Pagina 933 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten

Onderdeelnummer	Fabrikant	Omschrijving	package	Voorraad	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CLH05,LMBJQ(O	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	package: L-FLAT?	Voorraad2.832	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
VS-30BQ100GPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 3.0A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: 115pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 175°C	package: DO-214AB, SMC	Voorraad270.000	100V	3A	790mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	115pF @ 5V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 175°C
VS-1N5820	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Capacitance @ Vr, F: 350pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	package: DO-201AD, Axial	Voorraad4.448	20V	3A	475mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 20V	350pF @ 5V, 1MHz	Through Hole	DO-201AD, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
RGP10J-M3/54	Vishay Semiconductor Diodes Division	DIODE SW 1A 600V 250NS DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	package: DO-204AL, DO-41, Axial	Voorraad7.136	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4448	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	package: DO-204AH, DO-35, Axial	Voorraad897.000	75V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
UMA5819	Microsemi Corporation	DIODE SCHOTTKY 40V 1A ULTRAMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Ultramite? Supplier Device Package: Ultramite? Operating Temperature - Junction: -50°C ~ 125°C	package: Ultramite?	Voorraad2.064	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	Ultramite?	Ultramite?	-50°C ~ 125°C
50WQ06FNTR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 5.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5.5A Voltage - Forward (Vf) (Max) @ If: 570mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 60V Capacitance @ Vr, F: 360pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	package: TO-252-3, DPak (2 Leads + Tab), SC-63	Voorraad34.260	60V	5.5A	570mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 60V	360pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
JANTXV1N5811US	Microsemi Corporation	DIODE GEN PURP 150V 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	package: SQ-MELF, B	Voorraad4.176	150V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
FESB16JTHE3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 145pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Voorraad6.448	600V	16A	1.5V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	145pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
ES01FV0	Sanken	DIODE GEN PURP 1.5KV 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 1500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	package: Axial	Voorraad7.712	1500V	500mA	2V @ 500mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1500V	-	Through Hole	Axial	-	-40°C ~ 150°C
B260AE-13	Diodes Incorporated	SCHOTTKY RECTIFIER SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	package: DO-214AC, SMA	Voorraad2.000	60V	2A	650mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	75pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
HS1AL RQG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 50V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	package: DO-219AB	Voorraad2.416	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ACGRA4006-HF	Comchip Technology	DIODE GEN PURP 800V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	package: DO-214AC, SMA	Voorraad5.520	800V	1A (DC)	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
DA3J101A0L	Panasonic Electronic Components	DIODE GEN PURP 80V 100MA SMINI3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 100nA @ 80V Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B Operating Temperature - Junction: 150°C (Max)	package: SC-85	Voorraad49.254	80V	100mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3ns	100nA @ 80V	1.2pF @ 0V, 1MHz	Surface Mount	SC-85	SMini3-F2-B	150°C (Max)
SB07-03C-TB-E	ON Semiconductor	DIODE SCHOTTKY 30V 700MA 3CP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 80µA @ 15V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP Operating Temperature - Junction: -55°C ~ 125°C	package: TO-236-3, SC-59, SOT-23-3	Voorraad1.261.788	30V	700mA	550mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	80µA @ 15V	25pF @ 10V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP	-55°C ~ 125°C
BA159-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C	package: DO-204AL, DO-41, Axial	Voorraad144.192	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	12pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 125°C
S4M-R7	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	package: -	Request a Quote	1000 V	4A	1.15 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1000 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RFN2LAM4STFTR	Rohm Semiconductor	DIODE GEN PURP 400V 1.5A PMDTM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	package: -	Voorraad18.795	400 V	1.5A	1.2 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 400 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
CD214A-B220R	Bourns Inc.	DIODE SCHOTTKY 20V 2A 2SMD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 20 V Capacitance @ Vr, F: 115pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -55°C ~ 125°C	package: -	Voorraad34.584	20 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 20 V	115pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2-SMD	-55°C ~ 125°C
D6001N50TXPSA1	Infineon Technologies	DIODE GEN PURP 5KV 8010A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 5000 V Current - Average Rectified (Io): 8010A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 mA @ 5000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	package: -	Request a Quote	5000 V	8010A	1.3 V @ 6000 A	Standard Recovery >500ns, > 200mA (Io)	-	400 mA @ 5000 V	-	Chassis Mount	DO-200AE	-	-40°C ~ 160°C
HS2GAH	Taiwan Semiconductor Corporation	50NS, 1.5A, 400V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	package: -	Voorraad45.000	400 V	1.5A	1.3 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RFUH20TJ6SGC9	Rohm Semiconductor	DIODE GP 600V 20A TO220ACFP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C	package: -	Voorraad2.526	600 V	20A	2.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	TO-220ACFP	150°C
V2P22LHM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 200V 1.6A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 200 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 175°C	package: -	Voorraad113.478	200 V	1.6A	760 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	40 µA @ 200 V	90pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-40°C ~ 175°C
BAS16THR	Nexperia USA Inc.	DIODE GP 100V 215MA TO236AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 215mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 500 nA @ 80 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Operating Temperature - Junction: 175°C (Max)	package: -	Voorraad177	100 V	215mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	500 nA @ 80 V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB	175°C (Max)
EGP31G-E3-C	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 4 µA @ 400 V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	package: -	Request a Quote	400 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	4 µA @ 400 V	48pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
SK215A	SMC Diode Solutions	DIODE SCHOTTKY 150V 2A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 150 V Capacitance @ Vr, F: 240pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	package: -	Voorraad16.809	150 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 150 V	240pF @ 5V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
R3705	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
DD1200	Diotec Semiconductor	DIODE GEN PURP 12KV 20MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 12000 V Current - Average Rectified (Io): 20mA Voltage - Forward (Vf) (Max) @ If: 40 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 12 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 150°C	package: -	Request a Quote	12000 V	20mA	40 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	150 ns	5 µA @ 12 V	-	Through Hole	Axial	Axial	-50°C ~ 150°C

