Pagina 788 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  788/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CDBMTS120-HF
Comchip Technology

DIODE SCHOTTKY 20V 1A SOD123S

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: 120pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123S
  • Supplier Device Package: SOD-123S
  • Operating Temperature - Junction: -55°C ~ 125°C
package: SOD-123S
Voorraad7.024
20V
1A (DC)
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
120pF @ 4V, 1MHz
Surface Mount
SOD-123S
SOD-123S
-55°C ~ 125°C
LSM345JE3
Microsemi Corporation

DIODE SCHOTTKY 45V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AB, SMC
Voorraad5.168
45V
3A
520mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 45V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 150°C
R6202630XXOO
Powerex Inc.

DIODE MODULE 2.6KV 300A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2600V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6µs
  • Current - Reverse Leakage @ Vr: 50mA @ 2600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -
package: DO-200AA, A-PUK
Voorraad2.272
2600V
300A
1.7V @ 800A
Standard Recovery >500ns, > 200mA (Io)
6µs
50mA @ 2600V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, R62
-
VS-40EPS08-M3
Vishay Semiconductor Diodes Division

DIODE INPUT 40 TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -40°C ~ 150°C
package: TO-247-2
Voorraad2.096
800V
40A
1V @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 800V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
NHPV15S600G
ON Semiconductor

DIODE GEN PURP 600V 15A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 3.2V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 60µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-220-2
Voorraad2.848
600V
15A
3.2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
60µA @ 600V
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 150°C
SR1060HC0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-220-3
Voorraad2.608
60V
10A
700mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
VT2080SHM3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 20A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-220-3
Voorraad3.440
80V
20A
920mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 80V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
VF10150S-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 150V ITO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-220-3 Isolated Tab
Voorraad5.632
150V
10A
1.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 150V
-
Through Hole
TO-220-3 Isolated Tab
ITO-220AB
-55°C ~ 150°C
MUR4L60HA0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 4A, 600V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-201AD, Axial
Voorraad7.088
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
65pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
HER601G A0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 6A, 50V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
package: R6, Axial
Voorraad3.392
50V
6A
1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
SE10PGHM3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 780ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-220AA
Voorraad2.672
400V
1A
1.05V @ 1A
Standard Recovery >500ns, > 200mA (Io)
780ns
5µA @ 400V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
HER108G R1G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 1000V

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-204AL, DO-41, Axial
Voorraad2.176
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SS16LHM2G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 6

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-219AB
Voorraad5.120
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S1K M2G
TSC America Inc.

DIODE, 1A, 800V, DO-214AC (SMA)

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 800V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-214AC, SMA
Voorraad7.984
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 800V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
hot CMPD2004 TR
Central Semiconductor Corp

DIODE GEN PURP 240V 200MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 240V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 240V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -65°C ~ 150°C
package: TO-236-3, SC-59, SOT-23-3
Voorraad32.400
240V
200mA
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 240V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-65°C ~ 150°C
hot RS1J
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad8.851.632
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
VS-E5TH1512S2LHM3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 15A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad2.520
1200 V
15A
2.5 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
95 ns
50 µA @ 1200 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 175°C
V12P22HM3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 3.2A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 200 V
  • Capacitance @ Vr, F: 720pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
package: -
Request a Quote
200 V
3.2A
900 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 200 V
720pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
VS-E5PW6006LHN3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 60A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 42 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad4.635
600 V
60A
2.6 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
42 ns
25 µA @ 600 V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
IDDD04G65C6XTMA1
Infineon Technologies

DIODE SIL CARB 650V 13A HDSOP-10

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 13A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 14 µA @ 420 V
  • Capacitance @ Vr, F: 205pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 10-PowerSOP Module
  • Supplier Device Package: PG-HDSOP-10-1
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad14.805
650 V
13A
-
No Recovery Time > 500mA (Io)
0 ns
14 µA @ 420 V
205pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
CLLR1-04-TR
Central Semiconductor Corp

DIODE GEN PURP 400V 1A MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
400 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 400 V
-
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 175°C
WNSC6D106506Q
WeEn Semiconductors

WNSC6D10650/TO-220AC/STANDARD MA

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 500pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C
package: -
Request a Quote
650 V
10A
1.4 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
500pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C
ES1DV
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad44.910
200 V
1A
920 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
15 ns
5 µA @ 200 V
17pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S8CJHM3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 8A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 79pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad16.212
600 V
8A
985 mV @ 8 A
Standard Recovery >500ns, > 200mA (Io)
4 µs
10 µA @ 600 V
79pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
MUR860-BP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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600 V
8A
1.5 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 600 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
BAV21WS-AQ
Diotec Semiconductor

SMALL SIGNAL DIODE SOD-323F 250V

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 200 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 150°C
package: -
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200 V
200mA
1.25 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
50 ns
100 nA @ 200 V
5pF @ 0V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323
150°C
MCL4448
Diotec Semiconductor

DIODE SOD-106 100V 0.15A 4NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 75 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: MicroMelf
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad7.410
75 V
150mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
5 µA @ 75 V
4pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
MicroMelf
-55°C ~ 175°C
1N1304
Solid State Inc.

DIODE GEN PURP 200V 40A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
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200 V
40A
1.19 V @ 90 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 200 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 200°C