Pagina 229 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  229/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JANTXV1N4148UB2
Microsemi Corporation

DIODE GEN PURP 75V 200MA SMD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
  • Operating Temperature - Junction: -65°C ~ 200°C
package: 3-SMD, No Lead
Voorraad7.904
75V
200mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
4pF @ 0V, 1MHz
Surface Mount
3-SMD, No Lead
UB
-65°C ~ 200°C
GP10KEHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad5.296
800V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 800V
7pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
1N3270R
Powerex Inc.

DIODE GEN PURP 700V 160A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 700V
  • Current - Average Rectified (Io): 160A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12mA @ 700V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-205AB, DO-9, Stud
Voorraad4.800
700V
160A
-
Standard Recovery >500ns, > 200mA (Io)
-
12mA @ 700V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 175°C
MBRH200100R
GeneSiC Semiconductor

DIODE MODULE 100V 200A D-67

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
package: D-67
Voorraad2.464
100V
200A
840mV @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 20V
-
Chassis Mount
D-67
D-67
-
VS-MBRB1635TRL-M3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 16A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 35V
  • Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -65°C ~ 150°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad4.224
35V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 35V
1400pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-65°C ~ 150°C
SR1502HB0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 15A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: R6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -50°C ~ 150°C
package: R6, Axial
Voorraad4.080
20V
15A
550mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
R6, Axial
R-6
-50°C ~ 150°C
AS4PJHM3_A/H
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-277, 3-PowerDFN
Voorraad2.736
600V
2.4A
1.1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
1.8µs
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
31GF6-M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -40°C ~ 150°C
package: DO-201AD, Axial
Voorraad2.048
600V
3A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
20µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-40°C ~ 150°C
UH2BHE3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-214AA, SMB
Voorraad5.664
100V
2A
1.05V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
2µA @ 100V
42pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
ACGRAT104L-HF
Comchip Technology

DIODE GEN PURP 800V 1A 2010

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 2010
  • Operating Temperature - Junction: -65°C ~ 175°C
package: 2-SMD, No Lead
Voorraad5.056
800V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 800V
8pF @ 4V, 1MHz
Surface Mount
2-SMD, No Lead
2010
-65°C ~ 175°C
D7G-T
Diodes Incorporated

DIODE GEN PURP 1KV 1A T1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T1, Axial
  • Supplier Device Package: T-1
  • Operating Temperature - Junction: -65°C ~ 150°C
package: T1, Axial
Voorraad5.584
1000V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 1000V
8pF @ 4V, 1MHz
Through Hole
T1, Axial
T-1
-65°C ~ 150°C
SF36G A0G
TSC America Inc.

DIODE, SUPER FAST, 3A, 400V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-201AD, Axial
Voorraad3.344
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
hot FES16DT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 16A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
package: TO-220-2
Voorraad7.440
200V
16A
975mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
1PS76SB40,135
Nexperia USA Inc.

DIODE SCHOTTKY 40V 120MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 40V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 150°C (Max)
package: SC-76, SOD-323
Voorraad4.720
40V
120mA (DC)
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
-
10µA @ 40V
5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C (Max)
STPS2150
STMicroelectronics

DIODE SCHOTTKY 150V 2A DO15

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 820mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: 175°C (Max)
package: DO-204AC, DO-15, Axial
Voorraad129.222
150V
2A
820mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5µA @ 150V
-
Through Hole
DO-204AC, DO-15, Axial
DO-15
175°C (Max)
hot DSEI12-12A
IXYS

DIODE GEN PURP 1.2KV 11A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 11A
  • Voltage - Forward (Vf) (Max) @ If: 2.6V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 150°C
package: TO-220-2
Voorraad33.984
1200V
11A
2.6V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
250µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
SK36SMB-AQ
Diotec Semiconductor

IC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -50°C ~ 150°C
package: -
Request a Quote
60 V
3A
700 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-50°C ~ 150°C
MBR850_T0_00001
Panjit International Inc.

DIODE SCHOTTKY 50V 8A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
50 V
8A
750 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 50 V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
JAN1N4245-TR
Microchip Technology

DIODE GEN PURP 200V 1A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
200 V
1A
1.3 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
5 µs
1 µA @ 200 V
-
Through Hole
A, Axial
A, Axial
-65°C ~ 175°C
FR152GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1.5A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
100 V
1.5A
1.3 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 100 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
BAS40WX-TP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 30 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Request a Quote
40 V
200mA
1 V @ 40 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
200 nA @ 30 V
5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 125°C
SD2010S100S2R0
KYOCERA AVX

SCHOTTKY DIODES

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3216 Metric)
  • Supplier Device Package: 1206
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Request a Quote
100 V
2A
850 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 100 V
-
Surface Mount
1206 (3216 Metric)
1206
-55°C ~ 125°C
FES1DE-7
Diodes Incorporated

DIODE GP 200V 1A DO219AA T&R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AA
  • Supplier Device Package: DO-219AA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad18.000
200 V
1A
920 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
5 µA @ 200 V
20pF @ 4V, 1MHz
Surface Mount
DO-219AA
DO-219AA
-55°C ~ 150°C
TRS12E65H-S1Q
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 12A TO-220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 120 µA @ 650 V
  • Capacitance @ Vr, F: 778pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C
package: -
Voorraad1.134
650 V
12A
1.35 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
120 µA @ 650 V
778pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2L
175°C
SDURD830
SMC Diode Solutions

DIODE GEN PURP 300V 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 300 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad73.785
300 V
8A
1.3 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
10 µA @ 300 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-55°C ~ 150°C
HS1KLWH
Taiwan Semiconductor Corporation

75NS, 1A, 800V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad20.970
800 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
1 µA @ 800 V
7pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 175°C
RB751S-40SPTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
V1F22-M3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 1A DO219AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35 µA @ 200 V
  • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -40°C ~ 175°C
package: -
Request a Quote
200 V
1A
880 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
35 µA @ 200 V
75pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-40°C ~ 175°C