CLH05,LMBJQ(O

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 5A L-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 150°C

package: L-FLAT?

Voorraad2.832

200V

5A (DC)

0.98V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

-

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 150°C

VS-30BQ100GPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3.0A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: 115pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 175°C

package: DO-214AB, SMC

Voorraad270.000

100V

3A

790mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

115pF @ 5V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 175°C

VS-1N5820

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Capacitance @ Vr, F: 350pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

package: DO-201AD, Axial

Voorraad4.448

20V

3A

475mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 20V

350pF @ 5V, 1MHz

Through Hole

DO-201AD, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

RGP10J-M3/54

Vishay Semiconductor Diodes Division

DIODE SW 1A 600V 250NS DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

package: DO-204AL, DO-41, Axial

Voorraad7.136

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

1N4448

Microsemi Corporation

DIODE GEN PURP 75V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C

package: DO-204AH, DO-35, Axial

Voorraad897.000

75V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

25nA @ 20V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 150°C

UMA5819

Microsemi Corporation

DIODE SCHOTTKY 40V 1A ULTRAMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Ultramite?
Supplier Device Package: Ultramite?
Operating Temperature - Junction: -50°C ~ 125°C

package: Ultramite?

Voorraad2.064

40V

1A

600mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

Ultramite?

-50°C ~ 125°C

50WQ06FNTR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5.5A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5.5A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 60V
Capacitance @ Vr, F: 360pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

package: TO-252-3, DPak (2 Leads + Tab), SC-63

Voorraad34.260

60V

5.5A

570mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 60V

360pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

JANTXV1N5811US

Microsemi Corporation

DIODE GEN PURP 150V 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

package: SQ-MELF, B

Voorraad4.176

150V

3A

875mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 150V

60pF @ 10V, 1MHz

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 175°C

FESB16JTHE3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 16A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voorraad6.448

600V

16A

1.5V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 600V

145pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

ES01FV0

Sanken

DIODE GEN PURP 1.5KV 500MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 1500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

package: Axial

Voorraad7.712

1500V

500mA

2V @ 500mA

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 1500V

-

Through Hole

Axial

-

-40°C ~ 150°C

B260AE-13

Diodes Incorporated

SCHOTTKY RECTIFIER SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

package: DO-214AC, SMA

Voorraad2.000

60V

2A

650mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 60V

75pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

HS1AL RQG

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 50V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

package: DO-219AB

Voorraad2.416

50V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

20pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

ACGRA4006-HF

Comchip Technology

DIODE GEN PURP 800V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

package: DO-214AC, SMA

Voorraad5.520

800V

1A (DC)

