Pagina 32 - Transistoren - Bipolair (BJT) - RF | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - Bipolair (BJT) - RF

Archief 1.633
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP 650F E6327
Infineon Technologies

TRANSISTOR RF NPN 4.5V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
  • Gain: 11dB ~ 21.5dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
package: 4-SMD, Flat Leads
Voorraad4.576
4.5V
42GHz
0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
11dB ~ 21.5dB
500mW
110 @ 80mA, 3V
150mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
hot 2SC5751-T2-A
CEL

RF TRANSISTOR NPN SOT-343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 16dB
  • Power - Max: 205mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
package: SOT-343F
Voorraad711.060
6V
15GHz
1.7dB @ 2GHz
16dB
205mW
75 @ 20mA, 3V
50mA
150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
hot 2SC5006-T1-A
CEL

RF TRANSISTOR NPN SOT-523

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
package: SOT-523
Voorraad562.704
12V
4.5GHz
1.2dB @ 1GHz
9dB
125mW
80 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
hot MS2201
Microsemi Corporation

TRANS RF BIPO 10W 250MA M220

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 10W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M220
  • Supplier Device Package: M220
package: M220
Voorraad16.476
45V
1.025GHz ~ 1.15GHz
-
9dB
10W
0.95 @ 10mA, 5V
250mA
200°C (TJ)
Chassis Mount
M220
M220
hot 2SC3932GTL
Panasonic Electronic Components

TRANS NPN 20VCEO 50MA SMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.6GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 20dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
package: SC-85
Voorraad213.600
20V
1.6GHz
-
20dB
150mW
800 @ 2mA, 10V
50mA
150°C (TJ)
Surface Mount
SC-85
SMini3-F2
AT-41486-TR2G
Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
  • Gain: 9dB ~ 18dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-86
  • Supplier Device Package: 86 Plastic
package: SOT-86
Voorraad2.000
12V
8GHz
1.4dB ~ 3dB @ 1GHz ~ 4GHz
9dB ~ 18dB
500mW
30 @ 10mA, 8V
60mA
150°C (TJ)
Surface Mount
SOT-86
86 Plastic
AT-42086-TR2G
Broadcom Limited

TRANS NPN BIPO 12V 80MA 86-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
  • Gain: 9dB ~ 13dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-86
  • Supplier Device Package: 86 Plastic
package: SOT-86
Voorraad4.832
12V
8GHz
1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
9dB ~ 13dB
500mW
30 @ 35mA, 8V
80mA
150°C (TJ)
Surface Mount
SOT-86
86 Plastic
hot AT-42010
Broadcom Limited

TRANS NPN BIPO 12V 80MA 100-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz
  • Gain: 10dB ~ 13.5dB
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD (100 mil)
  • Supplier Device Package: -
package: 4-SMD (100 mil)
Voorraad5.120
12V
8GHz
1.9dB ~ 3dB @ 2GHz ~ 4GHz
10dB ~ 13.5dB
600mW
30 @ 35mA, 8V
80mA
200°C (TJ)
Surface Mount
4-SMD (100 mil)
-
NE68039-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 11dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
package: TO-253-4, TO-253AA
Voorraad2.000
10V
10GHz
1.8dB @ 2GHz
11dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot KSC2755OMTF
Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 0.3dB @ 200MHz
  • Gain: 20dB ~ 23dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 3mA, 10V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
package: TO-236-3, SC-59, SOT-23-3
Voorraad1.300.860
30V
600MHz
0.3dB @ 200MHz
20dB ~ 23dB
150mW
90 @ 3mA, 10V
20mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FMMTH10TC
Diodes Incorporated

TRANSISTOR RF NPN SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 500MHz
  • Gain: -
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad5.360
25V
650MHz
3dB ~ 5dB @ 500MHz
-
330mW
60 @ 4mA, 10V
25mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
NE85633-T1B-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: TO-236-3, SC-59, SOT-23-3
Voorraad7.696
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MPS3563
ON Semiconductor

TRANS NPN RF SS 12V TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
  • Gain: 14dB @ 200MHz
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad3.472
12V
1.5GHz
6.5dB @ 60MHz
14dB @ 200MHz
350W
20 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
PH1090-550S
M/A-Com Technology Solutions

TRANSISTOR BIPOLAR 550W 1090MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.06dB
  • Power - Max: 550W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 28A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad4.064
80V
-
-
8.06dB
550W
-
28A
200°C (TJ)
Chassis Mount
-
-
2729-170
Microsemi Corporation

