRANS PNP 230V 15A TO247

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 10A
  • Current - Collector Cutoff (Max): 50µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7A, 5V
  • Power - Max: 200W
  • Frequency - Transition: 30MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
package: TO-247-3
Voorraad19.560
15A
230V
2V @ 1A, 10A
50µA (ICBO)
50 @ 7A, 5V
200W
30MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
BCX55E6327
Infineon Technologies

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 2 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89-4-2
package: -
Request a Quote
1 A
60 V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
2 W
100MHz
150°C (TJ)
Surface Mount
TO-243AA
PG-SOT89-4-2
MPS2907RLRP
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 625 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92 (TO-226)
package: -
Request a Quote
600 mA
40 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
625 mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92 (TO-226)
D882-GR
MDD

TRANS NPN 30V 3A SOT89-3L

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 90MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3L
package: -
Request a Quote
3 A
30 V
400mV @ 200mA, 2A
10µA
60 @ 1A, 2V
500 mW
90MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3L
JANSR2N2906AL
Microchip Technology

TRANS PNP 60V 0.6A TO18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
package: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
2N2991
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
package: -
Request a Quote
1 A
80 V
3V @ 50µA, 200µA
-
-
5 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
2N4116
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 37 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-210AA, TO-59-4, Stud
  • Supplier Device Package: TO-59
package: -
Request a Quote
5 A
80 V
600mV @ 200µA, 2mA
-
-
37 W
-
-65°C ~ 200°C (TJ)
Stud Mount
TO-210AA, TO-59-4, Stud
TO-59
JANSD2N3019
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
package: -
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1 A
80 V
500mV @ 50mA, 500mA
10nA
100 @ 150mA, 10V
800 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
JANSF2N2907A
Microchip Technology

TRANS PNP 60V 0.6A TO18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
package: -
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600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
SBC847BLT1GPO
onsemi

SS SOT23 GP XSTR SPCL TR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
package: -
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100 mA
45 V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
BCX56-QF
Nexperia USA Inc.

BCX56-Q/SOT89/MPT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
package: -
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1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
500 mW
180MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
MMST4126T146
Rohm Semiconductor

TRANS GP BJT PNP 25V 0.2A 3-PIN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
  • Power - Max: 200 mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
package: -
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200 mA
25 V
500mV @ 2mA, 20mA
100nA (ICBO)
82 @ 10mA, 10V
200 mW
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3