Pagina 1698 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  1.698/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot RB441Q-40T-72
Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA DO34

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Capacitance @ Vr, F: 6pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AG, DO-34, Axial
  • Supplier Device Package: MSD
  • Operating Temperature - Junction: 125°C (Max)
package: DO-204AG, DO-34, Axial
Voorraad540.000
40V
100mA
550mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
100µA @ 40V
6pF @ 10V, 1MHz
Through Hole
DO-204AG, DO-34, Axial
MSD
125°C (Max)
DL4151-TP
Micro Commercial Co

DIODE GEN 75V 150MA MINI MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 2ns
  • Current - Reverse Leakage @ Vr: 50nA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
  • Operating Temperature - Junction: 175°C (Max)
package: DO-213AC, MINI-MELF, SOD-80
Voorraad6.016
75V
150mA
1V @ 50mA
Small Signal =< 200mA (Io), Any Speed
2ns
50nA @ 50V
-
Surface Mount
DO-213AC, MINI-MELF, SOD-80
Mini MELF
175°C (Max)
RS1GB-13
Diodes Incorporated

DIODE GEN PURP 400V 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-214AA, SMB
Voorraad4.736
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
15pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
MBRS1660 MNG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad7.520
60V
16A
750mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
RU 3AV1
Sanken

DIODE GEN PURP 600V 1.5A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
package: Axial
Voorraad5.600
600V
1.5A
1.5V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
10µA @ 600V
-
Through Hole
Axial
-
-40°C ~ 150°C
EGF1CHE3/67A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO214BA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214BA
  • Supplier Device Package: DO-214BA (GF1)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-214BA
Voorraad3.264
150V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
15pF @ 4V, 1MHz
Surface Mount
DO-214BA
DO-214BA (GF1)
-65°C ~ 175°C
ESH2C-E3/5BT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-214AA, SMB
Voorraad7.888
150V
2A
930mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
BYM10-800HE3/97
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-213AB, MELF (Glass)
Voorraad7.552
800V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
SE30PAG-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO-221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-221BC, SMA Flat Leads Exposed Pad
Voorraad3.248
400V
3A
1.16V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.3µs
5µA @ 400V
13pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
BA158GPE-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad6.656
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
BAT43W-G3-18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Capacitance @ Vr, F: 7pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: 125°C (Max)
package: SOD-123
Voorraad7.792
30V
200mA (DC)
450mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Surface Mount
SOD-123
SOD-123
125°C (Max)
SD103CWS-E3-18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 350MA 20V SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 350mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 5µA @ 10V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 125°C
package: SC-76, SOD-323
Voorraad7.232
20V
350mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
5µA @ 10V
50pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 125°C
hot RFUS20TM4S
Rohm Semiconductor

DIODE GEN PURP 430V 20A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 430V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 430V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C (Max)
package: TO-220-3 Full Pack
Voorraad9.480
430V
20A
1.6V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 430V
-
Through Hole
TO-220-3 Full Pack
TO-220NFM
150°C (Max)
PMEG3005ESFYL
Nexperia USA Inc.

DIODE SCHOTTKY 30V 0.5A SOD962

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.42ns
  • Current - Reverse Leakage @ Vr: 9µA @ 30V
  • Capacitance @ Vr, F: 21pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: DSN0603-2
  • Operating Temperature - Junction: 150°C (Max)
package: 0201 (0603 Metric)
Voorraad164.922
30V
500mA
720mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
1.42ns
9µA @ 30V
21pF @ 1V, 1MHz
Surface Mount
0201 (0603 Metric)
DSN0603-2
150°C (Max)
1N4148W-HE3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
package: SOD-123
Voorraad57.672
75V
150mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
100µA @ 100V
-
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C
GC50MPS06-247
GeneSiC Semiconductor

DIODE SIL CARB 650V 50A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: 175°C (Max)
package: -
Voorraad1.887
650 V
50A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
Through Hole
TO-247-2
TO-247-2
175°C (Max)
SICF0860P-BP
Micro Commercial Co

DIODE SIL CARB 650V 8A ITO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 36 µA @ 650 V
  • Capacitance @ Vr, F: 30pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad15.000
650 V
8A
1.6 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
36 µA @ 650 V
30pF @ 400V, 1MHz
Through Hole
TO-220-2 Isolated Tab
ITO-220AC
-55°C ~ 175°C
VS-E5TH1512-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad20.139
1200 V
15A
2.5 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
95 ns
50 µA @ 1200 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
RS3AH
Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
50 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
10 µA @ 50 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
CMOSH2-4L-TR-PBFREE
Central Semiconductor Corp

DIODE SCHOTTKY 40V 200MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Voorraad255.054
40 V
200mA
500 mV @ 200 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
50 µA @ 20 V
-
Surface Mount
SC-79, SOD-523
SOD-523
-65°C ~ 150°C
R50460
Microchip Technology

DIODE GP REV 600V 300A DO205AB

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB (DO-9)
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
600 V
300A
1.25 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
75 µA @ 600 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-205AB (DO-9)
-65°C ~ 200°C
SF15GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad14.985
300 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 300 V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
ES8JC-HF
Comchip Technology

DIODE GEN PURP 600V 8A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 90pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
600 V
8A
1.7 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 600 V
90pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SRAS20150H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 20A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
150 V
20A
1.02 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 150 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
HSU227JTRF-E
Renesas Electronics Corporation

SCHOTTKY BARRIER DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
406DMQ200
SMC Diode Solutions

DIODE SCHOTTKY 200V 200A PRM4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 990 mV @ 200 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 200 V
  • Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: PRM4
  • Supplier Device Package: PRM4 (Isolated)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad354
200 V
200A
990 mV @ 200 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 mA @ 200 V
3000pF @ 5V, 1MHz
Chassis Mount
PRM4
PRM4 (Isolated)
-55°C ~ 175°C
HER202-AP
Micro Commercial Co

DIODE GEN PURP 100V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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100 V
2A
1 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 100 V
50pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
V12PM10HM3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 12A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
package: -
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100 V
12A
750 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C