Pagina 923 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  923/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SF10DG-B
Diodes Incorporated

DIODE GEN PURP 200V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-204AL, DO-41, Axial
Voorraad6.352
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
75pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
VS-8EWS10STRPBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad2.400
1000V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 1000V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
-55°C ~ 150°C
RGP10GHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad5.552
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
BA159GPHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad3.216
1000V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
CPD76X-1N5817-CT
Central Semiconductor Corp

DIODE SCHKY 20V 1A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -65°C ~ 150°C
package: Die
Voorraad5.360
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-
Surface Mount
Die
Die
-65°C ~ 150°C
MBR60100R
GeneSiC Semiconductor

DIODE SCHOTTKY REV 100V DO5

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-203AB, DO-5, Stud
Voorraad3.872
100V
60A
840mV @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 20V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 150°C
GIB1403HE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad3.840
150V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
SBYV28-150-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3.5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-201AD, Axial
Voorraad3.744
150V
3.5A
1.1V @ 3.5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 150V
20pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
BYW52-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2A SOD57

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4µs
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-57, Axial
  • Supplier Device Package: SOD-57
  • Operating Temperature - Junction: -55°C ~ 175°C
package: SOD-57, Axial
Voorraad3.008
200V
2A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
4µs
1µA @ 200V
-
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
BYM10-200HE3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-213AB, MELF (Glass)
Voorraad6.672
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
hot SS13-E3/5AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -65°C ~ 125°C
package: DO-214AC, SMA
Voorraad59.796
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-65°C ~ 125°C
RSFAL RTG
TSC America Inc.

DIODE, FAST, 0.5A, 50V, 150NS, S

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-219AB
Voorraad7.504
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
BAS70-00-HE3-18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 70V 200MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: 125°C (Max)
package: TO-236-3, SC-59, SOT-23-3
Voorraad2.544
70V
200mA
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
100nA @ 50V
2pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
125°C (Max)
hot RF05VAM2STR
Rohm Semiconductor

DIODE SUP FAST 200V 500MA TUMD2M

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: TUMD2M
  • Operating Temperature - Junction: 150°C (Max)
package: 2-SMD, Flat Lead
Voorraad36.000
200V
500mA
980mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 200V
-
Surface Mount
2-SMD, Flat Lead
TUMD2M
150°C (Max)
GB02SLT12-220
GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 2A TO220AC

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 1200V
  • Capacitance @ Vr, F: 138pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-220-2
Voorraad23.010
1200V
2A
1.8V @ 2A
No Recovery Time > 500mA (Io)
0ns
50µA @ 1200V
138pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
hot S320
Fairchild/ON Semiconductor

DIODE SCHOTTKY 200V 3A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 7µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-214AA, SMB
Voorraad46.680
200V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
7µA @ 200V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 150°C
PMEG2002AESF,315
Nexperia USA Inc.

DIODE SCHOTTKY 20V 200MA 2DSN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.9ns
  • Current - Reverse Leakage @ Vr: 45µA @ 20V
  • Capacitance @ Vr, F: 25pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: DSN0603-2
  • Operating Temperature - Junction: 125°C (Max)
package: 0201 (0603 Metric)
Voorraad78.804
20V
200mA
420mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
1.9ns
45µA @ 20V
25pF @ 1V, 1MHz
Surface Mount
0201 (0603 Metric)
DSN0603-2
125°C (Max)
PMEG6010CEH-QX
Nexperia USA Inc.

DIODE SCHOTTKY 60V 1A SOD123F

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 60 V
  • Capacitance @ Vr, F: 60pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: 150°C
package: -
Voorraad5.154
60 V
1A
660 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 60 V
60pF @ 1V, 1MHz
Surface Mount
SOD-123F
SOD-123F
150°C
JANTX1N6910UTK2
Microchip Technology

DIODE GEN PURP 15V 25A THINKEY2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.2 mA @ 15 V
  • Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
15 V
25A
520 mV @ 25 A
No Recovery Time > 500mA (Io)
-
1.2 mA @ 15 V
2000pF @ 5V, 1MHz
Surface Mount
ThinKey™2
ThinKey™2
-65°C ~ 150°C
MGR1604-BP
Micro Commercial Co

DIODE GEN PURP 400V 16A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 16 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
400 V
16A
1.1 V @ 16 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 400 V
100pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
BY133GP-AP
Micro Commercial Co

DIODE GEN PURP 1.3KV 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1300 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
1300 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1300 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
R25160
Microchip Technology

RECTIFIER

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
1600 V
25A
1.1 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1600 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
NSVR0240V2T5G
onsemi

DIODE SCHOTTKY 40V 250MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 40 V
  • Capacitance @ Vr, F: 4pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad24.009
40 V
250mA
700 mV @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
3 ns
10 µA @ 40 V
4pF @ 5V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
-55°C ~ 150°C
C6D30065H
Wolfspeed, Inc.

30A, 650V SILICON CARBIDE SCHOTT

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad1.332
-
-
-
-
-
-
-
-
-
-
-
SGLWH
Taiwan Semiconductor Corporation

0.8A, 400V, STANDARD RECOVERY RE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad60.000
400 V
800mA
1.1 V @ 800 mA
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 400 V
7pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 150°C
UES1103SM-1
Microchip Technology

DIODE GP 150V 2.5A A SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A, SQ-MELF
  • Operating Temperature - Junction: -
package: -
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150 V
2.5A
980 mV @ 2.5 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
2 µA @ 150 V
-
Surface Mount
SQ-MELF, A
A, SQ-MELF
-
RJU6053TDPP-AJ-T2
Renesas Electronics Corporation

DIODE GP 600V 20A TO220FP-2L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FP-2L
  • Operating Temperature - Junction: 150°C (Max)
package: -
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600 V
20A
3 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220FP-2L
150°C (Max)
SDM02U30LP3Q-7B
Diodes Incorporated

Schottky Diode X3-DFN0603-2 T&R

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: X3-DFN0603-2
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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30 V
100mA
370 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
4 µA @ 30 V
-
Surface Mount
0201 (0603 Metric)
X3-DFN0603-2
-55°C ~ 150°C