Pagina 186 - Transistoren - Bipolair (BJT) - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - Bipolair (BJT) - Single

Archief 20.307
Pagina  186/726
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC857CWE6327BTSA1
Infineon Technologies

TRANS PNP 45V 0.1A SOT-323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
package: SC-70, SOT-323
Voorraad6.880
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
2SD2206A(T6SEP,F,M
Toshiba Semiconductor and Storage

TRANS NPN 2A 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
package: TO-226-3, TO-92-3 Long Body
Voorraad4.384
2A
120V
1.5V @ 1mA, 1A
-
2000 @ 1A, 2V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
BD246C-S
Bourns Inc.

TRANS PNP 100V 10A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 10A, 4V
  • Power - Max: 3W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3
  • Supplier Device Package: SOT-93
package: TO-218-3
Voorraad5.936
10A
100V
4V @ 2.5A, 10A
700µA
4 @ 10A, 4V
3W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-218-3
SOT-93
P2N2222ARL1
ON Semiconductor

TRANS NPN 40V 0.6A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad4.400
600mA
40V
1V @ 50mA, 500mA
10nA
100 @ 150mA, 10V
625mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
KSD882OS
Fairchild/ON Semiconductor

TRANS NPN 30V 3A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
  • Power - Max: 1W
  • Frequency - Transition: 90MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126-3
package: TO-225AA, TO-126-3
Voorraad6.688
3A
30V
500mV @ 200mA, 2A
1µA (ICBO)
100 @ 1A, 2V
1W
90MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
KSD1020YBU
Fairchild/ON Semiconductor

TRANS NPN 25V 0.7A TO-92S

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
package: TO-226-3, TO-92-3 Short Body
Voorraad5.040
700mA
25V
400mV @ 70mA, 700mA
100nA (ICBO)
120 @ 100mA, 1V
350mW
170MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FMMTL720TA
Diodes Incorporated

TRANS PNP 40V 1A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad5.616
1A
40V
300mV @ 100mA, 1A
10nA
200 @ 500mA, 5V
500mW
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC32825
Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad6.848
800mA
25V
700mV @ 50mA, 500mA
100nA
160 @ 100mA, 1V
625mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BD37510STU
Fairchild/ON Semiconductor

TRANS NPN 45V 2A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 2µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 25W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
package: TO-225AA, TO-126-3
Voorraad3.536
2A
45V
1V @ 100mA, 1A
2µA (ICBO)
63 @ 150mA, 2V
25W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
JANTXV2N3500L
Microsemi Corporation

TRANS NPN 150V 0.3A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
package: TO-205AA, TO-5-3 Metal Can
Voorraad3.824
300mA
150V
400mV @ 15mA, 150mA
10µA (ICBO)
40 @ 150mA, 10V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
NJVMJB45H11T4G
ON Semiconductor

TRANS PNP 80V 10A D2PAK-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
  • Power - Max: 2W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad5.840
10A
80V
1V @ 400mA, 8A
10µA
40 @ 4A, 1V
2W
40MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
BD677AS
Fairchild/ON Semiconductor

TRANS NPN DARL 60V 4A TO-126

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
  • Power - Max: 40W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
package: TO-225AA, TO-126-3
Voorraad2.016
4A
60V
2.8V @ 40mA, 2A
500µA
750 @ 2A, 3V
40W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
hot BD438
STMicroelectronics

TRANS PNP 45V 4A SOT32

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Power - Max: 36W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: SOT-32
package: TO-225AA, TO-126-3
Voorraad7.312.272
4A
45V
600mV @ 200mA, 2A
100µA
30 @ 10mA, 5V
36W
3MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
SOT-32
2PB710ARL,235
Nexperia USA Inc.

TRANS PNP 50V 0.5A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
package: TO-236-3, SC-59, SOT-23-3
Voorraad3.696
500mA
50V
600mV @ 30mA, 300mA
10nA (ICBO)
120 @ 150mA, 10V
250mW
120MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BCW32,215
Nexperia USA Inc.

TRANS NPN 32V 0.1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 32V
  • Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
package: TO-236-3, SC-59, SOT-23-3
Voorraad24.786
100mA
32V
210mV @ 2.5mA, 50mA
100nA (ICBO)
200 @ 2mA, 5V
250mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BC847BM-TP
Micro Commercial Co

NPN PLASTIC-ENCAPSULATE BIPLOAR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: -
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: SOT-883
package: SC-101, SOT-883
Voorraad607.086
100mA
45V
400mV @ 5mA, 100mA
15nA
220 @ 2mA, 5V
-
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-101, SOT-883
SOT-883
CJD42C TR13
Central Semiconductor Corp

TRANS PNP 100V 6A DPAK

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
  • Power - Max: 1.75W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad26.412
6A
100V
1.5V @ 600mA, 6A
50µA
15 @ 3A, 4V
1.75W
3MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
FMMTA92TA
Diodes Incorporated

TRANS PNP 300V 0.2A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
  • Power - Max: 330mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad23.946
200mA
300V
500mV @ 2mA, 20mA
250nA (ICBO)
25 @ 30mA, 10V
330mW
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N3120-TIN-LEAD
Central Semiconductor Corp

TRANSISTOR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 150mA, 1V
  • Power - Max: -
  • Frequency - Transition: 130MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
package: -
Request a Quote
-
45 V
-
10nA
30 @ 150mA, 1V
-
130MHz
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
KSC5321TU
Fairchild Semiconductor

POWER BIPOLAR TRANSISTOR, 5A, 50

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
  • Power - Max: -
  • Frequency - Transition: 14MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
package: -
Request a Quote
-
-
1V @ 600mA, 3A
100µA (ICBO)
15 @ 600mA, 5V
-
14MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
JANSM2N3635UB
Microchip Technology

TRANS PNP 140V 1A UB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Power - Max: 1.5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
package: -
Request a Quote
1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 10mA, 10V
1.5 W
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
BSP60
Infineon Technologies

TRANS PNP DARL 45V 1A SOT223-4

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
  • Power - Max: 1.5 W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4-21
package: -
Request a Quote
1 A
45 V
1.8V @ 1mA, 1A
10µA
2000 @ 500mA, 10V
1.5 W
200MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4-21
2SD1286-Z-E1-AZ
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 2V
  • Power - Max: 2 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: MP-3Z
package: -
Request a Quote
1 A
60 V
1.5V @ 500µA, 500mA
10µA (ICBO)
2000 @ 500mA, 2V
2 W
-
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
MP-3Z
2SC4104-4-TB-E
onsemi

BIP NPN 50MA 60V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
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2N5321
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
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2N5339U3
Microchip Technology

TRANS NPN 100V 100UA U-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 µA
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-276AA
  • Supplier Device Package: U-3 (TO-276AA)
package: -
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100 µA
100 V
1.2V @ 500mA, 5A
100µA
60 @ 2A, 2V
1 W
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-65°C ~ 200°C (TJ)
Surface Mount
TO-276AA
U-3 (TO-276AA)
2SC3392-5-TB-E
onsemi

BIP NPN 0.5A 50V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
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2SAR514PHZGT100
Rohm Semiconductor

TRANS PNP 80V 0.7A SOT89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 700 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
  • Power - Max: 500 mW
  • Frequency - Transition: 380MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
package: -
Voorraad177
700 mA
80 V
400mV @ 15mA, 300mA
1µA (ICBO)
120 @ 100mA, 3V
500 mW
380MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89