Pagina 316 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  316/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
BYW76RAS15-10-PH
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A SOD64

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
package: SOD-64, Axial
Voorraad2.032
600V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
STTH1R04
STMicroelectronics

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: 175°C (Max)
package: DO-204AL, DO-41, Axial
Voorraad2.704
400V
1A
1.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 400V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
175°C (Max)
hot MA27D2700L
Panasonic Electronic Components

DIODE SCHOTTKY 20V 100MA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 300nA @ 10V
  • Capacitance @ Vr, F: 11pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: SSSMini2-F2
  • Operating Temperature - Junction: 150°C (Max)
package: 2-SMD, Flat Lead
Voorraad162.000
20V
100mA
580mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
1ns
300nA @ 10V
11pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
SSSMini2-F2
150°C (Max)
VS-MBR350
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A C16

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 730mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600µA @ 50V
  • Capacitance @ Vr, F: 190pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: C-16, Axial
  • Supplier Device Package: C-16
  • Operating Temperature - Junction: -40°C ~ 150°C
package: C-16, Axial
Voorraad7.856
50V
3A
730mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
600µA @ 50V
190pF @ 4V, 1MHz
Through Hole
C-16, Axial
C-16
-40°C ~ 150°C
R7220808ESOO
Powerex Inc.

DIODE MODULE 800V 800A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 800A
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 50mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
package: DO-200AB, B-PUK
Voorraad4.640
800V
800A
1.65V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
2µs
50mA @ 800V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
VS-60APF06PBF
Vishay Semiconductor Diodes Division

DIODE INPUT 60A 600V TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 180ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
package: TO-247-3
Voorraad6.272
600V
60A
1.3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
100µA @ 600V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
HSM340GE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 3A 40V SMCG

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad2.304
-
-
-
-
-
-
-
-
-
-
-
hot STTH20P035FP
STMicroelectronics

DIODE GEN PURP 350V 20A TO220FP

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad38.580
-
-
-
-
-
-
-
-
-
-
-
BYWB29-150HE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad3.792
150V
8A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 150V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
SF45GHR0G
TSC America Inc.

DIODE, SUPER FAST, 4A, 300V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-201AD, Axial
Voorraad7.280
300V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N4937E-E3/53
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -
package: DO-204AL, DO-41, Axial
Voorraad3.664
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
12pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-
S1AFJ-M3/6B
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO221AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.47µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SlimSMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-221AC, SMA Flat Leads
Voorraad3.472
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.47µs
5µA @ 600V
7.9pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SlimSMA)
-55°C ~ 150°C
PMEG4020ETR,115
Nexperia USA Inc.

DIODE SCHOTTKY 40V 2A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Capacitance @ Vr, F: 95pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: CFP3
  • Operating Temperature - Junction: 175°C (Max)
package: SOD-123W
Voorraad2.352
40V
2A
490mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
95pF @ 10V, 1MHz
Surface Mount
SOD-123W
CFP3
175°C (Max)
ES1K-TP
Micro Commercial Co

DIODE GEN PURP 800V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (HSMA)
  • Operating Temperature - Junction: -50°C ~ 150°C
package: DO-214AC, SMA
Voorraad2.336
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
-
Surface Mount
DO-214AC, SMA
DO-214AC (HSMA)
-50°C ~ 150°C
STPS3L45AF
STMicroelectronics

DIODE SCHOTTKY 45V 3A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat
  • Operating Temperature - Junction: 150°C (Max)
package: DO-221AC, SMA Flat Leads
Voorraad3.328
45V
3A
570mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 45V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat
150°C (Max)
1N2244
Microchip Technology

DIODE GEN PURP 1.2KV 5A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
1200 V
5A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1200 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
SL12HE3_B-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 20V 1.5A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 445 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Request a Quote
20 V
1.5A
445 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 20 V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
VSS8D5M12HM3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTT 100V 2.2A SLIMSMAW

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2.2A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 350 µA @ 120 V
  • Capacitance @ Vr, F: 460pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SlimSMAW (DO-221AD)
  • Operating Temperature - Junction: -40°C ~ 175°C
package: -
Voorraad19.044
100 V
2.2A
620 mV @ 2.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
350 µA @ 120 V
460pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SlimSMAW (DO-221AD)
-40°C ~ 175°C
S50460
Microchip Technology

DIODE GP 600V 300A DO205AB DO9

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB (DO-9)
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
600 V
300A
1.25 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
75 µA @ 600 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-205AB (DO-9)
-65°C ~ 200°C
ER5A-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -50°C ~ 150°C
package: -
Request a Quote
50 V
5A
1 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 50 V
100pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-50°C ~ 150°C
US1M-AQ
Diotec Semiconductor

DIODE GEN PURP 1KV 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA/DO-214AC
  • Operating Temperature - Junction: -50°C ~ 150°C
package: -
Voorraad43.200
1000 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 1000 V
-
Surface Mount
DO-214AC, SMA
SMA/DO-214AC
-50°C ~ 150°C
ES3D-V7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
200 V
3A
900 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
20 ns
10 µA @ 200 V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ISL9R3060G2-F085
onsemi

DIODE GEN PURP 600V 30A TO247-2

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad714
600 V
30A
2.4 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
100 µA @ 600 V
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
SMS560-3G
Diotec Semiconductor

SCHOTTKY MELF 60V 5A 150C

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF DO-213AB
  • Operating Temperature - Junction: -50°C ~ 150°C
package: -
Request a Quote
60 V
5A
550 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 60 V
-
Surface Mount
DO-213AB, MELF
MELF DO-213AB
-50°C ~ 150°C
SS24HM3_A-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
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40 V
2A
500 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 µA @ 40 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 150°C
SSB44HM3_A-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 4A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Voorraad18.900
40 V
4A
490 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 µA @ 40 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 150°C
STPS160AFN
STMicroelectronics

DIODE SCHOTTKY 60V 1A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat Notch
  • Operating Temperature - Junction: 150°C
package: -
Voorraad19.461
60 V
1A
670 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
4 µA @ 60 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat Notch
150°C
JAN1N6305
Microchip Technology

DIODE GEN PURP 100V 70A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
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100 V
70A
1.18 V @ 150 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
25 µA @ 100 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-65°C ~ 175°C