Pagina 284 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  284/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GP10-4006-M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad2.720
-
-
-
-
-
-
-
-
-
-
-
JANTX1N6642UBCA
Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-UB (3.09x2.45)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: 3-SMD, No Lead
Voorraad7.280
75V
300mA (DC)
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
-
Surface Mount
3-SMD, No Lead
3-UB (3.09x2.45)
-65°C ~ 175°C
1N4246GP-M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 160°C
package: DO-204AL, DO-41, Axial
Voorraad7.728
400V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 400V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 160°C
VS-8EWF04STRLPBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad6.688
-
8A
1.2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
-
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
EGP30C-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-201AA, DO-27, Axial
Voorraad7.968
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
1N8031-GA
GeneSiC Semiconductor

DIODE SCHOTTKY 650V 1A TO276

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 5µA @ 650V
  • Capacitance @ Vr, F: 76pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-276AA
  • Supplier Device Package: TO-276
  • Operating Temperature - Junction: -55°C ~ 250°C
package: TO-276AA
Voorraad3.216
650V
1A
1.5V @ 1A
No Recovery Time > 500mA (Io)
0ns
5µA @ 650V
76pF @ 1V, 1MHz
Through Hole
TO-276AA
TO-276
-55°C ~ 250°C
A170RM
Powerex Inc.

DIODE GEN PURP 600V 100A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 200°C
package: DO-205AA, DO-8, Stud
Voorraad5.952
600V
100A
1.3V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
20mA @ 600V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 200°C
JAN1N6639US
Microsemi Corporation

DIODE GEN PURP 75V 300MA B-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 75V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 175°C
package: SQ-MELF, B
Voorraad4.448
75V
300mA
1.2V @ 300mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 75V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
FR6G02
GeneSiC Semiconductor

DIODE GEN PURP 400V 6A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-203AA, DO-4, Stud
Voorraad3.584
400V
6A
1.4V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
RGP30K-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-201AD, Axial
Voorraad4.400
800V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
hot SB560A-E3/54
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-201AD, Axial
Voorraad7.808
60V
5A
700mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
SS25-M3/5BT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 2A 50V DO-214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-214AA, SMB
Voorraad7.200
50V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 150°C
S1AL RHG
TSC America Inc.

DIODE, 1A, 50V, SUB SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-219AB
Voorraad4.800
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
1N4007G R1G
TSC America Inc.

DIODE, 1A, 1000V, DO-204AL (DO-4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-204AL, DO-41, Axial
Voorraad3.440
-
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
hot 1N3891
GeneSiC Semiconductor

DIODE GEN PURP 200V 12A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-203AA, DO-4, Stud
Voorraad6.336
200V
12A
1.4V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
VS-400UR160D
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 400A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 400A
  • Voltage - Forward (Vf) (Max) @ If: 1.62V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -40°C ~ 200°C
package: DO-205AB, DO-9, Stud
Voorraad4.832
1600V
400A
1.62V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 1600V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-40°C ~ 200°C
S8A
S8A
Diotec Semiconductor

IC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -50°C ~ 150°C
package: -
Request a Quote
50 V
8A
980 mV @ 8 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
10 µA @ 50 V
-
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-50°C ~ 150°C
VSSAF5103HM3-H
Vishay

5A, 100V, SLIM SMA TRENCH SKY RE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2.2A
  • Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 210 µA @ 100 V
  • Capacitance @ Vr, F: 550pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SlimSMA)
  • Operating Temperature - Junction: -40°C ~ 150°C
package: -
Request a Quote
100 V
2.2A
710 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
210 µA @ 100 V
550pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SlimSMA)
-40°C ~ 150°C
GPA807DT-TP
Micro Commercial Co

DIODE GEN PURP 1KV 8A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
1000 V
8A
1.1 V @ 8 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1000 V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 150°C
SS18W_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 80V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 80 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad3.600
80 V
1A
850 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 80 V
-
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
60HFR05
Solid State Inc.

DIODE GEN PURP 50V 60A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -
package: -
Request a Quote
50 V
60A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-
BAS16W-QF
Nexperia USA Inc.

BAS16W-Q/SOT323/SC-70

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 175mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: 150°C
package: -
Request a Quote
100 V
175mA
1.25 V @ 150 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
500 nA @ 80 V
1.5pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
150°C
CPW2-1200-S010B-FR1
Wolfspeed, Inc.

DIODE SCHOTTKY 1200V 10A

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SBT5100LSS_AY_00001
Panjit International Inc.

DIODE SCHOTTKY 100V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
100 V
5A
700 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 100 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
S1KFSH
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad84.000
800 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 800 V
9pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
S3AFG-M3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 3A DO221AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.7 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 28pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SlimSMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad41.397
400 V
3A
1.1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
2.7 µs
10 µA @ 400 V
28pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SlimSMA)
-55°C ~ 175°C
MBR5U100HHE3-TP
Micro Commercial Co

DIODE SCHOTTKY 100V 5A TO277

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 320pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad23.865
100 V
5A
800 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 100 V
320pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277
-55°C ~ 175°C
AL1J
Diotec Semiconductor

DIODE MINIMELF 600V 1A 175C

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 3 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA, MINI-MELF
  • Operating Temperature - Junction: -50°C ~ 175°C
package: -
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600 V
1A
1.3 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
3 µA @ 600 V
-
Surface Mount
DO-213AA
DO-213AA, MINI-MELF
-50°C ~ 175°C