Pagina 42 - Transistoren - Bipolair (BJT) - RF | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - Bipolair (BJT) - RF

Archief 1.633
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MMBTH81_F080
Fairchild/ON Semiconductor

TRANSISTOR RF PNP SOT-23

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad3.328
-
-
-
-
-
-
-
-
-
-
-
MRF555GT
Microsemi Corporation

RF NPN TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 470MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12.5dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad5.280
16V
470MHz
-
12.5dB
3W
50 @ 100mA, 5V
500mA
-
-
-
-
hot 2SC4227-T1-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
package: SC-70, SOT-323
Voorraad447.684
10V
7GHz
1.4dB @ 1GHz
12dB
150mW
40 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
NE68133-T1B-R33-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: TO-236-3, SC-59, SOT-23-3
Voorraad7.712
10V
9GHz
1.2dB @ 1GHz
13dB
200mW
50 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
PN5179_D27Z
Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad5.760
12V
2GHz
5dB @ 200MHz
15dB
350mW
25 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
NE85633L-A
CEL

TRANSISTOR NPN 1GHZ SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: TO-236-3, SC-59, SOT-23-3
Voorraad2.176
12V
7GHz
1.4dB ~ 2dB @ 1GHz
9dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NE696M01-A
CEL

TRANSISTOR NPN 2GHZ SOT-363

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.6dB @ 2GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad4.832
6V
14GHz
1.6dB @ 2GHz
-
150mW
80 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
KSC1730OTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 15V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad5.984
15V
1.1GHz
-
-
250mW
70 @ 5mA, 10V
50mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BF240_ND74Z
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 40V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad6.864
40V
1.1GHz
-
-
350mW
65 @ 1mA, 10V
50mA
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MPS3563G
ON Semiconductor

TRANS NPN RF SS 12V TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
  • Gain: 14dB @ 200MHz
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad4.320
12V
1.5GHz
6.5dB @ 60MHz
14dB @ 200MHz
350W
20 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
NE68030-T1
CEL

TRANS NPN 2GHZ SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.9dB @ 1GHz ~ 4GHz
  • Gain: 5.3dB ~ 12.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
package: SC-70, SOT-323
Voorraad2.928
10V
10GHz
1.5dB ~ 2.9dB @ 1GHz ~ 4GHz
5.3dB ~ 12.5dB
150mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
PH3135-65M
M/A-Com Technology Solutions

TRANSISTOR 65W 36V 3.10-3.50GHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.23dB ~ 9.09dB
  • Power - Max: 65W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 7.7A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad2.100
65V
-
-
8.23dB ~ 9.09dB
65W
-
7.7A
200°C (TJ)
-
-
-
MS1004
Microsemi Corporation

TRANS RF BIPO 270W 20A TO-220AC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 14.5dB
  • Power - Max: 330W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M177
  • Supplier Device Package: M177
package: M177
Voorraad6.848
55V
30MHz
-
14.5dB
330W
15 @ 10A, 6V
40A
200°C (TJ)
Chassis Mount
M177
M177
10A015
Microsemi Corporation

TRANS RF BIPO 6W 750MA 55FT2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 2.7GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB ~ 9.5dB
  • Power - Max: 6W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 750mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
package: 55FT
Voorraad5.120
24V
2.7GHz
-
9dB ~ 9.5dB
6W
20 @ 100mA, 5V
750mA
200°C (TJ)
Stud Mount
55FT
55FT
AT-31033-TR2G
Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
  • Gain: 9dB ~ 11dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 16mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: TO-236-3, SC-59, SOT-23-3
Voorraad4.432
5.5V
-
0.9dB ~ 1.2dB @ 900MHz
9dB ~ 11dB
150mW
70 @ 1mA, 2.7V
16mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MCH4020-TL-H
ON Semiconductor

TRANS BIPO NPN 150MA 8V MCPH4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 16GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17.5dB @ 1GHz
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: 4-MCPH
package: SC-82A, SOT-343
Voorraad4.832
8V
16GHz
1.2dB @ 1GHz
17.5dB @ 1GHz
400mW
60 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
4-MCPH
MAX2602ESA+
Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voorraad4.272
15V
1GHz
3.3dB @ 836MHz
11.6dB
6.4W
100 @ 250mA, 3V
1.2A
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
BFP540FESDH6327XTSA1
Infineon Technologies

TRANS RF NPN 5V 80MA 4TSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 30GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
  • Gain: 20dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
package: 4-SMD, Flat Leads
Voorraad6.608
5V
30GHz
0.9dB ~ 1.4dB @ 1.8GHz
20dB
250mW
50 @ 20mA, 3.5V
80mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
2SC5087YTE85LF
Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA SMQ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-61AA
  • Supplier Device Package: SMQ
package: SC-61AA
Voorraad6.112
12V
7GHz
1.1dB @ 1GHz
13dB
150mW
120 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-61AA
SMQ
BFR 93A E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain: 9.5dB ~ 14.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad28.236
12V
6GHz
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
9.5dB ~ 14.5dB
300mW
70 @ 30mA, 8V
90mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
2SC4618TLP
Rohm Semiconductor

TRANS RF NPN 25V 50MA SOT-416

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 300MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: EMT3
package: SC-75, SOT-416
Voorraad23.952
25V
300MHz
-
-
150mW
82 @ 1mA, 6V
50mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
EMT3
2SC3775-3-TB-E-ON
onsemi

NPN EPITAXIAL PLANAR SILICON

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 900MHz
  • Gain: 14dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
package: -
Request a Quote
12V
5GHz
1.5dB @ 900MHz
14dB
250mW
100 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
NESG340034-T1-A
Renesas Electronics Corporation

RF BIPOLAR TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SA1977-A
CEL

RF TRANS PNP 12V 8.5GHZ SOT23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: -
package: -
Request a Quote
12V
8.5GHz
1.5dB @ 1GHz
12dB
200mW
20 @ 20mA, 8V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
-
2SA1978-A
CEL

RF TRANS PNP 12V 5.5GHZ SOT23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: -
package: -
Request a Quote
12V
5.5GHz
2dB @ 1GHz
10dB
200mW
20 @ 15mA, 10V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
-
60168
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
CPH6001-TL-E
onsemi

RF TRANS NPN 12V 6.7GHZ PCP

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
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2SC2620QBTR-E
Renesas Electronics Corporation

RF SMALL SIGNAL BIPOLAR TRANSIST

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
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