Pagina 833 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  833/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GP10-4002EHE3/53
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad6.608
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 100V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MURS360HE3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-214AB, SMC
Voorraad2.544
600V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 175°C
BAS29_D87Z
Fairchild/ON Semiconductor

DIODE GEN PURP 120V 200MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 90V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Operating Temperature - Junction: 150°C (Max)
package: TO-236-3, SC-59, SOT-23-3
Voorraad7.344
120V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 90V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
150°C (Max)
JANTXV1N5554
Microsemi Corporation

DIODE GEN PURP 1KV 5A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
package: B, Axial
Voorraad6.592
1000V
5A
1.3V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 1000V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
1N2131A
GeneSiC Semiconductor

DIODE GEN PURP 200V 60A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 200°C
package: DO-203AB, DO-5, Stud
Voorraad7.488
200V
60A
1.1V @ 60A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 200°C
UPS5100/TR13
Microsemi Corporation

DIODE SCHOTTKY 100V 5A POWERMITE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 810mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite
  • Operating Temperature - Junction: -55°C ~ 125°C
package: DO-216AA
Voorraad5.040
100V
5A
810mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
150pF @ 4V, 1MHz
Surface Mount
DO-216AA
Powermite
-55°C ~ 125°C
hot UG8DT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-220-2
Voorraad4.544
200V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
RM 10BV1
Sanken

DIODE GEN PURP 800V 1.2A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -40°C ~ 150°C
package: Axial
Voorraad7.616
800V
1.2A
910mV @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Through Hole
Axial
Axial
-40°C ~ 150°C
BYG10KHE3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.5A SMA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4µs
  • Current - Reverse Leakage @ Vr: 1µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad3.424
800V
1.5A
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
4µs
1µA @ 800V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BY227MGPHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.25KV 2A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1250V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1250V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -
package: DO-204AC, DO-15, Axial
Voorraad4.656
1250V
2A
1.5V @ 5A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 1250V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-
SA2B-M3/61T
Vishay Semiconductor Diodes Division

DIODE GPP 2A 100V DO-214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 3µA @ 100V
  • Capacitance @ Vr, F: 11pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad3.568
100V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
3µA @ 100V
11pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BAS285-GS08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOD80

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.3µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: SOD-80 QuadroMELF
  • Operating Temperature - Junction: 125°C (Max)
package: SOD-80 Variant
Voorraad5.232
30V
200mA
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
2.3µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SOD-80 Variant
SOD-80 QuadroMELF
125°C (Max)
1N4936G A0G
TSC America Inc.

DIODE, FAST, 1A, 400V, 200NS, DO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-204AL, DO-41, Axial
Voorraad7.584
400V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 400V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SK55AFL-TP
Micro Commercial Co

DIODE SCHOTTKY 50V 5A DO221AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: 210pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SMA-FL)
  • Operating Temperature - Junction: -55°C ~ 125°C
package: DO-221AC, SMA Flat Leads
Voorraad3.856
50V
5A
700mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
210pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SMA-FL)
-55°C ~ 125°C
CDBB2150-HF
Comchip Technology

DIODE SCHOTTKY 150V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 150V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -50°C ~ 175°C
package: DO-214AA, SMB
Voorraad4.704
150V
2A (DC)
875mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 150V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-50°C ~ 175°C
BAS21H,115
Nexperia USA Inc.

DIODE GEN PURP 200V 200MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 200V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: 150°C (Max)
package: SOD-123F
Voorraad25.812
200V
200mA (DC)
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
SOD-123F
SOD-123F
150°C (Max)
1N4006-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-204AL, DO-41, Axial
Voorraad42.264
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
FR3A
Diotec Semiconductor

IC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -50°C ~ 150°C
package: -
Request a Quote
50 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 50 V
-
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-50°C ~ 150°C
SBR6025
Microchip Technology

DIODE SCHOTTKY 25V 60A DO5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 25 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 mA @ 25 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
25 V
60A
600 mV @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 mA @ 25 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-55°C ~ 150°C
MBRS240LT3H
onsemi

DIODE SCHOTTKY 40V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 mA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
40 V
2A
430 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 mA @ 40 V
-
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
BYV96E-T-R
EIC SEMICONDUCTOR INC.

DIODE AVALANCHE 1KV 1.5A DO15

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: 175°C
package: -
Request a Quote
1000 V
1.5A
1.6 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
5 µA @ 1000 V
-
Through Hole
DO-204AC, DO-15, Axial
DO-15
175°C
IDC40S120C5X7SA1
Infineon Technologies

SIC CHIP

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
VS-80-7601
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
ES3JB-HF
Comchip Technology

DIODE GP 600V 3A SMB/DO-214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB/DO-214AA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad31.782
600 V
3A
1.68 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB/DO-214AA
-55°C ~ 150°C
JAN1N5811US-TR
Microchip Technology

DIODE GEN PURP 150V 6A B SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
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150 V
6A
875 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
5 µA @ 150 V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
SURA8215T3G-GA01
onsemi

DIODE GEN PURP 150V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
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150 V
2A
950 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
2 µA @ 150 V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
PMEG045T100EPDAZ
Nexperia USA Inc.

DIODE SCHOTTKY 45V 14A CFP15

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 14A
  • Voltage - Forward (Vf) (Max) @ If: 480 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 45 V
  • Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: CFP15
  • Operating Temperature - Junction: 175°C (Max)
package: -
Voorraad1.017
45 V
14A
480 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
80 µA @ 45 V
1400pF @ 1V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
CFP15
175°C (Max)
SS215BF-HF
Comchip Technology

DIODE SCHOTTKY 150V 2A SMBF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 150 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBF
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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150 V
2A
950 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 150 V
110pF @ 4V, 1MHz
Surface Mount
DO-221AA, SMB Flat Leads
SMBF
-55°C ~ 150°C