TRANS RF BIPO 570W 17A 55KS1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 2.7GHz ~ 2.9GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.2dB ~ 8.6dB
  • Power - Max: 570W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 60mA, 5V
  • Current - Collector (Ic) (Max): 17A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KS-1
  • Supplier Device Package: 55KS-1
package: 55KS-1
Voorraad2.016
65V
2.7GHz ~ 2.9GHz
-
8.2dB ~ 8.6dB
570W
18 @ 60mA, 5V
17A
200°C (TJ)
Chassis Mount
55KS-1
55KS-1
CM4957
Central Semiconductor Corp

RF TRANS PNP 25V 2.5GHZ TO-72

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 2.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 25dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
package: TO-206AF, TO-72-4 Metal Can
Voorraad2.416
25V
2.5GHz
-
25dB
300mW
20 @ 2mA, 10V
30mA
-65°C ~ 200°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
hot AT-31033-BLKG
Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
  • Gain: 9dB ~ 11dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 16mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: TO-236-3, SC-59, SOT-23-3
Voorraad109.200
5.5V
-
0.9dB ~ 1.2dB @ 900MHz
9dB ~ 11dB
150mW
70 @ 1mA, 2.7V
16mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot MRF428
M/A-Com Technology Solutions

TRANS RF NPN 55V 20A 211-11

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 15dB
  • Power - Max: 150W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
package: 211-11, Style 2
Voorraad5.760
55V
-
-
15dB
150W
10 @ 5A, 5V
20A
-
Chassis Mount
211-11, Style 2
211-11, Style 2
BFP 181 E7764
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
  • Gain: 17.5dB ~ 21dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
package: TO-253-4, TO-253AA
Voorraad7.152
12V
8GHz
0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
17.5dB ~ 21dB
175mW
70 @ 70mA, 8V
20mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
PG-SOT143-4
BFP450H6327XTSA1
Infineon Technologies

TRANS RF NPN 4.5V 100MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 24GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
package: SC-82A, SOT-343
Voorraad21.930
5V
24GHz
1.25dB @ 1.8GHz
15.5dB
450mW
60 @ 50mA, 4V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
hot LM3046MX/NOPB
Texas Instruments

IC TRANSISTOR ARRAY 14-SOIC

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.25dB @ 1kHz
  • Gain: -
  • Power - Max: 750mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
package: 14-SOIC (0.154", 3.90mm Width)
Voorraad128.064
15V
-
3.25dB @ 1kHz
-
750mW
40 @ 1mA, 3V
50mA
-40°C ~ 85°C (TA)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
NTE2634
NTE Electronics, Inc

T-PNP SI VIDEO DR 1GHZ TO-126

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 95V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
package: -
Request a Quote
95V
1.2GHz
-
-
3W
20 @ 50mA, 10V
300mA
175°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
CEN1107
Central Semiconductor Corp

TRANSISTOR NPN

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
12A02SS-TL-E
onsemi

BIP PNP 0.8A 12V

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC5624VH-TL-E
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 28GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1.8GHz
  • Gain: 18dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
package: -
Request a Quote
3.5V
28GHz
1.2dB @ 1.8GHz
18dB
100mW
80 @ 20mA, 2V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
2SC5509-A
CEL

RF TRANS NPN 3.3V 15GHZ SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.3V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
  • Gain: 14dB
  • Power - Max: 190mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: -
package: -
Request a Quote
3.3V
15GHz
1.2dB @ 2GHz
14dB
190mW
50 @ 10mA, 2V
100mA
150°C (TJ)
Surface Mount
SOT-343F
-
NTE319
NTE Electronics, Inc

RF TRANS NPN 20V TO72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 2.7dB @ 45MHz
  • Gain: 29dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
package: -
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20V
-
2.7dB @ 45MHz
29dB
175mW
20 @ 2mA, 10V
-
175°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
NTE395
NTE Electronics, Inc

RF TRANS PNP 25V 2.3GHZ TO72

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 2.3GHz
  • Noise Figure (dB Typ @ f): 2.5dB ~ 4dB @ 200MHz ~ 800MHz
  • Gain: 16dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
package: -
Request a Quote
25V
2.3GHz
2.5dB ~ 4dB @ 200MHz ~ 800MHz
16dB
225mW
20 @ 10mA, 10V
50mA
200°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72