Pagina 216 - Transistoren - Bipolair (BJT) - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - Bipolair (BJT) - Single

Archief 20.307
Pagina  216/726
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC 846BW H6327
Infineon Technologies

TRANS NPN 65V 0.1A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
package: SC-70, SOT-323
Voorraad3.552
100mA
65V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
2SA1020-Y,HOF(M
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
package: TO-226-3, TO-92-3 Long Body
Voorraad6.208
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
BC556_J35Z
Fairchild/ON Semiconductor

TRANS PNP 65V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad5.360
100mA
65V
650mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
500mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC640,126
NXP

TRANS PNP 80V 1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 830mW
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad6.576
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
830mW
145MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot 2PB709AR,115
NXP

TRANS PNP 45V 0.1A SC59

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
package: TO-236-3, SC-59, SOT-23-3
Voorraad72.000
100mA
45V
500mV @ 10mA, 100mA
10nA (ICBO)
210 @ 2mA, 10V
250mW
70MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
KSD560OTU
Fairchild/ON Semiconductor

TRANS NPN DARL 100V 5A TO-220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 2V
  • Power - Max: 1.5W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
package: TO-220-3
Voorraad3.648
5A
100V
1.5V @ 3mA, 3A
1µA (ICBO)
3000 @ 3A, 2V
1.5W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
ZTX576STOB
Diodes Incorporated

TRANS PNP 200V 1A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
package: E-Line-3, Formed Leads
Voorraad3.872
1A
200V
300mV @ 10mA, 100mA
100nA (ICBO)
50 @ 300mA, 10V
1W
100MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
MPS6717
ON Semiconductor

TRANS NPN 80V 0.5A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92
package: TO-226-3, TO-92-3 Long Body
Voorraad5.312
500mA
80V
500mV @ 10mA, 250mA
100nA (ICBO)
50 @ 250mA, 1V
1W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92
hot 2N2905A
Microsemi Corporation

TRANS PNP 60V 0.6A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
package: TO-205AD, TO-39-3 Metal Can
Voorraad32.964
600mA
60V
1.6V @ 50mA, 500mA
1µA
100 @ 150mA, 10V
800mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
hot ST1510FX
STMicroelectronics

TRANS NPN 750V 12A ISOWATT218FX

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 12A
  • Voltage - Collector Emitter Breakdown (Max): 750V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 1.5A, 6A
  • Current - Collector Cutoff (Max): 200µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 6.5 @ 6A, 5V
  • Power - Max: 62W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOWATT218FX
  • Supplier Device Package: ISOWATT-218FX
package: ISOWATT218FX
Voorraad6.528
12A
750V
2V @ 1.5A, 6A
200µA
6.5 @ 6A, 5V
62W
-
150°C (TJ)
Through Hole
ISOWATT218FX
ISOWATT-218FX
hot ZXTP2014GTA
Diodes Incorporated

TRANS PNP 140V 4A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
  • Power - Max: 3W
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
package: TO-261-4, TO-261AA
Voorraad440.568
4A
140V
360mV @ 300mA, 3A
20nA (ICBO)
100 @ 1A, 5V
3W
120MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot FMMT489TA
Diodes Incorporated

TRANS NPN 30V 1A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
  • Power - Max: 500mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad187.776
1A
30V
600mV @ 200mA, 2A
100nA
100 @ 1A, 2V
500mW
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot ZXTP19100CGTA
Diodes Incorporated

TRANS PNP 100V 2A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 3W
  • Frequency - Transition: 142MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
package: TO-261-4, TO-261AA
Voorraad396.000
2A
100V
295mV @ 200mA, 2A
50nA (ICBO)
200 @ 100mA, 2V
3W
142MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
NJVNJD2873T4G-VF01
ON Semiconductor

TRANS NPN 50V 2A DPAK-4

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 1.68W
  • Frequency - Transition: 65MHz
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad2.100
2A
50V
300mV @ 50mA, 1A
100nA (ICBO)
120 @ 500mA, 2V
1.68W
65MHz
-65°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
KSP2907ACTA
Fairchild/ON Semiconductor

TRANS PNP 60V 0.6A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad4.864
600mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
625mW
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot DCX68-25-13
Diodes Incorporated

TRANS NPN 20V 1A SOT89-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
  • Power - Max: 1W
  • Frequency - Transition: 330MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
package: TO-243AA
Voorraad17.604
1A
20V
500mV @ 100mA, 1A
100nA (ICBO)
160 @ 500mA, 1V
1W
330MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
hot ZXTP4003ZTA
Diodes Incorporated

TRANS PNP 100V 1A TO-243AA

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV
  • Power - Max: 1.5W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
package: TO-243AA
Voorraad228.000
1A
100V
-
50nA (ICBO)
100 @ 150mA, 200mV
1.5W
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89
hot MSC2712GT1G
ON Semiconductor

TRANS NPN 50V 0.1A SC59

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
package: TO-236-3, SC-59, SOT-23-3
Voorraad1.029.444
100mA
50V
500mV @ 10mA, 100mA
100nA
200 @ 2mA, 6V
200mW
50MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
BC857,215
Nexperia USA Inc.

TRANS PNP 45V 0.1A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
package: TO-236-3, SC-59, SOT-23-3
Voorraad139.968
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
125 @ 2mA, 5V
250mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
2C6287-MSCL
Microchip Technology

POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N744
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2C5154JS1-5
Microchip Technology

POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MJE13004
Harris Corporation

TRANS NPN 300V 4A TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Power - Max: 75 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
package: -
Request a Quote
4 A
300 V
1V @ 1A, 4A
1mA
10 @ 1A, 5V
75 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
BC807-40LZ
Nexperia USA Inc.

BC807-40L/SOT23/TO-236AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 250 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
package: -
Voorraad89.400
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
250 @ 100mA, 1V
250 mW
80MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
2N696S
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
  • Power - Max: 600 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
package: -
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-
40 V
1.5V @ 15mA, 150mA
10µA (ICBO)
20 @ 150mA, 10V
600 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
PN2222-H-AP
Micro Commercial Co

TRANS NPN 30V 0.6A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 10V
  • Power - Max: 625 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
package: -
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600 mA
30 V
1V @ 50mA, 500mA
100nA
200 @ 1mA, 10V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92
2CGA201A-MSCL
Microchip Technology

POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NTE330
NTE Electronics, Inc

TRANS NPN 40V 25A TO36

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 25 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 4A, 25A
  • Current - Collector Cutoff (Max): 300µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
  • Power - Max: 87.5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 90°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-36 (2 Leads + Case)
  • Supplier Device Package: TO-36
package: -
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25 A
40 V
700mV @ 4A, 25A
300µA (ICBO)
15 @ 15A, 4V
87.5 W
-
-65°C ~ 90°C (TJ)
Stud Mount
TO-36 (2 Leads + Case)
TO-36