Pagina 83 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  83/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
VS-8EWS12STRPBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad6.352
1200V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 1200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-55°C ~ 150°C
SD453N16S30PC
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 450A B8

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 450A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: B-8
  • Supplier Device Package: B-8
  • Operating Temperature - Junction: -40°C ~ 150°C
package: B-8
Voorraad5.040
1600V
450A
1.85V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
3µs
50mA @ 1600V
-
Chassis, Stud Mount
B-8
B-8
-40°C ~ 150°C
VS-SD403C16S15C
Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 430A D200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 430A
  • Voltage - Forward (Vf) (Max) @ If: 1.83V @ 1350A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 35mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, PUK
  • Operating Temperature - Junction: -
package: DO-200AA, A-PUK
Voorraad3.408
1600V
430A
1.83V @ 1350A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
35mA @ 1600V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, PUK
-
hot UGB8BTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad18.852
100V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
EU 2AV0
Sanken

DIODE GEN PURP 600V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
package: Axial
Voorraad2.592
600V
1A
1.4V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
10µA @ 600V
-
Through Hole
Axial
-
-40°C ~ 150°C
B0540WF RHG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 510mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -65°C ~ 150°C
package: SOD-123F
Voorraad7.424
40V
500mA
510mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
20µA @ 40V
-
Surface Mount
SOD-123F
SOD-123F
-65°C ~ 150°C
MMBD914-HE3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 200MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 5µA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: 150°C (Max)
package: TO-236-3, SC-59, SOT-23-3
Voorraad2.560
100V
200mA
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
5µA @ 75V
4pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
150°C (Max)
SF34G A0G
TSC America Inc.

DIODE, SUPER FAST, 3A, 200V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-201AD, Axial
Voorraad4.384
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
V8KM60DU-M3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 4A DUAL FLATP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 60V
  • Capacitance @ Vr, F: 500pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
package: 8-PowerTDFN
Voorraad4.960
60V
8A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 60V
500pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 175°C
hot SB120
Fairchild/ON Semiconductor

DIODE SCHOTTKY 20V 1A DO41

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 125°C
package: DO-204AL, DO-41, Axial
Voorraad7.520
20V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 125°C
CD0603-B0240
Bourns Inc.

DIODE SCHOTTKY 40V 200MA 0603

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 30V
  • Capacitance @ Vr, F: 12pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0603 (1608 Metric)
  • Supplier Device Package: 0603
  • Operating Temperature - Junction: -40°C ~ 125°C
package: 0603 (1608 Metric)
Voorraad72.876
40V
200mA
550mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
10µA @ 30V
12pF @ 10V, 1MHz
Surface Mount
0603 (1608 Metric)
0603
-40°C ~ 125°C
PMEG2020EJ-ZLX
Nexperia USA Inc.

PMEG2020EJ - Rectifier Diode, Sc

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 20 V
  • Capacitance @ Vr, F: 50pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
  • Operating Temperature - Junction: 150°C
package: -
Request a Quote
20 V
2A
525 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 20 V
50pF @ 5V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323F
150°C
SCS320AJTLL
Rohm Semiconductor

DIODE SIL CARBIDE 650V 20A LPTL

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPTL
  • Operating Temperature - Junction: 175°C (Max)
package: -
Voorraad2.505
650 V
20A
1.5 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
1000pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPTL
175°C (Max)
GS1J
SMC Diode Solutions

DIODE GEN PURP 600V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
600 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2.5 µs
5 µA @ 600 V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-65°C ~ 175°C
1PS79SB30-QF
Nexperia USA Inc.

1PS79SB30-Q/SOD523/SC-79

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 25 V
  • Capacitance @ Vr, F: 20pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: 150°C
package: -
Request a Quote
40 V
200mA
600 mV @ 200 mA
Small Signal =< 200mA (Io), Any Speed
-
500 nA @ 25 V
20pF @ 1V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
150°C
RFC02MM2STR
Rohm Semiconductor

DIODE GEN PURP 200V 200MA PMDU

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C
package: -
Voorraad26.775
200 V
200mA
750 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
35 ns
1 µA @ 200 V
-
Surface Mount
SOD-123F
PMDU
150°C
ERT1DAFC_R1_00001
Panjit International Inc.

DIODE GEN PURP 200V 1A SMAF-C

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF-C
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad9.000
200 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 200 V
20pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF-C
-55°C ~ 150°C
GS1008FL_R1_00001
Panjit International Inc.

DIODE GEN PURP 800V 1A SOD123FL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -50°C ~ 150°C
package: -
Voorraad1.995
800 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 800 V
4pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-50°C ~ 150°C
JANTX1N5417US-TR
Microchip Technology

DIODE GEN PURP 200V 3A D-5B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, E
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
200 V
3A
1.5 V @ 9 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
1 µA @ 200 V
-
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 175°C
1N3141R
Solid State Inc.

DIODE GEN PURP REV 150V 100A DO8

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-8
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
150 V
100A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 150 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-8
-65°C ~ 200°C
MER2DAL-AU_R1_007A1
Panjit International Inc.

DIODE GEN PURP 200V 2A SOD123FL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad51.303
200 V
2A
950 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 200 V
25pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 175°C
SS13E-TP
Micro Commercial Co

DIODE SCHOTTKY 30V 1A SMAE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMAE
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Request a Quote
30 V
1A
600 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
110pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMAE
-55°C ~ 125°C
JANTXV1N6642UB-TR
Microchip Technology

DIODE GEN PURP 75V 300MA UB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 75 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
75 V
300mA
1.2 V @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
20 ns
500 nA @ 75 V
-
Surface Mount
3-SMD, No Lead
UB
-65°C ~ 175°C
1SR154-400TFTE25
Rohm Semiconductor

ROHM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 150°C
package: -
Request a Quote
400 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 400 V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C
XBS203V19R-G
Torex Semiconductor Ltd

DIODE SCHOTTKY 30V 2A SMA-XG

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 390 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70 ns
  • Current - Reverse Leakage @ Vr: 3 mA @ 30 V
  • Capacitance @ Vr, F: 280pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA-XG
  • Operating Temperature - Junction: 125°C
package: -
Voorraad300
30 V
2A
390 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
3 mA @ 30 V
280pF @ 1V, 1MHz
Surface Mount
DO-214AC, SMA
SMA-XG
125°C
HRW0502ATR-E
Renesas Electronics Corporation

RECTIFIER DIODE, SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
DTH3006D
Diodes Incorporated

DIODE GEN PURP 600V 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 160pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO220AC (Type WX)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Request a Quote
600 V
30A
2.4 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
100 µA @ 600 V
160pF @ 4V, 1MHz
Through Hole
TO-220-2
TO220AC (Type WX)
-55°C ~ 175°C
1N1400
Solid State Inc.

DIODE GEN PURP 300V 100A DO8

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 300 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-8
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
300 V
100A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 300 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-8
-65°C ~ 200°C