Pagina 423 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  423/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IRD3CH42DD6
Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad3.328
-
-
-
-
-
-
-
-
-
-
-
SD830-B
Diodes Incorporated

DIODE SCHOTTKY 30V 8A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: 550pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-201AD, Axial
Voorraad7.360
30V
8A
700mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
550pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
DSB1A50
Microsemi Corporation

DIODE SCHOTTKY 50V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -
package: DO-204AL, DO-41, Axial
Voorraad6.544
50V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-
MBR7H45HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
package: TO-220-2
Voorraad4.592
45V
7.5A
630mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
GP10FHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad2.640
300V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 300V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
B330A-13
Diodes Incorporated

DIODE SCHOTTKY 30V 3A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad3.104
30V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
hot MURB1520
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 15A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 175°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad24.504
200V
15A
1.05V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 175°C
hot BAV21WS-7
Diodes Incorporated

DIODE GEN PURP 200V 200MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 200V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -65°C ~ 150°C
package: SC-76, SOD-323
Voorraad160.044
200V
200mA
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-65°C ~ 150°C
R7001003XXUA
Powerex Inc.

DIODE GEN PURP 1KV 300A DO200

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 9µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -65°C ~ 200°C
package: DO-200AA, A-PUK
Voorraad3.728
1000V
300A
2.15V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
9µs
50mA @ 1000V
-
Chassis, Stud Mount
DO-200AA, A-PUK
DO-200AA, R62
-65°C ~ 200°C
FR16JR02
GeneSiC Semiconductor

DIODE GEN PURP REV 600V 16A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-203AA, DO-4, Stud
Voorraad2.656
600V
16A
900mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
25µA @ 100V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
VBT2080S-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 80V TO-263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad2.448
80V
20A
920mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 80V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
MURS260-M3/5BT
Vishay Semiconductor Diodes Division

DIODE RECT 2A 600V 50NS DO-214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-214AA, SMB
Voorraad2.640
600V
2A
1.45V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 175°C
HS1FL RFG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 300V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-219AB
Voorraad5.136
300V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SBR1045SD1-T
Diodes Incorporated

DIODE SBR 45V 10A DO201AD

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 450µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-201AD, Axial
Voorraad7.408
45V
10A
550mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
450µA @ 45V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
VS-25F60
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 25A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 78A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-203AA, DO-4, Stud
Voorraad5.648
600V
25A
1.3V @ 78A
Standard Recovery >500ns, > 200mA (Io)
-
12mA @ 600V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 175°C
BYC20-600,127
WeEn Semiconductors

DIODE GEN PURP 500V 20A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 2.9V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
package: TO-220-2
Voorraad50.046
500V
20A
2.9V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
200µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
GS1000FL_R1_00001
Panjit International Inc.

DIODE GEN PURP 50V 1A SOD123FL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 50 V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -50°C ~ 150°C
package: -
Request a Quote
50 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 50 V
4pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-50°C ~ 150°C
1N4719
Solid State Inc.

DIODE GEN PURP 50V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 9.4 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
50 V
3A
1 V @ 9.4 A
Standard Recovery >500ns, > 200mA (Io)
-
500 µA @ 50 V
-
Through Hole
Axial
Axial
-65°C ~ 175°C
ER3JHE3-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
600 V
3A
1.7 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
SF38-TP
Micro Commercial Co

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Request a Quote
600 V
3A
1.7 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
UG1007_HF-A52
Diodes Incorporated

ULTRAFAST RECOVERY RECTIFIER DO-

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1 kV
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
1000 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 1 kV
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
SF56
TE Connectivity

DO-201AD 400V 5.0A Diodes Rect

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MSASC25H30KV-TR
Microchip Technology

DIODE POWER SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
12F30
Solid State Inc.

DIODE GEN PURP 12A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12 A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
-
-
1.2 V @ 12 A
-
-
-
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
S3J-AU_R1_000A1
Panjit International Inc.

DIODE GEN PURP 600V 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 53pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
600 V
3A
1.2 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 600 V
53pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
1N4148WS-EVL-CT
Venkel

Rectifier,SOD-323,75V,200mA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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75 V
200mA
1.25 V @ 150 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
2.5 µA @ 75 V
1.5pF @ 0V, 1MHz
Surface Mount
SC-90, SOD-323F
-
-55°C ~ 150°C
UES1106SM-1
Microchip Technology

DIODE GEN PURP 400V 2A A SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A, SQ-MELF
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
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400 V
2A
1.25 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 400 V
-
Surface Mount
SQ-MELF, A
A, SQ-MELF
-55°C ~ 175°C
1N6765R
Microchip Technology

DIODE GEN PURP 200V 12A TO254

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 300pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
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200 V
12A
1.05 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
300pF @ 5V, 1MHz
Through Hole
TO-254-3, TO-254AA
TO-254
-55°C ~ 175°C