Pagina 292 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  292/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot SS10PH9HM3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 10A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 90V
  • Capacitance @ Vr, F: 270pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-277, 3-PowerDFN
Voorraad123.600
90V
10A
880mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 90V
270pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
CDLL486B
Microsemi Corporation

DIODE GEN PURP 250V 200MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 250V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-213AA
Voorraad3.392
250V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
100µA @ 250V
-
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
SR1504 R0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 15A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: R6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -50°C ~ 150°C
package: R6, Axial
Voorraad2.000
40V
15A
550mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
R6, Axial
R-6
-50°C ~ 150°C
LSM140JE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 40V 1A DO214BA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214BA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AA, SMB
Voorraad4.960
40V
1A
580mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214BA
-55°C ~ 150°C
EL 1V0
Sanken

DIODE GEN PURP 400V 1.5A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
package: Axial
Voorraad3.024
400V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Through Hole
Axial
-
-40°C ~ 150°C
EG01
Sanken

DIODE GEN PURP 400V 700MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 700mA
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 700mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 50µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
package: Axial
Voorraad3.616
400V
700mA
2V @ 700mA
Fast Recovery =< 500ns, > 200mA (Io)
100ns
50µA @ 400V
-
Through Hole
Axial
-
-40°C ~ 150°C
AU1PKHM3/84A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1A DO220AA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 1µA @ 800V
  • Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-220AA
Voorraad7.072
800V
1A
1.85V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 800V
7.5pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
CFRM107-HF
Comchip Technology

DIODE GEN PURP 1KV 1A MINISMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123T
  • Supplier Device Package: Mini SMA/SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
package: SOD-123T
Voorraad3.696
1000V
1A (DC)
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
15pF @ 4V, 1MHz
Surface Mount
SOD-123T
Mini SMA/SOD-123
-55°C ~ 150°C
hot BYM10-800-E3/97
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-213AB, MELF (Glass)
Voorraad78.000
800V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
BAS21WQ-7-F
Diodes Incorporated

DIODE GEN PURP 200V 200MA SOT323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 200V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -65°C ~ 150°C
package: SC-70, SOT-323
Voorraad7.984
200V
200mA
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-65°C ~ 150°C
RS2BA R3G
TSC America Inc.

DIODE, FAST, 1.5A, 100V, 150NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad7.456
100V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
VS-6ESH01HM3/86A
Vishay Semiconductor Diodes Division

DIODE 100V 6A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 940mV @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 22ns
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -60°C ~ 175°C
package: TO-277, 3-PowerDFN
Voorraad4.512
100V
6A
940mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
22ns
2µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-60°C ~ 175°C
UES1103
Microsemi Corporation

DIODE GEN PURP 150V 2.5A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 2µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: 175°C (Max)
package: A, Axial
Voorraad5.184
150V
2.5A
975mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
2µA @ 150V
-
Through Hole
A, Axial
-
175°C (Max)
VS-HFA15TB60-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-220-2
Voorraad21.804
600V
15A
1.7V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
hot SCS106AGC
Rohm Semiconductor

DIODE SCHOTTKY 600V 6A TO220AC

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 120µA @ 600V
  • Capacitance @ Vr, F: 260pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
package: TO-220-2
Voorraad2.000
600V
6A
1.5V @ 6A
No Recovery Time > 500mA (Io)
0ns
120µA @ 600V
260pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C (Max)
VS-6EWH06FNTR-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 6A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 27ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad16.824
600V
6A
2.1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
27ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
hot NRVA4007T3G
ON Semiconductor

DIODE GEN PURP 1KV 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AC, SMA
Voorraad366.000
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
-
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
6A4-T
Diodes Incorporated

DIODE GEN PURP 400V 6A R6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: R6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -65°C ~ 175°C
package: R6, Axial
Voorraad216.396
400V
6A
900mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through Hole
R6, Axial
R-6
-65°C ~ 175°C
hot DL4004-13-F
Diodes Incorporated

DIODE GEN PURP 400V 1A MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-213AB, MELF
Voorraad711.336
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-55°C ~ 150°C
NTE6164
NTE Electronics, Inc

DIODE GEN PURP 1.6KV 150A DO8

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-8, Stud
  • Supplier Device Package: DO-8
  • Operating Temperature - Junction: -65°C ~ 190°C
package: -
Request a Quote
1600 V
150A
1.1 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
5 mA @ 1600 V
-
Stud Mount
DO-203AA, DO-8, Stud
DO-8
-65°C ~ 190°C
R2000F
SMC Diode Solutions

DIODE GEN PURP 2KV 200MA DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 4 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad652.380
2000 V
200mA
4 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
500 ns
5 µA @ 2000 V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
VS-MBRB1035TRLHM3
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 35V 10A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 35 V
  • Capacitance @ Vr, F: 600pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
35 V
10A
840 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 35 V
600pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
1N3295R
Microchip Technology

STANDARD RECTIFIER

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
1000 V
100A
1.55 V @ 310 A
Standard Recovery >500ns, > 200mA (Io)
-
10 mA @ 1000 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
SS320-V7G
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
200 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 200 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
UGF10J
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 10A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad3.000
600 V
10A
2 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
5 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
PCDP15120G1_T0_00001
Panjit International Inc.

DIODE SIL CARB 1.2KV 15A TO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 140 µA @ 1200 V
  • Capacitance @ Vr, F: 815pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad6.000
1200 V
15A
1.7 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
140 µA @ 1200 V
815pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
S20120
Microchip Technology

DIODE GEN PURP 1.2KV 16A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
1200 V
16A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1200 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 200°C
JAN1N3911AR
Microchip Technology

DIODE GEN PURP 200V 50A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
200 V
50A
1.4 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-65°C ~ 150°C