Pagina 748 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  748/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
R6020225HSYA
Powerex Inc.

DIODE GEN PURP 200V 250A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1µs
  • Current - Reverse Leakage @ Vr: 50mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -45°C ~ 150°C
package: DO-205AB, DO-9, Stud
Voorraad4.720
200V
250A
2V @ 800A
Standard Recovery >500ns, > 200mA (Io)
1µs
50mA @ 200V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-45°C ~ 150°C
10ETF04
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 10A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 145ns
  • Current - Reverse Leakage @ Vr: 100µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 150°C
package: TO-220-2
Voorraad5.136
400V
10A
1.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
145ns
100µA @ 400V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
VB30100SG-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 100V TO-263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 350µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -40°C ~ 150°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad2.224
100V
30A
1V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
350µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-40°C ~ 150°C
FES8HTHE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-220-2
Voorraad5.248
500V
8A
1.5V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 500V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
BYW29-150-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
package: TO-220-2
Voorraad3.296
150V
8A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 150V
45pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
LXA03D530
Power Integrations

DIODE X-SER 530V 3A 8SOIC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 530V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.71V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 34.3ns
  • Current - Reverse Leakage @ Vr: 250µA @ 530V
  • Capacitance @ Vr, F: 15pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) 7 leads
  • Supplier Device Package: 8-SO
  • Operating Temperature - Junction: 150°C (Max)
package: 8-SOIC (0.154", 3.90mm Width) 7 leads
Voorraad5.984
530V
3A
1.71V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
34.3ns
250µA @ 530V
15pF @ 10V, 1MHz
Surface Mount
8-SOIC (0.154", 3.90mm Width) 7 leads
8-SO
150°C (Max)
AU2PG-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-277, 3-PowerDFN
Voorraad2.960
400V
1.6A (DC)
1.9V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SS2P2L-M3/85A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 2A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 20V
  • Capacitance @ Vr, F: 130pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-220AA
Voorraad4.192
20V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
130pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
MUR210RLG
ON Semiconductor

DIODE GEN PURP 100V 2A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 940mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad3.472
100V
2A
940mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
hot MPG06M-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 600ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
package: MPG06, Axial
Voorraad12.168
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
600ns
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
NRVHP140SFT3G
ON Semiconductor

DIODE GEN PURP 400V 1A SOD123FL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad2.048
-
-
-
-
-
-
-
-
-
-
-
SS14LHM2G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 125°C
package: DO-219AB
Voorraad7.712
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SD101BW-E3-18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 400MW 50V SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 30mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 200nA @ 40V
  • Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
package: SOD-123
Voorraad3.712
50V
30mA (DC)
950mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 40V
2.1pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
SS110 R3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad2.656
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S1M R3G
TSC America Inc.

DIODE, 1A, 1000V, DO-214AC (SMA)

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-214AC, SMA
Voorraad6.784
1000V
1A
1.1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
1.5µs
1µA @ 1000V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
GB01SLT06-214
GeneSiC Semiconductor

DIODE SCHOTTKY 650V 1A DO214AA

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 1A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 10µA @ 6.5V
  • Capacitance @ Vr, F: 76pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-214AA, SMB
Voorraad7.856
650V
1A (DC)
2V @ 1A
No Recovery Time > 500mA (Io)
0ns
10µA @ 6.5V
76pF @ 1V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
hot VS-60APU04PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85ns
  • Current - Reverse Leakage @ Vr: 50µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-247-3
Voorraad5.744
400V
60A
1.25V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
50µA @ 400V
-
Through Hole
TO-247-3
TO-247AC
-55°C ~ 175°C
hot DB2J20100L
Panasonic Electronic Components

DIODE SCHOTTKY 20V 500MA SMINI2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4.3ns
  • Current - Reverse Leakage @ Vr: 10µA @ 10V
  • Capacitance @ Vr, F: 12pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SMini2-F5-B
  • Operating Temperature - Junction: 125°C (Max)
package: SC-90, SOD-323F
Voorraad169.200
20V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
4.3ns
10µA @ 10V
12pF @ 10V, 1MHz
Surface Mount
SC-90, SOD-323F
SMini2-F5-B
125°C (Max)
NRVRGF1K
onsemi

DIODE GEN PURP 800V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
800 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 800 V
8.5pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
ER3K
Diotec Semiconductor

DIODE SUPERFAST SMC 800V

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -50°C ~ 150°C
package: -
Request a Quote
800 V
3A
1.7 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 800 V
-
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-50°C ~ 150°C
VS-100BGQ015
Vishay General Semiconductor - Diodes Division

SCHOTTKY RECT 15V 100A POWLRTAB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 100 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 18 mA @ 15 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: PowerTab™, PowIRtab™
  • Supplier Device Package: PowIRtab™
  • Operating Temperature - Junction: -
package: -
Voorraad1.056
15 V
100A
460 mV @ 100 A
Fast Recovery =< 500ns, > 200mA (Io)
-
18 mA @ 15 V
-
Chassis Mount
PowerTab™, PowIRtab™
PowIRtab™
-
FR305BULK
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
600 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
10 µA @ 600 V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
DST8100S-A
Littelfuse Inc.

DIODE SCHOTTKY 100V 8A TO277B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 70 µA @ 100 V
  • Capacitance @ Vr, F: 542pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277B
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad40.302
100 V
8A
680 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
70 µA @ 100 V
542pF @ 5V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 150°C
BAS316-AU_R1_000A1
Panjit International Inc.

DIODE GEN PURP 100V 250MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 100 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad155.763
100 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
500 nA @ 100 V
1.5pF @ 0V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323
-55°C ~ 150°C
FR3K-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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800 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
10 µA @ 800 V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
10A02GP-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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100 V
10A
1.2 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 100 V
150pF @ 4V, 1MHz
Through Hole
R-6, Axial
R-6
-55°C ~ 150°C
1N4148W-AU_R2_000A1
Panjit International Inc.

SOD-123, SWITCHING

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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75 V
200mA
1.25 V @ 150 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
2.5 µA @ 75 V
1.5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C
BY12
Diotec Semiconductor

DIODE GEN PURP 12KV 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 12000 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 10 V @ 500 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 12000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -50°C ~ 150°C
package: -
Voorraad7.875
12000 V
500mA
10 V @ 500 mA
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
1 µA @ 12000 V
-
Through Hole
Axial
Axial
-50°C ~ 150°C