Pagina 102 - Transistoren - Bipolair (BJT) - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - Bipolair (BJT) - Single

Archief 20.307
Pagina  102/726
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSP52H6327XTSA1
Infineon Technologies

TRANS NPN DARL 80V 1A SOT223

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
  • Power - Max: 1.5W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
package: TO-261-4, TO-261AA
Voorraad4.336
1A
80V
1.8V @ 1mA, 1A
10µA
2000 @ 500mA, 10V
1.5W
200MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
TIP29A-S
Bourns Inc.

TRANS NPN 60V 1A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
package: TO-220-3
Voorraad3.392
1A
60V
700mV @ 125mA, 1A
300µA
15 @ 1A, 4V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
2N6515RLRM
ON Semiconductor

TRANS NPN 250V 0.5A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 50mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad2.304
500mA
250V
1V @ 5mA, 50mA
50nA (ICBO)
45 @ 50mA, 10V
625mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJC2383OTF
Fairchild/ON Semiconductor

TRANS NPN 160V 1A SOT-89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
package: TO-243AA
Voorraad3.584
1A
160V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 200mA, 5V
500mW
100MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
KSC2258AS
Fairchild/ON Semiconductor

TRANS NPN 300V 0.1A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 40mA, 20V
  • Power - Max: 4W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126-3
package: TO-225AA, TO-126-3
Voorraad3.408
100mA
300V
1.2V @ 5mA, 50mA
-
40 @ 40mA, 20V
4W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
KSC2331OBU
Fairchild/ON Semiconductor

TRANS NPN 60V 0.7A TO-92L

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 Long Body
Voorraad6.464
700mA
60V
700mV @ 50mA, 500mA
100nA (ICBO)
70 @ 50mA, 2V
1W
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92-3
KSD261CGBU
Fairchild/ON Semiconductor

TRANS NPN 20V 0.5A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad4.800
500mA
20V
400mV @ 50mA, 500mA
100nA (ICBO)
200 @ 100mA, 1V
500mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
KSC815CYTA
Fairchild/ON Semiconductor

TRANS NPN 45V 0.2A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
  • Power - Max: 400mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad2.240
200mA
45V
400mV @ 15mA, 150mA
100nA (ICBO)
120 @ 50mA, 1V
400mW
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FMMT720TC
Diodes Incorporated

TRANS PNP 40V 1.5A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 190MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad6.128
1.5A
40V
330mV @ 100mA, 1.5A
100nA
300 @ 100mA, 2V
625mW
190MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot BD136
ON Semiconductor

TRANS PNP 45V 1.5A TO225AA

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
package: TO-225AA, TO-126-3
Voorraad1.985.208
1.5A
45V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1.25W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-225AA
BCX6816H6327XTSA1
Infineon Technologies

TRANSISTOR AF SOT89-4

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
  • Power - Max: 3W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89
package: TO-243AA
Voorraad5.200
1A
20V
500mV @ 100mA, 1A
100nA (ICBO)
100 @ 500mA, 1V
3W
100MHz
150°C (TJ)
Surface Mount
TO-243AA
PG-SOT89
JANTX2N4150
Microsemi Corporation

TRANS NPN 70V 10A TO-5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
package: TO-205AA, TO-5-3 Metal Can
Voorraad2.736
10A
70V
2.5V @ 1A, 10A
10µA
40 @ 5A, 5V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
NSVMMBT5087LT1G
ON Semiconductor

TRANS PNP 50V 0.05A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
  • Power - Max: 225mW
  • Frequency - Transition: 40MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
package: TO-236-3, SC-59, SOT-23-3
Voorraad4.496
50mA
50V
300mV @ 1mA, 10mA
50nA (ICBO)
250 @ 100µA, 5V
225mW
40MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
BCP56-16,135
Nexperia USA Inc.

TRANS NPN 80V 1A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 960mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
package: TO-261-4, TO-261AA
Voorraad3.952
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
960mW
180MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BC857BM-TP
Micro Commercial Co

PNP PLASTIC-ENCAPSULATE BIPLOAR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 5mA
  • Current - Collector Cutoff (Max): 15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: -
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: SOT-883
package: SC-101, SOT-883
Voorraad80.094
100mA
45V
400mV @ 100mA, 5mA
15nA
220 @ 2mA, 5V
-
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-101, SOT-883
SOT-883
MJD32CQ-13
Diodes Incorporated

TRANS PNP 100V 3A TO252-3L

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 15W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad26.826
3A
100V
1.2V @ 375mA, 3A
1µA
10 @ 3A, 4V
15W
3MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
hot ZXTN25040DFHTA
Diodes Incorporated

TRANS NPN 40V 4A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 190mV @ 400mA, 4A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: 190MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad533.172
4A
40V
190mV @ 400mA, 4A
50nA (ICBO)
300 @ 10mA, 2V
1.25W
190MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
JANSD2N3636L
Microchip Technology

TRANS PNP 175V 1A TO5

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 175 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
package: -
Request a Quote
1 A
175 V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
BCP5416QTA
Diodes Incorporated

PWR MID PERF TRANSISTOR SOT223 T

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 2 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
package: -
Request a Quote
1 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
2 W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
JANKCBF2N3439
Microchip Technology

RH POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
package: -
Request a Quote
1 A
350 V
500mV @ 4mA, 50mA
2µA
40 @ 20mA, 10V
800 mW
-
-55°C ~ 200°C
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JAN2N3700UB-TR
Microchip Technology

TRANS NPN 80V 1A 3UB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
package: -
Request a Quote
1 A
80 V
500mV @ 50mA, 500mA
10nA
50 @ 500mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
DCP54-16-13
Diodes Incorporated

TRANS NPN 45V 1A SOT223-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
package: -
Request a Quote
1 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
1 W
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
CTLT853-M833S-BK
Central Semiconductor Corp

TRANS NPN 100V 6A TLM833S

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 340mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
  • Power - Max: 2.5 W
  • Frequency - Transition: 190MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: TLM833S
package: -
Request a Quote
6 A
100 V
340mV @ 500mA, 5A
10nA
100 @ 2A, 2V
2.5 W
190MHz
-65°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
TLM833S
FZT953QTA
Diodes Incorporated

PWR LOW SAT TRANSISTOR SOT223 T&

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 420mV @ 400mA, 4A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 1.6 W
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
package: -
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5 A
100 V
420mV @ 400mA, 4A
50nA
100 @ 1A, 1V
1.6 W
125MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
PBSS4350Z-ZLF
Nexperia USA Inc.

TRANS NPN 50V 3A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 2 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
package: -
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3 A
50 V
290mV @ 200mA, 2A
100nA (ICBO)
200 @ 1A, 2V
2 W
100MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2N3762
Microchip Technology

TRANS PNP 40V 1.5A TO39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 1.5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
package: -
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1.5 A
40 V
900mV @ 100mA, 1A
10µA (ICBO)
30 @ 1A, 1.5V
1 W
-
-55°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
2N4001
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100µA, 500µA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
package: -
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1 A
100 V
500mV @ 100µA, 500µA
-
-
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
JANKCAR2N3635
Microchip Technology

TRANS PNP 140V 1A TO39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
package: -
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1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)