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

DA3J101A0L

Panasonic Electronic Components

DIODE GEN PURP 80V 100MA SMINI3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 100nA @ 80V
Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2-B
Operating Temperature - Junction: 150°C (Max)

package: SC-85

Voorraad49.254

80V

100mA (DC)

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

3ns

100nA @ 80V

1.2pF @ 0V, 1MHz

Surface Mount

SC-85

SMini3-F2-B

150°C (Max)

SB07-03C-TB-E

ON Semiconductor

DIODE SCHOTTKY 30V 700MA 3CP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 80µA @ 15V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C

package: TO-236-3, SC-59, SOT-23-3

Voorraad1.261.788

30V

700mA

550mV @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

10ns

80µA @ 15V

25pF @ 10V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

-55°C ~ 125°C

BA159-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C

package: DO-204AL, DO-41, Axial

Voorraad144.192

1000V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

12pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 125°C

S4M-R7

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 4A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

package: -

Request a Quote

1000 V

4A

1.15 V @ 4 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 1000 V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

RFN2LAM4STFTR

Rohm Semiconductor

DIODE GEN PURP 400V 1.5A PMDTM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

package: -

Voorraad18.795

400 V

1.5A

1.2 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

1 µA @ 400 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

CD214A-B220R

Bourns Inc.

DIODE SCHOTTKY 20V 2A 2SMD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -55°C ~ 125°C

package: -

Voorraad34.584

20 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 20 V

115pF @ 4V, 1MHz

Surface Mount

2-SMD, No Lead

2-SMD

-55°C ~ 125°C

D6001N50TXPSA1

Infineon Technologies

DIODE GEN PURP 5KV 8010A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 5000 V
Current - Average Rectified (Io): 8010A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 mA @ 5000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 160°C

package: -

Request a Quote

5000 V

8010A

1.3 V @ 6000 A

Standard Recovery >500ns, > 200mA (Io)

-

400 mA @ 5000 V

-

Chassis Mount

DO-200AE

-

-40°C ~ 160°C

HS2GAH

Taiwan Semiconductor Corporation

50NS, 1.5A, 400V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

package: -

Voorraad45.000

400 V

1.5A

1.3 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 400 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

RFUH20TJ6SGC9

Rohm Semiconductor

DIODE GP 600V 20A TO220ACFP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C

package: -

Voorraad2.526

600 V

20A

2.8 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

80 ns

10 µA @ 600 V

-

Through Hole

TO-220-2 Full Pack

TO-220ACFP

150°C

V2P22LHM3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 1.6A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C

package: -

Voorraad113.478

200 V

1.6A

760 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

40 µA @ 200 V

90pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-40°C ~ 175°C

BAS16THR

Nexperia USA Inc.

DIODE GP 100V 215MA TO236AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 215mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 175°C (Max)

package: -

Voorraad177

100 V

215mA

1.25 V @ 150 mA

Fast Recovery =< 500ns, > 200mA (Io)

4 ns

500 nA @ 80 V

1.5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

175°C (Max)

EGP31G-E3-C

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 4 µA @ 400 V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

package: -

Request a Quote

400 V

3A

1.25 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

4 µA @ 400 V

48pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

SK215A

SMC Diode Solutions

DIODE SCHOTTKY 150V 2A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
Capacitance @ Vr, F: 240pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

package: -

Voorraad16.809

150 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 150 V

240pF @ 5V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

R3705

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

package: -

Request a Quote

-

DD1200

Diotec Semiconductor

DIODE GEN PURP 12KV 20MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 12000 V
Current - Average Rectified (Io): 20mA
Voltage - Forward (Vf) (Max) @ If: 40 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 12 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 150°C

package: -

Request a Quote

12000 V

20mA

40 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

150 ns

5 µA @ 12 V

-

Through Hole

Axial

-50°C ~ 150°C