Pagina 1830 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
FFPF05U120STTU
Fairchild/ON Semiconductor

DIODE GEN PURP 1.2KV 5A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 3.5V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -65°C ~ 150°C
package: TO-220-2 Full Pack
Voorraad3.632
1200V
5A
3.5V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
5µA @ 1200V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-65°C ~ 150°C
1N3275
Powerex Inc.

DIODE GEN PURP 1.4KV 160A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 160A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-205AB, DO-9, Stud
Voorraad6.272
1400V
160A
-
Standard Recovery >500ns, > 200mA (Io)
-
12mA @ 1400V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 175°C
NTS12100EMFST1G
ON Semiconductor

DIODE SCHOTTKY 100V 12A 5DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 730mV @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 55µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN, 5 Leads
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: 8-PowerTDFN, 5 Leads
Voorraad2.768
100V
12A
730mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
55µA @ 100V
-
Surface Mount
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
-55°C ~ 150°C
RS2B-M3/5BT
Vishay Semiconductor Diodes Division

DIODE SW 1.5A 100V 150NS DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AA, SMB
Voorraad7.520
100V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
CD214B-R21000
Bourns Inc.

DIODE GEN PURP 1KV 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-214AA, SMB
Voorraad3.264
1000V
2A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 1000V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-65°C ~ 175°C
FR2JTA
SMC Diode Solutions

DIODE GEN PURP 600V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -50°C ~ 150°C
package: DO-214AA, SMB
Voorraad7.168
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-50°C ~ 150°C
VS-150EBU04
Vishay Semiconductor Diodes Division

DIODE GEN 400V 150A POWIRTAB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 93ns
  • Current - Reverse Leakage @ Vr: 50µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: PowerTab?, PowIRtab?
  • Supplier Device Package: PowIRtab?
  • Operating Temperature - Junction: -55°C ~ 175°C
package: PowerTab?, PowIRtab?
Voorraad2.528
400V
150A
1.3V @ 150A
Fast Recovery =< 500ns, > 200mA (Io)
93ns
50µA @ 400V
-
Through Hole
PowerTab?, PowIRtab?
PowIRtab?
-55°C ~ 175°C
MBRF1045-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
package: TO-220-2 Full Pack, Isolated Tab
Voorraad7.428
45V
10A
570mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-65°C ~ 150°C
hot B3100-13
Diodes Incorporated

DIODE SCHOTTKY 100V 3A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 125°C
package: DO-214AB, SMC
Voorraad258.144
100V
3A
790mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
100pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 125°C
123SPC100A
SMC Diode Solutions

DIODE SCHOTTKY 100V 120A SPD-3A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 870mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 100V
  • Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SPD-3A
  • Supplier Device Package: SPD-3A
  • Operating Temperature - Junction: -55°C ~ 175°C
package: SPD-3A
Voorraad7.056
100V
120A
870mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 100V
3000pF @ 5V, 1MHz
Surface Mount
SPD-3A
SPD-3A
-55°C ~ 175°C
RS3J-E3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AB, SMC
Voorraad3.680
600V
3A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
10µA @ 600V
34pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
hot STPS140Z
STMicroelectronics

DIODE SCHOTTKY 40V 1A SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: 150°C (Max)
package: SOD-123
Voorraad597.360
40V
1A (DC)
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
40µA @ 400V
-
Surface Mount
SOD-123
SOD-123
150°C (Max)
JANTXV1N6769
Microchip Technology

DIODE GEN PURP 100V 8A TO257

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.06 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 80 V
  • Capacitance @ Vr, F: 150pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-257-3
  • Supplier Device Package: TO-257
  • Operating Temperature - Junction: -
package: -
Request a Quote
100 V
8A
1.06 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 80 V
150pF @ 5V, 1MHz
Through Hole
TO-257-3
TO-257
-
JAN1N5712UB-TR
Microchip Technology

SMALL-SIGNAL SCHOTTKY

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 16 V
  • Current - Average Rectified (Io): 75mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 nA @ 16 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
16 V
75mA
1 V @ 35 mA
Small Signal =< 200mA (Io), Any Speed
-
150 nA @ 16 V
2pF @ 0V, 1MHz
Surface Mount
3-SMD, No Lead
UB
-65°C ~ 150°C
JANTXV1N914UR-TR
Microchip Technology

SIGNAL OR COMPUTER DIODE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 75 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
75 V
200mA
1.2 V @ 50 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
500 nA @ 75 V
4pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
VS-8ETU12HN3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 144 ns
  • Current - Reverse Leakage @ Vr: 55 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Request a Quote
1200 V
8A
2.55 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
144 ns
55 µA @ 1200 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
B0540WF
Taiwan Semiconductor Corporation

SOD-123F, 40V, 0.5A, SCHOTTKY DI

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
40 V
500mA
510 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 40 V
-
Surface Mount
SOD-123F
SOD-123F
-65°C ~ 150°C
VS-E5TH3012-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 58 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad27.261
1200 V
30A
2.5 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
58 ns
50 µA @ 1200 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
S2040
Microchip Technology

DIODE GEN PURP 400V 16A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
400 V
16A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 400 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 200°C
BAL99-TP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 715 mV @ 1 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 6 ns
  • Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
70 V
100mA
715 mV @ 1 mA
Small Signal =< 200mA (Io), Any Speed
6 ns
2.5 µA @ 70 V
1.5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 150°C
JAN1N6678T1
Microchip Technology

RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SK52B
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 5A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
20 V
5A
550 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 20 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES1DWG_R1_00001
Panjit International Inc.

DIODE GEN PURP 200V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad4.047
200 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 200 V
-
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
FFSB1065B
onsemi

DIODE SIL CARB 650V 27A D2PAK-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 27A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Capacitance @ Vr, F: 421pF @ 1V, 100kHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad2.181
650 V
27A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 650 V
421pF @ 1V, 100kHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
RB511SM-30T2R
Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA EMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 7 µA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: EMD2
  • Operating Temperature - Junction: 125°C (Max)
package: -
Voorraad138.195
30 V
100mA
370 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
7 µA @ 10 V
-
Surface Mount
SC-79, SOD-523
EMD2
125°C (Max)
CDLL5822-TR
Microchip Technology

SMALL-SIGNAL SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SD125SC150A-T2
SMC Diode Solutions

DIODE SCHOTTKY 150V 15A DIE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 150 V
  • Capacitance @ Vr, F: 500pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 200°C
package: -
Request a Quote
150 V
15A
890 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 150 V
500pF @ 5V, 1MHz
Surface Mount
Die
Die
-55°C ~ 200°C
RB560VM-40FHTE-17
Rohm Semiconductor

DIODE SCHOTTKY 40V 500MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 150°C (Max)
package: -
Voorraad22.230
40 V
500mA
640 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
40 µA @ 40 V
-
Surface Mount
SC-90, SOD-323F
UMD2
150°C (Max)