Pagina 6 - Transistoren - Bipolair (BJT) - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - Bipolair (BJT) - Arrays

Archief 2.013
Pagina  6/72
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC857SE6327BTSA1
Infineon Technologies

TRANS 2PNP 45V 0.1A SOT363

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
package: 6-VSSOP, SC-88, SOT-363
Voorraad6.528
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
hot 2N2453A
Central Semiconductor Corp

TRANS 2NPN 50MA 50V TO78-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 600mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
package: TO-78-6 Metal Can
Voorraad3.696
50mA
50V
-
-
150 @ 1mA, 5V
600mW
60MHz
-
Through Hole
TO-78-6 Metal Can
TO-78-6
ZDT1049TC
Diodes Incorporated

TRANS 2NPN 25V 5A SM8

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 4A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 2.75W
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8
package: SOT-223-8
Voorraad5.168
5A
25V
220mV @ 50mA, 4A
10nA
300 @ 1A, 2V
2.75W
180MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SM8
hot NP0450100A
Panasonic Electronic Components

TRANS 2NPN 50V 0.1A SSSMINI

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V
  • Power - Max: 125mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
package: SOT-963
Voorraad168.600
100mA
50V
300mV @ 10mA, 100mA
100µA
180 @ 2mA, 10V
125mW
150MHz
125°C (TJ)
Surface Mount
SOT-963
SSSMini6-F1
JANTXV2N2919U
Microsemi Corporation

TRANS 2NPN 60V 0.03A

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-SMD
package: 3-SMD, No Lead
Voorraad5.648
30mA
60V
300mV @ 100µA, 1mA
10µA (ICBO)
150 @ 1mA, 5V
350mW
-
200°C (TJ)
Surface Mount
3-SMD, No Lead
3-SMD
2N2060L
Microsemi Corporation

TRANS 2NPN 60V 0.5A TO78

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Power - Max: 2.12W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
package: TO-78-6 Metal Can
Voorraad7.792
500mA
60V
300mV @ 5mA, 50mA
10µA (ICBO)
50 @ 10mA, 5V
2.12W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
hot 2N2919
Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
package: TO-78-6 Metal Can
Voorraad7.980
30mA
60V
300mV @ 100µA, 1mA
10µA (ICBO)
150 @ 1mA, 5V
350mW
-
200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
NSVT3906DXV6T1G
ON Semiconductor

TRANS 2PNP 40V 0.2A SOT563

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: SOT-563, SOT-666
Voorraad4.800
200mA
40V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
500mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
PBSS3515VS,115
Nexperia USA Inc.

TRANS 2PNP 15V 0.5A SOT666

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: 280MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
package: SOT-563, SOT-666
Voorraad3.664
500mA
15V
250mV @ 50mA, 500mA
100nA (ICBO)
150 @ 100mA, 2V
200mW
280MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666
hot FFB3904
Fairchild/ON Semiconductor

TRANS 2NPN 40V 0.2A SC70-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
package: 6-TSSOP, SC-88, SOT-363
Voorraad302.424
200mA
40V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
300mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot STA473A
Sanken

TRANS 4NPN DARL 100V 2A 10-SIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 4V
  • Power - Max: 4W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
package: 10-SIP
Voorraad13.824
2A
100V
1.5V @ 2mA, 1A
10µA (ICBO)
2000 @ 1A, 4V
4W
50MHz
150°C (TJ)
Through Hole
10-SIP
10-SIP
PBSS5230PAP,115
Nexperia USA Inc.

TRANS 2PNP 30V 2A 6HUSON

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 420mv @ 100mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 95MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
package: 6-UDFN Exposed Pad
Voorraad5.296
2A
30V
420mv @ 100mA, 2A
100nA (ICBO)
160 @ 1A, 2V
510mW
95MHz
150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
CPH5524-TL-E
ON Semiconductor

TRANS NPN/PNP 50V 3A 5CPH

  • Transistor Type: NPN, PNP (Emitter Coupled)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 1.2W
  • Frequency - Transition: 380MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: 5-CPH
package: SOT-23-5 Thin, TSOT-23-5
Voorraad4.096
3A
50V
240mV @ 100mA, 2A
1µA (ICBO)
200 @ 100mA, 2V
1.2W
380MHz
150°C (TJ)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
5-CPH
hot SMA5106
Sanken

TRANS 4NPN DARL 120V 5A

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
  • Power - Max: 5W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
package: 12-SIP, Exposed Tab
Voorraad123.612
5A
120V
1.5V @ 3mA, 3A
10µA (ICBO)
2000 @ 3A, 2V
5W
-
150°C (TJ)
Through Hole
12-SIP, Exposed Tab
12-SIP
PMBTA42DS,125
Nexperia USA Inc.

TRANS 2NPN 300V 0.1A 6TSOP

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
  • Power - Max: 420mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
package: SC-74, SOT-457
Voorraad26.322
100mA
300V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
420mW
50MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
ULN2004ANE4
Texas Instruments

50-V, 7-CH DARLINGTON TRANSISTOR

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
package: -
Request a Quote
500mA
50V
1.6V @ 500µA, 350mA
50µA
-
-
-
150°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
2N5794UC-TR
Microchip Technology

DUAL SMALL-SIGNAL BJT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: UC
package: -
Request a Quote
600mA
40V
900mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
600mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
UC
JANSF2N6987
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1.5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
package: -
Request a Quote
600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
1.5W
-
-65°C ~ 200°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
SG2813L
Microchip Technology

DRIVER - MEDIUM CURRENT ARRAY, H

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-CLCC
  • Supplier Device Package: 20-CLCC (8.89x8.89)
package: -
Request a Quote
600mA
50V
1.9V @ 600µA, 500mA
-
-
-
-
-55°C ~ 125°C (TA)
Surface Mount
20-CLCC
20-CLCC (8.89x8.89)
BC846BPNH-QF
Nexperia USA Inc.

TRANS NPN/PNP 65V 0.1A 6TSSOP

  • Transistor Type: 1 NPN, 1 PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
package: -
Request a Quote
100mA
65V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
200mW
100MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
SG2813J-883B
Microchip Technology

DRIVER - MEDIUM CURRENT ARRAY, H

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 18-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 18-CERDIP
package: -
Request a Quote
600mA
50V
1.9V @ 600µA, 500mA
-
-
-
-
-55°C ~ 125°C (TA)
Through Hole
18-CDIP (0.300", 7.62mm)
18-CERDIP
LB1234-E
onsemi

TRANS DARLINGTON NPN 50V 0.5A

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
HN1A01FU-Y-LXHF
Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + PNP TR VCEO:-50

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: -
Voorraad17.934
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200mW
80MHz
-
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
CA3083M
Intersil

GEN PURP NPN TRANSISTOR ARRAYS

  • Transistor Type: 5 NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 3V
  • Power - Max: 500mW
  • Frequency - Transition: 450MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
package: -
Request a Quote
100mA
15V
700mV @ 5mA, 50mA
10µA
40 @ 50mA, 3V
500mW
450MHz
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
DMMT3904W-AU_R1_000A1
Panjit International Inc.

SOT-363, TRANSISTOR

  • Transistor Type: 2 NPN (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 225mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
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200mA
40V
300mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
225mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
JANS2N5794U
Microchip Technology

DUAL SMALL-SIGNAL BJT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: U
package: -
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600mA
40V
900mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
600mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
U
JANTXV2N5795
Microchip Technology

PNP TRANSISTOR

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
package: -
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600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
40 @ 150mA, 10V
600mW
-
-65°C ~ 175°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
2N2977
Microchip Technology

DUAL SMALL-SIGNAL BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
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