Pagina 342 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  342/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RGP10AHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad3.280
50V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
QRS1240T30
Powerex Inc.

DIODE MODULE 1.2KV 263A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 263A
  • Voltage - Forward (Vf) (Max) @ If: 3.5V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 1mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
package: Module
Voorraad3.472
1200V
263A
3.5V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
1mA @ 1200V
-
Chassis Mount
Module
Module
-
JANTXV1N3595AUS
Microsemi Corporation

DIODE GEN PURP 125V 150MA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 2nA @ 125V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-213AA
Voorraad6.736
125V
150mA
920mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
3µs
2nA @ 125V
-
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
SF3002PT C0G
TSC America Inc.

DIODE, SUPER FAST, 30A, 100V, 35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 175pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (TO-3P)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-247-3
Voorraad6.592
100V
30A
950mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
175pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
MBR40150PTE3/TU
Microsemi Corporation

DIODE SCHOTTKY 40A 150V TO-247AD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad6.256
-
-
-
-
-
-
-
-
-
-
-
SF62G A0G
TSC America Inc.

DIODE, SUPER FAST, 6A, 100V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-201AD, Axial
Voorraad2.064
100V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
P600G-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 6A P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 150°C
package: P600, Axial
Voorraad2.000
400V
6A
900mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
5µA @ 400V
150pF @ 4V, 1MHz
Through Hole
P600, Axial
P600
-50°C ~ 150°C
ES2FHE3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AA, SMB
Voorraad2.160
300V
2A
1.1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
15pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
EGL41AHE3/97
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-213AB, MELF (Glass)
Voorraad3.232
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
20pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
SURS8210T3G-VF01
ON Semiconductor

DIODE GEN PURP 100V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 940mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -60°C ~ 175°C
package: DO-214AA, SMB
Voorraad5.312
100V
2A
940mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 50V
-
Surface Mount
DO-214AA, SMB
SMB
-60°C ~ 175°C
EGP10C-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 22pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-204AL, DO-41, Axial
Voorraad3.200
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
22pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
ES1BLHRQG
TSC America Inc.

DIODE, SUPER FAST, 1A, 100V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-219AB
Voorraad5.632
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
BAS116 RFG
TSC America Inc.

DIODE, SWITCHING & ARRAY, 0.2A,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 3ns
  • Current - Reverse Leakage @ Vr: 5nA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-236-3, SC-59, SOT-23-3
Voorraad2.144
75V
200mA
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
3ns
5nA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 150°C
SD125SC150A.T
SMC Diode Solutions

DIODE SCHOTTKY 150V 15A DIE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 890mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 150V
  • Capacitance @ Vr, F: 500pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: 200°C (Max)
package: Die
Voorraad7.020
150V
15A
890mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 150V
500pF @ 5V, 1MHz
Surface Mount
Die
Die
200°C (Max)
hot PDS835L-13
Diodes Incorporated

DIODE SCHOTTKY 35V 8A POWERDI5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 510mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.4mA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI? 5
  • Operating Temperature - Junction: -65°C ~ 125°C
package: PowerDI? 5
Voorraad887.964
35V
8A
510mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.4mA @ 35V
-
Surface Mount
PowerDI? 5
PowerDI? 5
-65°C ~ 125°C
SBRT2M10LP-7
Diodes Incorporated

DIODE SBR 10V 2A 3DFN

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 10V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 400mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN
  • Supplier Device Package: X1-DFN1411-3
  • Operating Temperature - Junction: -55°C ~ 150°C
package: 3-UDFN
Voorraad6.048
10V
2A
400mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
250µA @ 10V
-
Surface Mount
3-UDFN
X1-DFN1411-3
-55°C ~ 150°C
V2PM12L-M3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 120V 1.8A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io): 1.8A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 120 V
  • Capacitance @ Vr, F: 180pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -40°C ~ 175°C
package: -
Request a Quote
120 V
1.8A
620 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 120 V
180pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-40°C ~ 175°C
1N5617E3-TR
Microchip Technology

DIODE GEN PURP 400V 1A A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 400 V
  • Capacitance @ Vr, F: 35pF @ 12V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
400 V
1A
800 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
500 nA @ 400 V
35pF @ 12V, 1MHz
Through Hole
A, Axial
A, Axial
-65°C ~ 175°C
SF12-TP
Micro Commercial Co

DIODE GEN PURP 100V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Request a Quote
100 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 100 V
40pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 125°C
EGL34DHE3_A-H
Vishay General Semiconductor - Diodes Division

DIODE GP 200V 500MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
200 V
500mA
1.25 V @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 200 V
7pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
CDS4454-1
Microchip Technology

SIGNAL OR COMPUTER DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RL106GP-TP
Micro Commercial Co

DIODE GEN PURP 800V 1A A-405

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: A-405
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
800 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 800 V
15pF @ 4V, 1MHz
Through Hole
Axial
A-405
-55°C ~ 150°C
RB068LB100TBR1
Rohm Semiconductor

SUPER LOW IR, 100V 2A, SMBP, SCH

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 810 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMBP
  • Operating Temperature - Junction: 175°C
package: -
Voorraad8.961
100 V
2A
810 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5 µA @ 100 V
-
Surface Mount
DO-214AA, SMB
SMBP
175°C
TST20U60CW
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 10A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
60 V
10A
540 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
CDBDSC3650-G
Comchip Technology

DIODE SIL CARBIDE 650V 11A DPAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 11A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad168
650 V
11A
1.7 V @ 3 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
181pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-55°C ~ 175°C
NXPSC10650B6J
WeEn Semiconductors

DIODE SIL CARBIDE 650V 10A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 650 V
  • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 175°C (Max)
package: -
Voorraad6.870
650 V
10A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
250 µA @ 650 V
300pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
175°C (Max)
DD171N16KKHOSA1
Infineon Technologies

DIODE MODULE DK

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
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-
-
-
-
-
-
-
-
-
-
-
PG201_R2_00001
Panjit International Inc.

DIODE GEN PURP 100V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
100 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 100 V
25pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C