Pagina 412 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  412/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GDP36Z060B
Global Power Technologies Group

DIODE SCHOTTKY 600V 36A TO247-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 36A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 36A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 1460pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 135°C
package: TO-247-2
Voorraad5.744
600V
36A (DC)
1.7V @ 36A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
1460pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
hot US1G-13
Diodes Incorporated

DIODE GEN PURP 400V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-214AC, SMA
Voorraad780.000
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
D650N08T
Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 600V 721A

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad5.024
-
-
-
-
-
-
-
-
-
-
-
JANTXV1N5618US
Microsemi Corporation

DIODE GEN PURP 600V 1A D5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 500nA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 200°C
package: SQ-MELF, A
Voorraad7.872
600V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 600V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
ES1CLHRQG
TSC America Inc.

DIODE, SUPER FAST, 1A, 150V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-219AB
Voorraad6.992
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SF66G A0G
TSC America Inc.

DIODE, SUPER FAST, 6A, 400V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-201AD, Axial
Voorraad4.832
400V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
hot S3A-E3/57T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AB, SMC
Voorraad122.400
50V
3A
1.15V @ 2.5A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
10µA @ 50V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
hot STTH1512G
STMicroelectronics

DIODE GEN PURP 1.2KV 15A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 105ns
  • Current - Reverse Leakage @ Vr: 15µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 175°C (Max)
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad8.592
1200V
15A
2.1V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
105ns
15µA @ 1200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
175°C (Max)
SK23TR
SMC Diode Solutions

DIODE SCHOTTKY 30V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AA, SMB
Voorraad4.112
30V
2A
550mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 150°C
CDBZC0130L-HF
Comchip Technology

DIODE SCHOTTKY 30V 100MA 0201

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 370mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 7µA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: 0201/DFN0603
  • Operating Temperature - Junction: -40°C ~ 125°C
package: 0201 (0603 Metric)
Voorraad107.418
30V
100mA
370mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
7µA @ 10V
-
Surface Mount
0201 (0603 Metric)
0201/DFN0603
-40°C ~ 125°C
hot SBR3A40SAF-13
Diodes Incorporated

DIODE SBR 40V 3A SMAFLAT

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-214AC, SMA
Voorraad222.600
40V
3A
530mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
FFH50US60S-F085
onsemi

DIODE GEN PURP 600V 50A TO247-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.69 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 163 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Request a Quote
600 V
50A
1.69 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
163 ns
100 µA @ 600 V
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
M1022LC120
IXYS

DIODE GEN PURP 1.2KV 1022A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 1022A
  • Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 125°C
package: -
Request a Quote
1200 V
1022A
1.85 V @ 2050 A
Standard Recovery >500ns, > 200mA (Io)
3 µs
100 mA @ 1200 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 125°C
VS-MURB820-1HM3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 8A TO262

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Request a Quote
200 V
8A
975 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 200 V
-
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262
-55°C ~ 175°C
BAT760-QX
Nexperia USA Inc.

BAT760-Q/SOD323/SOD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 15 V
  • Capacitance @ Vr, F: 19pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 125°C
package: -
Request a Quote
20 V
1A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 15 V
19pF @ 5V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
125°C
1SS400S9TE61
Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SMD24PL-TPS06
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: 210pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -65°C ~ 125°C
package: -
Request a Quote
40 V
2A
500 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
210pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-65°C ~ 125°C
FR301G
Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
50 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 50 V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SDM02U30LP3-7B-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: X3-DFN0603-2
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
30 V
100mA
370 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
4 µA @ 30 V
-
Surface Mount
0201 (0603 Metric)
X3-DFN0603-2
-65°C ~ 150°C
RB540VM-40TE-17
Rohm Semiconductor

DIODE SCHOTTKY 40V 200MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 150°C
package: -
Voorraad9.000
40 V
200mA
710 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
15 µA @ 40 V
-
Surface Mount
SC-90, SOD-323F
UMD2
150°C
CMMR1-02-TR-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 200V 1A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 6pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Voorraad30.798
200 V
1A
1.1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 200 V
6pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-65°C ~ 150°C
688-18
Microchip Technology

DIODE GEN PURP 18KV 350MA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 18000 V
  • Current - Average Rectified (Io): 350mA
  • Voltage - Forward (Vf) (Max) @ If: 30 V @ 400 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 18000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
18000 V
350mA
30 V @ 400 mA
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
2 µA @ 18000 V
-
Chassis Mount
Module
-
-65°C ~ 150°C
V2PM10L-M3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 1.9A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1.9A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 5 V
  • Capacitance @ Vr, F: 195pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -40°C ~ 175°C
package: -
Request a Quote
100 V
1.9A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 5 V
195pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-40°C ~ 175°C
BAS16WQ-7-F
Diodes Incorporated

DIODE GEN PURP 75V 150MA SOT323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
75 V
150mA
1.25 V @ 150 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
1 µA @ 75 V
2pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-65°C ~ 150°C
BAT54AW-RFG
Taiwan Semiconductor Corporation

SOT-323, 30V, 0.2A, SCHOTTKY DIO

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: 125°C
package: -
Voorraad9.000
30 V
200mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
10pF @ 1V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
125°C
S20150
Microchip Technology

STD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
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HS5B-V6G
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 5A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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100 V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 100 V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
CRS10I30A-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A S-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 390 mV @ 700 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 µA @ 30 V
  • Capacitance @ Vr, F: 50pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C
package: -
Voorraad2.025
30 V
1A
390 mV @ 700 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
60 µA @ 30 V
50pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C